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arXiv 1201.3871cond-mat.mtrl-sci
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III-III/I-V氧化物异质结构界面上增强的二维电子气电荷密度

Enhanced two dimensional electron gas charge densities at III-III/I-V oxide heterostructure interfaces

Valentino R. Cooper

摘要:

本文采用密度泛函理论研究了III-III/I-V氧化物界面的电子和原子重构。特别是,在这些界面处,观察到二维电子气(2DEG)的原型LaTiO 3/SrTiO 3异质结构的界面电荷密度的两倍。此外,示出的传导电子的带有效质量的显着减少,这表明可能的电子迁移率的增强是可以实现的。这些发现代表了化学调制2DEG的框架,从而提供了一个平台,通过该平台可以探索电子约束的基本物理学,并对现代微电子器件产生影响。

英文摘要:

In this paper, density functional theory calculations are used to explore the electronic and atomic reconstruction at interfaces between III-III/I-V oxides. In particular, at these interfaces, two dimensional electron gases (2DEGs) with twice the interfacial charge densities of the prototypical LaTiO3/SrTiO3 heterostructure are observed. Furthermore, a significant decrease in the band effective masses of the conduction electrons is shown, suggesting that possible enhancements in electron mobilities may be achievable. These findings represent a framework for chemically modulating 2DEGs, thereby providing a platform through which the underlying physics of electron confinement can be explored with implications for modern microelectronic devices.

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