嵌入GaAs中的应变MnAs纳米晶体中增强的电子关联、局域矩和居里温度
Enhanced electron correlations, local moments, and Curie temperature in strained MnAs nanocrystals embedded in GaAs
摘要：
用Mn 2 p芯能级光电子能谱研究了GaAs（001）上六方MnAs外延连续膜和GaAs中MnAs纳米晶的电子结构。基于团簇模型的扩散-相互作用分析表明，嵌入式MnAs纳米晶体的基态主要由最大化局部Mn矩的d5配置。纳米尺度和应变显着改变MnAs的性能。在纳米晶体的内部应变的结果在减少的p-d杂化和增强的Mn-As键合相互作用的离子特性。纳米晶体中的空间限制和减少的p-d杂化导致增强的d-电子局域化，触发d-d电子相关性并增强局部Mn矩。MnAs的电子结构的这些变化对纳米晶体的居里温度具有有利的影响，其被测量为显著高于块状MnAs的居里温度。
英文摘要：
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a cluster model show that the ground state of the embedded MnAs nanocrystals is dominated by a d5 configuration that maximizes the local Mn moment. Nanoscaling and strain significantly alter the properties of MnAs. Internal strain in the nanocrystals results in reduced p-d hybridization and enhanced ionic character of the Mn-As bonding interactions. The spatial confinement and reduced p-d hybridization in the nanocrystals lead to enhanced d-electron localization, triggering d-d electron correlations and enhancing local Mn moments. These changes in the electronic structure of MnAs have an advantageous effect on the Curie temperature of the nanocrystals, which is measured to be remarkably higher than that of bulk MnAs.
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