The effect of high tensile strain and low dimensionality on the magnetic and electronic properties of CaMnO$_3$ ultrathin films, epitaxially grown on SrTiO$_3$ substrates, are experimentally studied and theoretically analyzed. By means of ab initio calculations, we find that, both, the high strain produced by the substrate and the presence of the free surface contribute to the stabilization of an in-plane ferromagnetic coupling, giving rise to a non-zero net magnetic moment in the ultrathin films. Coupled with this change in the magnetic order we find an insulator-metal transition triggered by the quantum confinement and the tensile epitaxial strain. Accordingly, our magnetic measurements in 3nm ultrathin films show a ferromagnetic hysteresis loop, absent in the bulk compound due to its G-type antiferromagnetic structure.
Epitaxial CaMnO3 films grown with 2.3% tensile strain on (001)-oriented LaAlO3 substrates are found to be incipiently ferroelectric below 25 K. Optical second harmonic generation (SHG) was used for the detection of the incipient polarization. The SHG analysis reveals that CaMnO3 crystallites with in-plane orientation of the orthorhombic b axis contribute to an electric polarization oriented along the orthorhombic a (resp.\ c) axis in agreement with the predictions from density functional calculations.
We use first-principles calculations to investigate the stability of bi-axially strained \textit{Pnma} perovskite CaMnO$_3$ towards the formation of oxygen vacancies. Our motivation is provided by promising indications that novel material properties can be engineered by application of strain through coherent heteroepitaxy in thin films. While it is usually assumed that such epitaxial strain is accommodated primarily by changes in intrinsic lattice constants, point defect formation is also a likely strain relaxation mechanism. This is particularly true at the large strain magnitudes ($>$4%) whi…
We report a strong thickness dependence of the complex frequency-dependent optical dielectric function in epitaxial CaMnO3(001) thin films on SrTiO3(001), LaAlO3(001), and SrLaAlO4(001) substrates. A doubling of the peak value of the imaginary part of the dielectric function and spectral shifts of 0.5 eV for a given magnitude of absorption are observed. On the basis of the experimental data and first-principles density functional theory calculations of the dielectric function, its evolution with thickness from 4 to 63 nm has several regimes. In the thinnest, strain-coherent films, the response…
By means of ab initio calculations, we study the effect of charge transfer and symmetry mismatch on the magnetic and electronic properties of CaMnO$_3$ ultrathin films, epitaxially grown on SrTiO$_3$ (001). We find that the interplay of these degrees of freedom, together with the low dimensionality and the strain imposed by the substrate, changes the bulk occupancy of the Mn e_$g$ orbitals, which determines the magnetic configuration of the ultrathin CMO films. A transition from an insulating G-type to a metallic A-type antiferromagnetic configuration is stabilized.
We investigate the behavior of ultrasharp metamagnetic transitions in La(5/8-y)Nd(y)Ca(3/8)MnO(3) manganites. These compounds change from a low temperature ferromagnetic metallic state at low Nd doping to a charge-ordered antiferromagnetic insulator for high Nd content. At an intermediate doping a phase-separated state is established. At low temperatures (2 K), we observe an avalanche-like field-induced metamagnetic transition, when the entire compound changes abruptly from one phase to the other. We investigate the signatures of this ultrasharp transition using magnetization and specific heat…
We use first-principles calculations to investigate the interplay between strain and the charge state of point defect impurities in complex oxides. Our work is motivated by recent interest in using defects as active elements to provide novel functionality in coherent epitaxial films. Using oxygen vacancies as model point defects, and CaMnO$_3$ and MnO as model materials, we calculate the changes in internal strain caused by changing the charge state of the vacancies, and conversely the effect of strain on charge-state stability. Our results show that the charge state is a degree of freedom tha…
