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arXiv 1304.2689cond-mat.supr-con
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高质量KFe $_2$ As $_2$单晶的上临界场

Upper critical field of high quality single crystals of KFe$_2$As$_2$

Yong Liu, M. A. Tanatar, V. G. Kogan, Hyunsoo Kim, T. A. Lograsso, R. Prozorov

摘要:

本文用随温度变化的面内电阻率($ρ(T)$)测量方法,测定了化学计量比的砷化铁超导体KFe $_2$ As $_2$单晶的上临界场及其各向异性。晶体的特征在于剩余电阻率比,$ρ(300K)/ρ(0)$高达3000和电阻转变中点温度,$T_c$ =3.8 K,显着高于以前的研究相同的材料。我们发现增加的$H_{c2}(T)$的两个方向的磁场,其规模与增加的$T_c$。这种不寻常的线性$H_{c2}(T_c)$标度对于清洁材料中上临界场的轨道限制机制是不期望的。

英文摘要:

Measurements of temperature-dependent in-plane resistivity, $ρ(T)$, were used to determine the upper critical field and its anisotropy in high quality single crystals of stoichiometric iron arsenide superconductor KFe$_2$As$_2$. The crystals were characterized by residual resistivity ratio, $ρ(300K)/ρ(0)$ up to 3000 and resistive transition midpoint temperature, $T_c$=3.8 K, significantly higher than in previous studies on the same material. We find increased $H_{c2}(T)$ for both directions of the magnetic field, which scale with the increased $T_c$. This unusual linear $H_{c2}(T_c)$ scaling is not expected for orbital limiting mechanism of the upper critical field in clean materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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