We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable that the anisotropy energy density Ku is 1.3{\times}106 erg/cm3 for the structure with 2 nm Co2FeAl after annealing at 350 oC. The thicknesses of Co2FeAl and MgO layers greatly affect the PMA. Our results provide an effective way to realize relative thick perpendicularly magnetized Heusler alloy films.
Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$, while those with FeAl termination exhibit in-plane magnetic anisotropy. Atomic layer resolved analysis indicates that the origin of perpendicular magnetic anisotropy in Co$_{2}$FeAl$|$MgO interfaces can be attributed to the out-of-plane orbital contributions of interfacial Co atoms. At the same time, Co$_{2}$MnGe and Co$_{2}$MnSi interfaced with MgO tend to …
The authors demonstrated that L21-ordered full-Heusler Co2FeSi (CFS) alloy film with thickness of 100 nm were formed by facing targets sputtering (FTS) method at a substrate temperature TS = 300 deg C. Degrees of L21- and B2- order for the film were 0.37, and 0.96, respectively. Furthermore, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by MgO-interface magnetic anisotropy were successfully formed by the FTS method. The CFS/MgO stacking layers showed PMA when dCFS was 0.6 nm <= dCFS <= 1.0 nm. The PMA in these structures resulted from the CFS/MgO interf…
Interfaces in the MgO-FeCoB-MgO trilayer have been studied with grazing incident nuclear resonance scattering (GINRS) using the x-ray standing waves (XSW) technique. High depth selectivity of the present method allows one to measure magnetism and structure at the two interfaces of FeCoB, namely, FeCoB-on-MgO and MgO-on-FeCoB, independently, yielding an intriguing result that both interfaces are not symmetric. A high-density layer with an increased magnetic hyperfine field at the FeCoB-on-MgO interface suggests different growth mechanisms at the two interfaces. The azimuthal angle-dependent mag…
Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is a key ingredient for the development of electrically controlled spintronic devices. Due to their relatively large spin-polarization, high Curie temperature and low Gilbert damping the Co-based full Heusler alloys are of special importance from a scientific and applications point of view. Here, we study the mechanisms responsible for the PMA in Pt/Co-based full Heusler alloy/MgO thin films structures. We show that the ultrathin Heusler films exhibit strong PMA even in the absence of magnetic annealing. By means of ferro…
We study IrCrMnZ (Z=Al, Ga, Si, Ge) systems using first-principles calculations from the perspective of their application as the electrode materials of MgO-based MTJs. These materials have highly spin-polarized conduction electrons with partially occupied $Δ_1$ band, which is important for coherent tunneling in parallel magnetization configuration. The Curie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) as predicted from mean-field-approximation. The stability of ordered phase against various antisite disorders has been investigated. We discuss here the effect of "spin-orb…
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles calculations (Sakamoto et al., Ref. 9) suggested that the Fermi level is located in two overlapping largely spin-polarized bands formed in the bandgap of GeFe; spin-down d(e) band and spin-up p-d(t2) band. Thus, it is important to clarify how these bands contribute to spin injection and detection. In this study, we show the first successful observation of the tunneling magnetoresistance (TMR) in magnetic tunnel junct…
We report on broadband ferromagnetic resonance linewidth measurements performed on epitaxial Heusler thin films. A large and anisotropic two-magnon scattering linewidth broadening is observed for measurements with the magnetization lying in the film plane, while linewidth measurements with the magnetization saturated perpendicular to the sample plane reveal low Gilbert damping constants of $(1.5\pm0.1)\times 10^{-3}$, $(1.8\pm0.2)\times 10^{-3}$, and $<8\times 10^{-4}$ for Co$_2$MnSi/MgO, Co$_2$MnAl/MgO, and Co$_2$FeAl/MgO, respectively. The in-plane measurements are fit to a model combining G…
Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler Co$_2$MnAl and Fe$_2$MnAl with one to three unit cell periodicity were grown on GaAs (001), MgO (001), and Cr (001)/MgO (001). Electron energy loss spectroscopy maps confirmed clearly segregated epitaxial Heusler layers with high cobalt or high iron concentrations for samples grown near room temperature on GaAs (001). Superlattice structures grown with an exce…
In this study, to obtain perpendicular magnetic tunnel junctions (p-MTJs) using half-metallic ferromagnets (HMFs), several methods were developed to induce perpendicular magnetic anisotropy (PMA) in full-Heusler Co2FeSi (CFS) alloy thin layers in an MTJ multilayer composed of a layered CFS/MgO/CFS structure. Oxygen exposure at 2.0 Pa for 10 min after deposition of the bottom CFS layer was effective for obtaining PMA in the CFS layer. One of the reasons for the PMA is the formation of nearly ideal CFS/MgO interfaces due to oxygen exposure before the deposition of the MgO layer. The annealing pr…