Dimensionality-Driven Electronic and Orbital Transitions Mediating Interfacial Magnetism in LaNiO3/CaMnO3 Observed In Situ
Temple University（天普大学）；Flatiron Institute（平顿研究所）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；Cornell University（康奈尔大学）；University of California, Berkeley（加州大学伯克利分校）；Rutgers University（罗格斯大学）；Advanced Light Source, Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室先进光源中心）；Deutsches Elektronen-Synchrotron, DESY（德国电子同步辐射中心）；CNR-IOM Istituto Officina dei Materiali（意大利国家研究委员会材料研究所）；Università degli Studi di Padova（帕多瓦大学）；AREA Science Park（AREA科学园）；Columbia University（哥伦比亚大学）
Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nano strain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural resi…
A recently presented model is adapted to predict the effects of strain path change on the strain aging (bake hardening) behaviour of an ultra low carbon (ULC) steel. Samples pre-deformed by rolling were aged and then tested in uniaxial tension at 0, 45 and 90$^\circ$ degrees to the prior rolling direction. The results show that aging changes not only the yield strength of the material but also the work hardening rate. The increase in yield strength is interpreted to be dominated by a reduction in mobile dislocation density, this reflecting the classic ideas of Hahn and others. The change in wo…
In this work we are investigating the effect of strain in ultrathin Mn-Ga thin films on the magnetic properties at room temperature. Two different Mn-Ga compositions of which one is furthermore doped with Co were grown on Cr buffered MgO (001) substrates. Films with a thickness below 12nm are highly strained and it was observed that the ratio c/a vs. thickness is depending on composition. Using c/a as an order parameter the PMA is shown to be drastically reduced with increasing strain. These findings should be considered when generalizing and downscaling results obtained from films >20nm. Furt…
The ultrathin film limit has been shown to be a rich playground for unusual low dimensional physics. Taking the example of SrRuO$_3$ which is ferromagnetic and metallic at the bulk limit, one finds that it becomes antiferromagnetic and insulating at the three monolayers limit when grown on SrTiO$_3$. The origin of the insulating state is traced to strongly orbital dependent exchange splittings. A modest compressive strain of 1% of the SrTiO$_3$ substrate is then found to drive the system into a highly confined two-dimensional 100% spin polarized metallic state. This metal-insulator transition …
Tensile stress-strain behavior of Ni57.5Mn22.5Ga20.0 single crystal exhibiting a high-temperature 2M-martensitic phase stable up to 360\degree C has been studied in the course of thermal and mechanical cycling. The ultra-large reversible strains, about 9%, caused by the shape memory and superelasticity effects, have been observed up to 400 \degree C being the instrumental temperature limit. Abnormally large two-way shape memory effect with 9% of strain magnitude has been found. The cycling procedure and the variation of thermal/mechanical routs of the training of samples revealed the destabili…
We report results of large-scale molecular-dynamics (MD) simulations of dynamic deformation under biaxial tensile strain of pre-strained single-crystalline nanometer-scale-thick face-centered cubic (fcc) copper films. Our results show that stacking faults, which are abundantly present in fcc metals, may play a significant role in the dissociation, cross-slip, and eventual annihilation of dislocations in small-volume structures of fcc metals. The underlying mechanisms are mediated by interactions within and between extended dislocations that lead to annihilation of Shockley partial dislocations…
We report on the exchange coupling and magnetic properties of a strained ultrathin CoO/PtFe double-layer with perpendicular magnetic anisotropy. The cobalt oxide growth by reactive molecular beam epitaxy on a Pt-terminated PtFe/Pt(001) surface gives rise to an hexagonal surface and a monoclinic distorted CoO 3nm film at room temperature. This distorted ultrathin CoO layer couples with the PtFe(001) layer establishing a robust perpendicular exchange bias shift. Soft x-ray absorption spectroscopy provides a full description of the spin orientations in the CoO/PtFe doublelayer. The exchange bias …
