We study gate field effects on the Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ | graphene | GaAs heterostructure via first-principles calculations. We find that under moderate doping levels electrons can be added to but not taken from the single-molecule magnet Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ (Mn$_{12}$). The magnetic anisotropy energy (MAE) of Mn$_{12}$ decreases as the electron doping level increases, due to electron transfer from graphene to Mn$_{12}$ and change in the band alignment between Mn$_{12}$ and graphene. At an electron doping level of $-5.00 \times 10^{13}\, \textrm{cm}^{-2}$, the MAE decreases by about 18% compared with zero doping. The band alignment between graphene and GaAs is more sensitive to electron doping than to hole doping since the valence band of GaAs is close to the Fermi level. The GaAs substrate induces a small bandgap in the supported graphene under the zero gate field and a nearly strain-free configuration. Finally, we propose a vertical tunnel junction for probing the gate dependence of MAE via electron transport measurements.
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at a Fe/GaAs interface and relevant for spin injection experiments.
We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization and crystal structure provides a powerful means of characterizing individ…
We report significant deviations from the usual quadratic dependence of the ground state interband transition energy on applied electric fields in InAs/GaAs self-assembled quantum dots. In particular, we show that conventional second-order perturbation theory fails to correctly describe the Stark shift for electric field below $F = 10$ kV/cm in high dots. Eight-band ${\bf k}\cdot{\bf p}$ calculations demonstrate this effect is predominantly due to the three-dimensional strain field distribution which for various dot shapes and stoichiometric compositions drastically affects the hole ground sta…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.
We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field.…
We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct negative magnetoresistance (MR) at low and a positive MR at higher temperatures. We show that the negative MR contribution is only observed for the ferromagnetic iron contacts but is absent if iron is replaced by copper or gold electrodes. Possible explanations of the negative MR involve suppression of spin-flip scattering or Zeeman splitting of the tunneling bar…
The microscopic structure of spin-orbit fields for the technologically important Fe/GaAs interface is uncovered from first principles. A symmetry based method allows to obtain the spin-orbit fields---both their magnitude and orientation---for a generic Bloch state, from the electronic band structure for any in-plane magnetization orientation. It is demonstrated that the spin-orbit fields depend not only on the electric field across the interface, but also surprisingly strongly on the Fe magnetization orientation, opening prospects for their magnetic control. These results give important clues …
Precise absolute far-infra-red magneto-transmission experiments have been performed in magnetic fields up to 33 T on a series of single GaAs quantum wells doped at different levels. The transmission spectra have been simulated with a multilayer dielectric model. The imaginary part of the optical response function which reveals new singular features related to the electron-phonon interactions has been extracted. In addition to the expected polaronic effects due to the longitudinal optical (LO) phonon of GaAs, a new kind of carrier concentration dependent interaction with interface phonons is ob…
Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn is determined by the impurity band rather than holes in the valence band. We discuss here the physical mechanism of FM mediated by the carriers in impurity band, where the Mn d-level play a crucial role. The theory is based on the first principle approach.
The magnetophotoluminescence (MPL) behavior of a GaAs/Al(0.3)Ga(0.7)As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the nu=1 quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the nu=1/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these f…
The giant transverse magnetoresistance is observed in the case of photoinduced nonequilibrium carriers in an asymmetric undoped system of three GaAs/AlGaAs quantum wells at room temperature. In a magnetic field of 75 kOe, the resistance of nanostructure being studied increases by a factor of 1.85. The magnetoresistance depends quadratically on the magnetic field in low fields and tends to saturation in high fields. This phenomenon is attributed to the rearrangement of the electron wave function in magnetic field. Using the fact that the incoherent part of the scattering probability for electro…
We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported by theoretical calculations based on a tightbinding model of Mn acceptors in GaAs. For Mn acceptors on the (110) surface and the subsurfaces immediately underne…
We find that photoexcited electrons in an n-GaAs epilayer rapidly (< 50 ps) spin-polarize due to the proximity of an epitaxial ferromagnetic metal. Comparison between MnAs/GaAs and Fe/GaAs structures reveals that this coherent spin polarization is aligned antiparallel and parallel to their magnetizations, respectively. In addition, the GaAs nuclear spins are dynamically polarized with a sign determined by the spontaneous electron spin orientation. In Fe/GaAs, competition between nuclear hyperfine and applied magnetic fields results in complete quenching of electron spin precession.
We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford backscattering. The magnetic properties of the films have been measured using superconducting quantum interference device. The magnetization of the films was found to decrease with increasing film thickness. The slight degradation of magnetic properties is attributed to increasing roughness on the Co surface or the Co/GaAs interface during the Co deposition.
The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well states forming in the Fe3O4 film. Quantum confinement of the t2g states near the Fermi level provides an explanation for the similar thickness dependences of the FPP and MOKE oscillations.