We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe$_{1.5}$CoGe. Thickness series annealed at different temperatures are prepared and the magnetic damping is measured, a lowest value of $α=2.18\times 10^{-3}$ is obtained. The perpendicular magnetic anisotropy properties in Fe$_{1.5}$CoGe/MgO are also characterized. The evolution of the interfacial perpendicular anisotropy constant $K^{\perp}_{\rm S}$ with the annealing temperature is shown and compared with the widely used CoFeB/MgO interface. A large volume contribution to the per…
We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy based magnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface were achieved using a MgO buffer layer. A tunnel magnetoresistance (TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer torque induced magnetization switching was achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. Using a thermal activation model, the in…
Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are expected to play a key role in the next generation of current and electric field switched memory and logic devices. In this study we use Kerr microscopy alongside electrical transport measurement to gain insight into the underlying switching mechanisms of such devices. We find switching to be a stochastic, domain wall driven process, the speed of which is strongly dependent on the switching current. Kerr imaging shows domain nucleation at the edge of the device which modelling reveals is likely assisted by the perpendicular comp…
The present study is dedicated to the influence of different substrate and buffer layer materials on the martensitic transformation in sputter deposited epitaxial shape memory Heusler alloys. For this, the magnetocaloric Heusler alloy Ni-Co-Mn-Al \cite{Teichert2015b} is grown on MgO(001), MgAl$_{2}$O$_{4}$(001), and MgO(001)/V substrates, which exhibit a lattice misfit to the Ni-Co-Mn-Al between $-1.2\%$ and $3.6\%$. By temperature dependent X-ray diffraction measurements it is shown that the optimum buffer layer for shape memory Heusler films is not one with minimum lattice misfit, but one wi…
MgO-barrier magnetic tunnel junctions with half-metallic Heusler alloy electrodes attracted much attentions for spintronics applications. However, a couples of issues related to materials still remain to be resolved for practical uses. Recently, quarterly equiatomic Heusler alloys attracted attentions as advanced Heusler alloys. CoIrMnZ (Z = Al, Si, Ga, and Ge) half-metallic Heusler alloys were designed and predicted to have moderate Curie temperatures and to be a lattice-matched with the MgO barrier, being advantageous to traditional Co2 Heusler alloys [T. Roy et al., J. Magn. Magn. Mater. 49…
Fabrication and characterization of the gapless half-Heusler YPtSb thin films
采用磁控共溅射法在MgO缓冲的SiO2/Si（001）衬底上制备了Half-Heusler YPtSb薄膜。X射线衍射图和能量色散X射线光谱证实了高质量的生长和化学计量。电阻率的温度依赖性表现出一个双稳态型行为下降到低温。在300 K下，霍尔迁移率被确定为450 cm 2/Vs，这远高于体值（300 cm 2/Vs）。沿和垂直于电流方向施加场的面内磁阻（MR）测量显示相反的MR符号，这表明拓扑表面状态的可能存在。
The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling-…
Using first-principles calculations, we studied Mn$_2$RuZ (Z=Al, Ga, Si, Ge) and their heterojunctions with MgO along (001) direction. All these alloys possess Hg$_2$CuTi-type inverse Heusler alloy structure and ferrimagnetic ground state. Our study reveals the half-metallic electronic structure with highly spin-polarized $Δ_1$ band, which is robust against atomic disorder. Next we studied the electronic structure of Mn$_2$RuAl/MgO and Mn$_2$RuGe/MgO heterojunctions. We found that the MnAl- or MnGe-terminated interface is energetically more favorable compared to the MnRu-terminated interface. …
We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistance stacks. The samples were prepared using magnetron co-sputtering. We investigate the structural properties by X-ray diffraction and reflection, as well as atomic force and high-resolution transmission electron microscopy. We find an excellent crystal growth quality with low interface roughnesses of 1-3 Å, whi…
Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO (001) substrate using pulsed laser deposition system, along with the study of structural, magnetic and transport properties. The magnetic property measurements of the thin film suggest a soft ferromagnetic state at room temperature with an in-plane magnetic anisotropy and a Curie temperature…
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called synthetic antiferromagnets (SAF), are usually employed to serve as the pinned layer of spintronic devices based on spin valves and magnetic tunnel junctions to reduce the stray field and/or increase the pinning field. Here we investigate the spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO perpendicularly magnetized multilayer with interlayer antiferrom…
Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures. A2-type Mn$_2$VAl films showed no spontaneous magnetization and L2$_1$-type Mn$_2$VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm$^3$ at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn$_2$VAl film deposited at 400$^\circ$C. A bilayer sample of the ant…
An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs incorporating this structure gave rise to the largest tunnel magnetoresistance for perpendicular MTJs using low damping Heusler alloys. The 4-fold-symmetry hexagonal Ru arises from an epitaxial growth …
Thermal stability and structural ordering of thick Co$_2$MnAl films grown on MgO and Si substrates