Two-dimensional (2D) chromium tellurides have attracted considerable research interest for their high Curie temperatures. Their magnetic properties have been found diverse in various experiments, the understanding of which however remains limited. In this work, we report that the magnetic ordering of ultrathin chromium tellurides is structure dependent and can be tuned by external strain. Based on first-principles calculations and Monte Carlo simulations, we show long-range stable magnetism with high and low Curie temperature, and short-range magnetism in 2D Cr5Te8, CrTe2, and Cr2Te3 layers, r…
The first in situ quantitative synchrotron X-ray diffraction (XRD) study of plastic strain-induced phase transformation (PT) has been performed on $α-ω$ PT in ultra-pure, strongly plastically predeformed Zr as an example, under different compression-shear pathways in rotational diamond anvil cell (RDAC). Radial distributions of pressure in each phase and in the mixture, and concentration of $ω$-Zr, all averaged over the sample thickness, as well as thickness profile were measured. The minimum pressure for the strain-induced $α-ω$ PT, $p^d_{\varepsilon}$=1.2 GPa, is smaller than under hydrostat…
We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO$_3$ ultrathin films. First, the ferroelectric properties of free films at the atomic level are reviewed. For the explored thicknesses (10 to 23 unit cells), we find flux-closure domain structures whose morphology is thickness dependent. A critical value of 20 unit cells is observed: thinner films show structures with 90$^\circ$ domain loops, whereas thicker ones develop, in addition, 180$^\circ$ domain walls, giving rise to structures of the Landau-L…
2D-layered tin (II) oxide (SnO) has recently emerged as a promising bipolar channel material for thin-film transistors and complementary metal-oxide-semiconductor devices. In this work, we present a first-principles investigation of the mechanical properties of ultrathin SnO, as well as the electronic implications of tensile strain ($ε$) under both uniaxial and biaxial conditions. Bulk-to-monolayer transition is found to significantly lower the Young's and shear moduli of SnO, highlighting the importance of interlayer Sn-Sn bonds in preserving structural integrity. Unprecedentedly, few-layer S…
The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial compressive stress in the film plane. The intrinsic effect of the film surfaces on the spontaneous polarization is taken into account via the concept of the extrapolation length. The theory simultaneously allows for the influence of the misfit strain imposed on the film lattice by a thick substrate. Numerical calculations are performed for PbTiO3 and BaTiO3 films under an assumption of the polarization reduction in sur…
NiFe$_2$O$_4$ thin films with varying thickness were grown on SrTiO$_3$(001) by reactive molecular beam epitaxy. Soft and hard x-ray photoelectron spectroscopy measurements reveal a homogeneous cation distribution throughout the whole film with stoichiometric Ni:Fe ratios of 1:2 independent of the film thickness. Low energy electron diffraction and high resolution (grazing incidence) x-ray diffraction in addition to x-ray reflectivity experiments were conducted to obtain information of the film surface and bulk structure, respectively. For ultrathin films up to 7.3 nm, lateral tensile and vert…
Resonant ultrasound spectroscopy and magnetic susceptibility experiments have been used to characterize strain coupling phenomena associated with structural and magnetic properties of the shape-memory Heusler alloy series Ni$_{50+x}$Mn$_{25-x}$Ga$_{25}$ ($x=0$, 2.5, 5.0, and 7.5). All samples exhibit a martensitic transformation at temperature $T_M$ and ferromagnetic ordering at temperature $T_C$, while the pure end member ($x=0$) also has a premartensitic transition at $T_{PM}$, giving four different scenarios: $T_C>T_{PM}>T_M$, $T_C>T_M$ without premartensitic transition, $T_C\approx T_M$, a…
