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arXiv 1306.5269cond-mat.str-el
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轻电子掺杂对CeOs2Al10磁性基态的影响

Change of magnetic ground state by light electron-doping in CeOs2Al10

D. D. Khalyavin, D. T. Adroja, P. Manuel, J. Kawabata, K. Umeo, T. Takabatake, A. M. Strydom

摘要:

用高分辨中子衍射和磁化强度测量研究了具有异常高Neel温度T~28.5K的CeOs_2Al_(10)中Ir替代Os的效应。少量的Ir(~ 8%)导致Ce亚晶格的磁结构发生明显变化。新的磁基态由单离子各向异性控制,并意味着反铁磁安排的Ce-力矩沿a轴,预期从顺磁磁化率的各向异性。有序矩的值为0.92(1)μ B,比未掺杂的化合物大得多,而转变温度降低到21 K。观察到的现象与最近研究的CeRu1.9Rh0.1Al10系统的比较,表现出类似的行为[A. Kondo等人,日本物理学会82,054709(2013)],强烈地表明电子掺杂是基态变化的主要来源。这为研究Ce(Ru/Os)_2Al_(10)化合物的反常磁性提供了一条新的途径。

英文摘要:

The effect of Ir substitution for Os in CeOs2Al10, with an unusually high Neel temperature of T~28.5K, has been studied by high-resolution neutron diffraction and magnetization measurements. A small amount of Ir (~ 8%) results in a pronounced change of the magnetic structure of the Ce-sublattice. The new magnetic ground state is controlled by the single ion anisotropy and implies antiferromagnetic arrangement of the Ce-moments along the a-axis, as expected from the anisotropy of the paramagnetic susceptibility. The value of the ordered moments, 0.92(1) mu_B, is substantially bigger than in the undoped compound, whereas the transition temperature is reduced down to 21K. A comparison of the observed phenomena with the recently studied CeRu1.9Rh0.1Al10 system, exhibiting similar behaviour [A. Kondo et al., J. Phys. Soc. Jpn. 82, 054709 (2013)], strongly suggests the electron doping as the main origin of the ground state changes. This provides a new way of exploring the anomalous magnetic properties of the Ce(Ru/Os)2Al10 compounds.

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