It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the Schottky barrier decreasing as metal work-function increasing. Our work shows that the graphene interlayer …
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the anisotropy of the films. The results, based on the shape of the magnetization loops, suggest a domain movement mechanism for both types of samples. The temperature dependence of the coercivity of the films has been also examined, displaying a generic anomalous reentrant behavior at T$>$200 K. This feature is independent of the substrate orientation and films thick…
Coulomb driven, magneto-optically induced electron and hole bound states from a series of heavily doped GaAs/Al(0.3)Ga(0.7)As single heterojunctions (SHJ) are revealed in high magnetic fields. At low magnetic fields (nu > 2), the photoluminescence spectra display Shubnikov de-Haas type oscillations associated with the empty second subband transition. In the regime of the Landau filling factor nu < 1 and 1 < nu <2, we found strong bound states due to Mott type localizations. Since a SHJ has an open valence band structure, these bound states are a unique property of the dynamic movement of the v…
Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observed pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show …
Exponentially small resistance in crossed static magnetic and microwave fields occurs in ultrapure two dimensional electron gases (2DEG), while in less pure systems the magnetoresistance oscillates but is always positive. A non-perturbative theory of self-organization explains the new collective states in terms of open orbits. There are analogies to many other anomalous physical phenomena, as well as to scaling and evolutionary principles of biophysics.
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in remanence up to 100K. This result is obtained thanks to the combination of a perpendicularly magnetized CoFeB/MgO spin injector allowing efficient spin injection and an appropriate p-doped InGaAs/GaAs QD layer in the active region. By analyzing the bias and temperature dependence of the electroluminescence circular polarization, we have evidenced a two-step spin r…
Motivated by recent STM experiments, we present a theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level obtained by substituting a single Ga atom in the (110) surface layer of GaAs or in one of the atoms layers below the surface. We employ a kinetic-exchange tight-binding model in which the relaxation of the (110) surface is taken into account. The acceptor wave function is strongly anisotropic in space and its detailed features depend on the depth of the sublayer in which the Mn atom is located. The local-density-of-states (LDOS) on the (110) surface ass…
Magnetic-field driven hybridization of heavy- and light-hole Rydberg excitons in GaAs quantum wells
Universidad Autónoma de Madrid（马德里自治大学）；Condensed Matter Physics Center (IFIMAC)（凝聚态物理中心（IFIMAC））；CNR Nanotec, Institute of Nanotechnology（意大利国家研究委员会纳米技术研究所）；School of Physics and Astronomy, Monash University（莫纳什大学物理与天文学院）
Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ and V$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ Films
The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological Band Anticrossing Model (BAC) which we extended in order to include magnetic field and electron - phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron…
The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $δ$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated…
We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is ach…
We report on a heretofore unnoted giant negative magnetocapacitance (>20%) in non-magnetic Au/GaAs:Si Schottky barriers that we attribute to a magnetic field in-duced increase in the binding energy of the shallow donor Si impurity atoms. Depletion capacitance (Cdep) dispersion identifies the impurity ionization and capture processes that give rise to a magnetic field dependent density of ionized impurities. Internal photoemission experiments confirm that the large field-induced shifts in the built-in potential, inferred from 1/Cdep^2 vs voltage measurements, are not due to a field-dependent Sc…
We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional electron gas in GaAs quantum wells, and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors.
In this note, we show that the latest spin grating measurement of spin helix by Koralek {\em et al.} [Nature {\bf 458}, 610 (2009)] provides strong evidence of the infinite spin diffusion length of any spin polarization along the direction perpendicular to the effective magnetic field from the Dresselhaus and Rashba spin-orbit couplings with identical strengths in $(001)$ GaAs quantum wells, predicted by Cheng {\em et al.} [Phys. Rev. B {\bf 75}, 205328 (2007)].
