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arXiv 1302.5757cond-mat.mtrl-sci
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掺银Ge-Sb-Te合金快速晶化的原子起源:实验与理论研究

Atomistic origin of doping-enhanced rapid crystallization in Ag-doped Ge-Sb-Te alloys: a joint experimental and theoretical study

B. Prasai, M. E. Kordesch, D. A. Drabold, G. Chen

摘要:

我们应用扩展X射线吸收精细结构(EXAFS)分析和从头算分子动力学(AIMD)模拟研究了Ag掺杂(最高达42%)Ge 1 Sb 2 Te 4合金的原子结构。对与EXAFS实验一致的模型的分析表明,Ag掺杂显着改变了Ge环境,而Sb和Te的环境几乎没有受到影响(除了高Ag浓度),Ag的掺杂促进了四面体Ge位向八面体Ge位的转化,提高了Ge-Sb-Te(GST)的晶化速度合金,直接从MD模拟证明。我们的研究揭示了Ag掺杂促进GST合金快速晶化的原子机制。

英文摘要:

We have applied extended X-ray absorption fine structure (EXAFS) analyses and ab-initio molecular dynamics (AIMD) simulations to study the atomic structure of Ag-doped (up to 42%) Ge1Sb2Te4 alloys. Analysis of the models that are consistent with the EXAFS experiment reveals that the Ge environment is significantly modified by Ag doping whereas those of Sb and Te are barely affected (except for high Ag concentrations), and suggests that Ag prefers bonding with Te to Ge or Sb. Doping with Ag promotes the conversion of tetrahedral Ge sites to octahedral Ge sites and enhances the speed of crystallization of Ge-Sb-Te (GST) alloys as evidenced directly from the MD simulations. Our study shed light on the atomistic mechanism of rapid crystallization of GST alloys enhanced by Ag doping.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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