Regional Institute for Applied Scientific Research (IRICA) and Department of Physics, University of Castilla-La Mancha（卡斯蒂利亚-拉曼恰大学应用科学研究区域研究所（IRICA）和物理系）；Dept. of Polym. and Adv. Mater., Univ. Basque Country, UPV/EHU（巴斯克大学聚合物与先进材料系）；Department of Applied Physics I, EIG, University of the Basque Country, UPV/EHU（巴斯克大学工程与应用物理一系）；Physics Department, Faculty of Science, Sohag University（苏哈格大学理学院物理系）
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet nanostructures, required for applications in the emergent magnetic technologies like random access memories, high-frequency nano oscillators, or bio-inspired neuromorphic computations. We study the interface properties, magnetization dynamics, magnetostatic features and spin-orbit interactions within the multilayer system Ti(2)/Co(1)/Pt(0-4)/Co(1)/MgO(2)/Ti(2)…
To achieve a large terahertz (THz) amplitude from a spintronic THz emitter (STE), materials with 100\% spin polarisation such as Co-based Heusler compounds as the ferromagnetic layer are required. However, these compounds are known to loose their half-metallicity in the ultrathin film regime, as it is difficult to achieve L2$_1$ ordering, which has become a bottleneck for the film growth. Here, the successful deposition using room temperature DC sputtering of the L2$_1$ and B2 ordered phases of the Co$_2$FeAl full Heusler compound is reported. Co$_2$FeAl is used as ferromagnetic layer together…
By imposing the constraints of structural compatibility, stability and a large tunneling magneto-resistance, we have identified the Fe$_3$Al/BiF$_3$/Fe$_3$Al stack as a possible alternative to the well-established FeCoB/MgO/FeCoB in the search for a novel materials platform for high-performance magnetic tunnel junctions. Various geometries of the Fe$_3$Al/BiF$_3$/Fe$_3$Al structure have been analyzed, demonstrating that a barrier of less than 2~nm yields a tunneling magneto-resistance in excess of 25,000~\% at low bias, without the need for the electrodes to be half-metallic. Importantly, the …
Magnetic skyrmions are topological spin structures having immense potential for energy efficient spintronic devices. However, observations of skyrmions at room temperature are limited to patterned nanostructures. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature and in zero external magnetic field employing magnetic force microscopy. The skyrmions are observed in a trilayer structure comprised of heavy metal (HM)/ferromagnet (FM)/Oxide interfaces which result in strong interfacial Dzyaloshinskii-Moriya interact…
This work reports on the structural and magnetic properties of Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ Heusler films with different Fe content x (0 $\leqslant$ x $\leqslant$ 1.2). The films were deposited heteroepitaxially on MgO single crystal substrates, by magnetron sputtering. Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ films with the thickness of 35 nm were crystallized in tetragonal D0$_{22}$ structure with (001) preferred orientation. Tunable magnetic properties were achieved by changing the Fe content x. Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ thins films exhibit high uniaxial anisotropy Ku $\geqslant$ 1.4 MJ/m3, co…
We report perpendicular magnetic anisotropy (PMA) in the half-metallic ferromagnetic Heusler alloy Co$_2$Fe$_{0.4}$Mn$_{0.6}$Si (CFMS) in a MgO/CFMS/Pd trilayer stack. PMA is found for CFMS thicknesses between 1 and 2 nm, with a magnetic anisotropy energy density of $K_U = 1.5\times 10^6$ erg/cm$^3$ for t$_{\tiny \textrm{CFMS}} = 1.5$ nm. Both the MgO and Pd layer are necessary to induce the PMA. We measure a tunable anomalous Hall effect, where its sign and magnitude vary with both the CFMS and Pd thickness.
The electronic transport and spincaloric properties of epitaxial magnetic tunnel junctions with half-metallic Co$_2$MnSi Heusler electrodes, MgO tunneling barriers, and different interface terminations are investigated by using first-principles calculations. A new approach to spincaloric properties is presented that circumvents the linear response approximation inherent in the Seebeck coefficient and compared to the method of Sivan and Imry. This approach supports two different temperatures in the two electrodes and provides the exact current and/or voltage response of the system. Moreover, it…
Transmission electron microscopy and ferromagnetic resonance investigations of tunnel magnetic junctions using Co2MnGe Heusler alloy as magnetic electrodes
Absence of orbital current torque in a magnetic metal/Pt/CuOx trilayer
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences（中国科学院半导体研究所半导体物理与芯片技术国家重点实验室）；University of Chinese Academy of Sciences（中国科学院大学）；College of Physics and Information Technology, Shaanxi Normal University（陕西师范大学物理与信息工程学院）
We investigate thickness series of films of the Heusler alloy Co$_2$FeAl in order to study the effect of annealing on the interface with a MgO layer and on the bulk magnetic properties. Our results reveal that while the perpendicular interface anisotropy constant $K^{\perp}_{\rm S}$ is zero for the as-deposited samples, its value increases with annealing up to a value of $1.14\, \pm \,0.07$~mJ/m$^2$ for the series annealed at 320$^{\rm o}$C and of $2.07\, \pm \,0.7$~mJ/m$^2$ for the 450$^{\rm o}$C annealed series owing to a strong modification of the interface during the thermal treatment. Thi…
