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arXiv 1309.2124cond-mat.mtrl-sci
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氧化物界面高迁移率二维电子气的起源与发展

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Y. Z. Chen, N. Pryds, J. R. Sun, B. G. Shen, S. Linderoth

摘要:

二维电子气(2DEG)在绝缘复合氧化物之间的明确界面的发现为新一代全氧化物电子学提供了机会。特别地,在由式ABO 3表示的两种钙钛矿绝缘体(例如LaAlO 3和SrTiO 3)之间的界面处的2DEG引起了显著的关注。近年来,人们在揭开界面导电起源之谜、设计新型氧化物界面以及显著提高界面载流子迁移率等方面取得了进展。这些成就为复杂氧化物的基础物理和应用物理的探索打开了大门。在这里,我们回顾了我们最近的实验工作,金属和绝缘界面控制的界面氧化还原反应SrTiO 3基异质结构。由于在SrTiO 3表面存在氧空位,当覆盖层氧化物ABO 3在B位点涉及Al、Ti、Zr或Hf元素时,可以在室温下在钙钛矿型界面中产生金属导电。此外,依靠界面稳定的氧空位,我们在SrTiO 3和具有相容氧离子亚晶格的尖晶石γ-Al 2 O 3外延膜之间的异质界面处产生了新型的2DEG。尖晶石/钙钛矿氧化物2DEG表现出超过100,000 cm 2 V-1 s-1的电子迁移率,比迄今为止研究的钙钛矿型界面的电子迁移率高一个数量级以上。我们的研究结果为高迁移率全氧化物电子器件的设计铺平了道路,并为复杂氧化物介观物理的研究开辟了一条道路。

英文摘要:

The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been made to decipher the puzzle of the origin of interface conduction, to design new types of oxide interfaces, and to improve the interfacial carrier mobility significantly. These achievements open the door to explore fundamental as well as applied physics of complex oxides. Here, we review our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures. Due to the presence of oxygen-vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 involves Al, Ti, Zr, or Hf elements at the B-sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ions sublattices. The spinel/perovskite oxide 2DEG exhibits an electron mobility exceeding 100,000 cm2V-1s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for design of high-mobility all-oxide electronic devices and open a route towards studies of mesoscopic physics with complex oxides.

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