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arXiv 1403.0239cond-mat.mes-hall
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石墨烯基纳米孔拓扑绝缘体中的巨thermoelectric effect

Giant thermoelectric effect in graphene-based topological insulators with nanopores

Po-Hao Chang, Mohammad Saeed Bahramy, Naoto Nagaosa, Branislav K. Nikolic

摘要:

设计具有高品质因数$ZT=S^2 G T/κ$的热电材料需要满足三个通常不可调和的条件,即,高电导率$G$、小热导率$κ$和高塞贝克系数$S$。纳米结构化是实现这一目标的有希望的方法之一,因为它可以基本上抑制晶格对$κ$的贡献。然而,它也可能以不可控的方式不利地影响电子传输。在这里,我们从理论上证明,这个问题可以通过制造具有重吸附原子和纳米孔的石墨烯纳米带来理想地解决。这些系统,作为一个二维拓扑绝缘体与强大的螺旋边缘状态携带电流,产生一个高度优化的功率因数$S^2G$每螺旋导电通道。同时,它们的纳米孔阵列阻碍了通过本体的晶格热传导。利用量子输运模拟结合第一性原理电子和声子能带结构计算,发现热电优值在$T \simeq 40$ K时达到最大值$ZT \simeq 3$。这为通过纳米结构化利用电子态的非平凡拓扑结构来设计高$ZT$材料铺平了道路。

英文摘要:

Designing thermoelectric materials with high figure of merit $ZT=S^2 G T/κ$ requires fulfilling three often irreconcilable conditions, i.e., the high electrical conductance $G$, small thermal conductance $κ$ and high Seebeck coefficient $S$. Nanostructuring is one of the promising ways to achieve this goal as it can substantially suppress lattice contribution to $κ$. However, it may also unfavorably influence the electronic transport in an uncontrollable way. Here we theoretically demonstrate that this issue can be ideally solved by fabricating graphene nanoribbons with heavy adatoms and nanopores. These systems, acting as a two-dimensional topological insulator with robust helical edge states carrying electrical current, yield a highly optimized power factor $S^2G$ per helical conducting channel. Concurrently, their array of nanopores impedes the lattice thermal conduction through the bulk. Using quantum transport simulations coupled with first-principles electronic and phononic band structure calculations, the thermoelectric figure of merit is found to reach its maximum $ZT \simeq 3$ at $T \simeq 40$ K. This paves a way to design high-$ZT$ materials by exploiting the nontrivial topology of electronic states through nanostructuring.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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