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arXiv 1202.2213cond-mat.mtrl-sci
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BiFeO $_3$外延多层膜的磁性抑制

Suppression of magnetism in BiFeO$_3$ ultrathin epitaxial multilayers

K. Koumpouras, I. Galanakis

摘要:

本手稿完成了最近两篇研究文章中提出的研究[K. Koumpouras和我。Galanakis,\textit{J. Magn. Magn. Mater.} 323,2328(2011); \textit{ibid},\textit{J. Spintron. Magn. Nanomater.} 1,出版中]。给出了使用QUANTUM-espresso包[P. Gianjani et al \textit{J. Phys.:Condens. Matter} 21,395502(2009)]对BiFeO $_3$磁电化合物和各种类型的间隔物之间的超薄外延多层的磁性行为的初步第一性原理计算。作为间隔物,我们考虑了i)InP半导体,ii)铁,这是一个铁磁体,和iii)金属V。在所有的情况下,在研究的多层的生长轴是[001]。我们的研究结果表明,磁性能严重降级的无定形BiFeO $_3$多层膜的独立的间隔的性质,在某些情况下,正在研究的磁性甚至消失。需要更广泛的计算,以建立一个更清晰的界面的物理性质的BiFeO $_3$化合物。

英文摘要:

The present manuscript completes the study presented in two recent research articles [K. Koumpouras and I. Galanakis, \textit{J. Magn. Magn. Mater.} 323, 2328 (2011); \textit{ibid}, \textit{J. Spintron. Magn. Nanomater.} 1, in press]. Preliminary first-principles calculations using the QUANTUM-espresso package [P. Giannozzi et al \textit{J. Phys.:Condens. Matter} 21, 395502 (2009)] on the magnetic behavior of ultra-thin epitaxial multilayers between the BiFeO$_3$ magnetoelectric compound and various types of spacers are presented. As spacer we have considered i) InP semiconductor, ii) Fe which is a ferromagnet, and iii) metallic V. In all cases under study the growth axis of the multilayer was the [001]. Our results indicate that the magnetic properties are seriously downgraded for the ultrathin BiFeO$_3$ multilayers independent of the nature of the spacer and in some cases under study magnetism even vanishes. More extensive calculations are needed to establish a more clear view of the physical properties of the interfaces involving the BiFeO$_3$ compound.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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