Ultrasensitive strain modulation of terahertz magnons at a magnetic phase transition
Max Planck Institute for Solid State Research（马克斯·普朗克固体研究所）；Deutsches Elektronen-Synchrotron DESY（德国电子同步加速器）；National Laboratory of Solid State Microstructures and School of Physics, Nanjing University（南京大学固体微结构物理国家重点实验室和物理学院）；Collaborative Innovation Center of Advanced Microstructures, Nanjing University（南京大学先进微结构协同创新中心）
Silicon telluride (Si2Te3) is a two-dimensional material with a unique variable structure where the silicon atoms form Si-Si dimers to fill the "metal" sites between the Te layers. The Si-Si dimers have four possible orientations: three in-plane and one out-of-the plane directions. The structural variability of Si2Te3 allows unusual properties especially the mechanical properties. Using results from first-principles calculations, we show that the Si2Te3 monolayer can sustain a uniaxial tensile strain up to 38%, highest among all two-dimensional materials reported. The high mechanical flexibili…
Fundamental understanding of interfacial magnetic properties in ferromagnetic heterostructures is essential to utilize ferromagnetic materials for spintronic device applications. In this paper, we investigate the interfacial magnetic and electronic structures of epitaxial single-crystalline LaAlO$_3$ (LAO)/La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO)/Nb:SrTiO$_3$ (Nb:STO) heterostructures with varying LSMO-layer thickness, in which the magnetic anisotropy strongly changes depending on the LSMO thickness due to the delicate balance between the strains originating from both the Nb:STO and LAO layers, usin…
The phenomenon of ferromagnetic resonance (FMR) provides fundamental information on the physics of magnetic materials and lies at the heart of a variety of signal processing microwave devices. Here we demonstrate theoretically that substrate-induced lattice strains may change the FMR frequency of an epitaxial ferromagnetic film dramatically, leading to ultralow and ultrahigh resonance frequencies at room temperature. Remarkably, the FMR frequency varies with the epitaxial strain nonmonotonically, reaching minimum at a critical strain corresponding to the strain-induced spin reorientation trans…
Effect of biaxial tensile strains on optical functions and band edge transitions of ultra thin epitaxial films was studied using as an example a 13 nm thick SrTiO3 films deposited on KTaO3(100) single-crystal substrates. Optical functions were determined by spectroscopic ellipsometry technique. It was found that tensile strains result in a shift of the low energy band gap optical transitions to higher energies and decrease the refractive index in the visible region. Comparison of the optical spectra for strained SrTiO3 films and for homoepitaxial strain-free SrTiO3:Cr (0.01 %at.) films deposit…
We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to obtain an ultrashort photocarrier relaxation time of $τ\sim$ 1.5 ps without Be-doping of the InGaAs photoconductor. We assume two dominant mechanisms to be responsible for a sharp reduction of $τ$: photocarriers trapping by defect levels in InAlAs barriers and increased photocarriers scattering at InGaAs/InAlAs interface roughness due to residual strain in th…
Epitaxial strain plays an important role in determining physical properties of perovskite ferroelectric oxide thin films. However, it is very challenging to directly measure properties such as polarization in ultrathin strained films using traditional sandwich capacitor devices, because of high leakage current. We employed a planar electrode device with different crystallographical orientations between electrodes along different electric field orientation to directly measure the in-plane polarization-electric field (P-E) hysteresis loops in fully strained thin films. At high misfit strains suc…
We have synthesized epitaxial NdNiO$_{3}$ ultra-thin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO$_{3}$ (001) and LaAlO$_3$ (001), respectively. A combination of X-ray diffraction, temperature dependent resistivity, and soft X-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO$_{3}$, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.
