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arXiv 1208.2811cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el
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The Nature of the magnetism-promoting hole state in the prototype magnetic semiconductor GaAs: Mn

V. Fleurov, K. Kikoin, A. Zunger

英文摘要:

Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn is determined by the impurity band rather than holes in the valence band. We discuss here the physical mechanism of FM mediated by the carriers in impurity band, where the Mn d-level play a crucial role. The theory is based on the first principle approach.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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