arXiv 1401.43972014-01-17cond-mat.mtrl-sci

Si和MgO衬底上生长的Co2FeAl Heusler薄膜：退火温度效应

Co2FeAl Heusler thin films grown on Si and MgO substrates: annealing temperature effect

M. Belmeguenai, H. Tuzcuoglu, M. S. Gabor, T. Petrisor, C. Tuisan, F. Zighem, S. M. Chérif, P. Moch

备注：: 8 pages, 7 figures to appear in J. App. Phys
发表信息：: Journal of Applied Physics, 115, 043918 (2014)
DOI：: 10.1063/1.4863398

摘要：

采用磁控溅射法在MgO（001）和Si（001）衬底上制备了10 nm和50 nm $_{2}$-FeAl（CFA）薄膜，并在不同温度下退火。X射线衍射显示，分别在Si和MgO衬底上生长的CFA膜为多晶或外延生长（根据CFA（001）[110]//MgO（001）[100]外延关系）。对于后者，当增加退火温度（Ta）时，化学顺序从A2相变化到B2相，而对于在Si上生长的CFA，仅观察到A2无序类型。微带铁磁共振（MS-FMR）的测量结果表明，在MgO衬底上生长的CFA的单轴和四重对称项的叠加的面内各向异性的结果。这四重各向异性，这完全消失的样品上生长的Si，是符合样品的晶体结构。四重各向异性场随着Ta的增加而减小，而单轴各向异性场在研究范围内几乎不受Ta的影响。MS-FMR数据还允许得出旋磁因子保持恒定并且交换刚度常数随着$T_{a}$而增加的结论。最后，FMR线宽随着Ta的增加而减小，这是由于化学有序性的增强。我们得到了一个非常低的本征阻尼参数（在MgO和Si上生长的50 nm厚的薄膜在615 °C退火时分别为1.3*10^-3和1.1*10^-3）。

英文摘要：

10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to the relation CFA(001)[110]//MgO(001)[100] epitaxial relation), respectively for CFA films grown on a Si and on a MgO substrate. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (Ta) while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing Ta while the uniaxial anisotropy field is nearly unaffected by Ta within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with $T_{a}$. Finally, the FMR linewidth decreases when increasing Ta, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.3*10^-3 and 1.1*10^-3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively).

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