While isovalent doping of GaAs (e.g. by In) leads to a repulsion between the solute atoms, two Cr, Mn, or Fe atoms in GaAs are found to have lower energy than the well-separated pair, and hence attract each other. The strong bonding interaction between levels with t2 symmetry on the transition metal (TM) atoms results in these atoms exhibiting a strong tendency to cluster. Using first-principles calculations, we show that this attraction is maximal for Cr, Mn and Fe while it is minimal for V. The difference is attributed to the symmetry of the highest occupied levels. While the intention is to…
We discuss magnetoexcitons dispersion in single and coupled $GaAs-(Ga,Al)As$ quantum wells using the Bethe-Salpeter (B-S) formalism. The B-S formalism in the case of quantum wells provides an equation for the exciton wave function which depends on two space variables plus the time variable, i.e. the B-S equation is 2+1-dimensional equation. We compare the results for magnetoexcitons dispersion, obtained in the LLL approximations with the results calculated by solving the exact B-S equation. It is shown that the exact B-S equation has an extra term (B-S term) that does not exist in the LLL appr…
Magnetic semiconductors have aroused interest due to their various functionalities related to spintronic devices. Manganese (Mn) as a substitutional impurity in A3B5 semiconductors supplies not only holes, but also localized spins. The ejection of Mn atoms with an uncompensated magnetic moment leads to the appearance of ferromagnetic properties. The most suitable material characterized by long-term spin dynamics is n-type GaAs. In p-type GaAs, the spin relaxation time of electrons is generally much shorter. For purposes of this research, electron-spin relaxation times in 3D and 2D p-type GaAs …
Results of first-principles calculations of the Fe/GaAs/Ag(001) epitaxial tunnel junctions reveal that hybridization of interface resonances formed at both interfaces can enhance the tunnelling anisotropic magnetoresistance (TAMR) of the systems. This mechanism is manifested by a non-monotonic dependence of the TAMR effect on the thickness of the tunnel barrier, with a maximum for intermediate thicknesses. A detailed scan of k-resolved transmissions over the two-dimensional Brillouin zone proves an interplay between a few hybridization-induced hot spots and a contribution to the tunnelling fro…
Density functional calculations with a large unit cell have been conducted to investigate adsorption, segregation and magnetization of Mn monomer on GaAs(110). The Mn adatom is rather mobile along the trench on GaAs(110), with an energy barrier of 0.56 eV. The energy barrier for segregation across the trenches is nevertheless very high, 1.67 eV. The plots of density of states display a wide gap in the majority spin channel, but show plenty of metal-induced gap states in the minority spin channel. The Mn atoms might be invisibl in scanning tunneling microscope (STM) images taken with small bias…
We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of interplay between spin-transport-related contribution and tunneling anisotropic magnetoresistance of magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ohm which is twice the magnitude of the measured non-local signal.
Recently reported optical nuclear orientation in the $n$-doped GaAs microcavity under pumping in nominal transparency region of the crystal [Appl. Phys. Lett. $\mathbf{106}$, 242405 (2015)] has arisen a number of questions, the main of them concerning mechanisms of angular momentum transfer from the light to the nuclear spin system and the nature of the light-related magnetic fields accompanying the optical nuclear polarization. In this paper, we use the spin noise spectroscopy for magnetometric purposes, particularly, to study effective fields acting upon electron spin system of an $n$-GaAs l…
Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm the presence of single phase Fe3O4 in the film. The electrical transport property of the film shows the characteristic Verwey transition at 122 K and below 110 K, the transport follows variable range hopping type conduction mechanism. The film shows room temperature magnetization hysteresis loop suggesting the ferrimagnetic behavior of the film with saturat…
We report on the micro-photoluminescence spectroscopy of InAs/GaAs quantum dots (QD) doped by a single Mn atom in a magnetic field either longitudinal or perpendicular to the optical axis. In both cases the spectral features of positive trion (X+) are found to split into strongly circularly polarized components, an effect very surprising in a perpendicular magnetic field. The field-induced splitting is ascribed to the transverse Zeeman splitting of the neutral acceptor complex A0 issued by the Mn impurity, whereas the circular optical selection rules result from the p-d exchange which acts as …
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin density approximation we calculate spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magn…
The spin dynamics of localized donor-bound electrons interacting with the nuclear spin ensemble in $n$-doped GaAs epilayers is studied using nuclear spin polarization by light with modulated circular polarization. We show that the observed build-up of the nuclear spin polarization is a result of competition between nuclear spin cooling and nuclear spin warm-up in the oscillating Knight field. The developed model allows us to explain the dependence of nuclear spin polarization on the modulation frequency and to estimate the equilibration time of the nuclear spin system that appears to be shorte…
We study the electron spin dynamics in p-type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.
We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order process is suppressed, and the second-order process becomes dominant. We find that the spin-phonon-interaction induced spin relaxation time is 40 - 80 s for electrons, and 1 - 20 ms for holes at 4.2 K. The calculated hole-spin relaxation times are in good agreement with recent experiments, which suggests that the two-phonon process is the main relaxation me…
We present experimental evidence and physics-based simulations of the lock-on effect in high-voltage GaAs avalanche diodes. The avalanche triggering is initiated by steep voltage ramp applied to the diode and in-series 50 Ohm load. After subnanosecond avalanche switching the reversely biased GaAs diode remains in the conducting state for the whole duration of the applied pulse (dozens of nanoseconds). There is no indication of the p-n junction recovery that is commonly expected to develop on the nanosecond scale due to the drift extraction of non-equilibrium carriers. The diode voltage keeps a…
Some of the highest transition temperatures achieved for Mn-doped GaAs have been in delta-doped heterostructures with well-separated planes of Mn. But in the absence of magnetic anisotropy, the Mermin-Wagner theorem implies that a single plane of magnetic ions cannot be ferromagnetic. Using a Heisenberg model, we show that the same mechanism that produces magnetic frustration and suppresses the transition temperature in bulk Mn-doped GaAs, due to the difference between the light and heavy band masses, can stabilize ferromagnetic order for a single layer of Mn in a GaAs quantum well. This comes…