We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling of the released membranes. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered and the resulting membranes provide a unique laboratory to study low-dimens…
The mechanical stretchability is the magnitude of strain which a material can suffer before it breaks. Materials with high mechanical stretchability, which can reversibly withstand extreme mechanical deformation and cover arbitrary surfaces and movable parts, are used for stretchable display devices, broadband photonic tuning and aberration-free optical imaging. Strain can be utilised to control the band structures of materials and can even be utilised to induce a topological phase transition, driving the normal insulators to topological non-trivial materials with non-zero Chern number or Z2 n…
Motivated by the recently observed unconventional Hall effect in ultra-thin films of ferromagnetic SrRuO$_3$ (SRO) we investigate the effect of strain-induced oxygen octahedral distortion in the electronic structure and anomalous Hall response of the SRO ultra-thin films by virtue of density functional theory calculations. Our findings reveal that the ferromagnetic SRO films grown on SrTiO$_3$ (in-plane strain of $-$0.47$\%$) have an orthorhombic (both tilting and rotation) distorted structure and with an increasing amount of substrate-induced compressive strain the octahedral tilting angle is…
BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on band alignments and carrier mobility, considering BAs as both a thin film and a substrate for lattice-matched materials. The results show that strain decreases the band gap independent of sign or direction. In addition, biaxial tensile strain increases the in-plane electron and hole mobilities by more than 60% compared to the unstrained values due t…
Quasi-longitudinal and quasi-transverse picosecond strain pulses injected into a ferromagnetic (311) (Ga,Mn)As film induce dynamical shear strain in the film, thereby modulating the magnetic anisotropy and inducing resonant precession of the magnetization at a frequency ~10 GHz. The modulation of the out-of-plane magnetization component by the quasitransverse strain reaches amplitudes as large as 10% of the equilibrium magnetization. Our theoretical analysis is in good agreement with the observed results, thus providing a strategy for ultrafast magnetization control in ferromagnetic films by s…
The interaction between strain and spin has received intensive attention in the scientific community due to its abundant physical phenomena and huge technological impact. Until now, there is no experimental report on ultra-high frequency magnetic resonance through the strain-spin coupling for any technologically relevant perpendicular magnetic material. Here we report the experimental detection of the acoustic strain waves that have a response time on the order of 10 picoseconds in perpendicular magnetic [Co/Pd]n multilayers via a femtosecond laser pulse excitation. Through direct measurements…
We report the epitaxial growth of PdTe$_2$ ultrathin films on topological insulator Bi$_2$Se$_3$. A prominent Moiré pattern was observed in STM measurements. The Moiré periodicity increases as film thickness decreases, indicating a lattice expansion of epitaxial PdTe$_2$ thin films with lower thicknesses. In addition, our simulations based on Moiré Metrology reveal uniaxial lattice strains at the edge of PdTe$_2$ domains, and anisotropic strain distributions throughout the Moiré supercell with a net change in lattice strain up to ~2.9%. Our DFT calculations show that this strain effect leads t…
We present a synchrotron grazing incidence x-ray diffraction analysis of the domain structure and polar symmetry of highly strained BiFeO3 thin films grown on LaAlO3 substrate. We revealed the existence of periodic elastic nanodomains in the pure tetragonal-like BFO ultrathin films down to a thickness of 6 nm. A unique shear strain accommodation mechanism is disclosed. We further demonstrated that the periodicity of the nanodomains increases with film thickness but deviates from the classical Kittel's square root law in ultrathin thickness regime (6 - 30 nm). Temperature-dependent experiments …
We present molecular dynamics simulations of a realistic model of an ultrathin film of BaTiO$_3$ sandwiched between short-circuited electrodes to determine and understand effects of film thickness, epitaxial strain and the nature of electrodes on its ferroelectric phase transitions as a function of temperature. We determine a full epitaxial strain-temperature phase diagram in the presence of perfect electrodes. Even with the vanishing depolarization field, we find that ferroelectric phase transitions to states with in-plane and out-of-plane components of polarization exhibit dependence on thic…
Topological insulators are non-trivial quantum states of matter which exhibit a gap in the electronic structure of their bulk form, but a gapless metallic electronic spectrum at the surface. Here, we predict a uniaxial strain induced electronic topological transition (ETT) from a band to topological insulating state in the rhombohedral phase (space group: R$\bar{3}$m) of As$_2$Te$_3$ ($β$-As$_2$Te$_3$) through \textit{first-principles} calculations including spin-orbit coupling within density functional theory. The ETT in $β$-As$_2$Te$_3$ is shown to occur at the uniaxial strain $ε_{zz}$ = -0.…
Enabling the light-control of complex systems on ultra-short timescales gives rise to rich physics with promising applications. While crucial, the quantitative determination of both the longitudinal and shear photo-induced strains still remains challenging. Here, by scrutinizing asymmetric Bragg peaks pairs $(\pm h01)$ using picosecond time-resolved X-ray diffraction experiments in BiFeO$_3$, we simultaneously determine the longitudinal and shear strains. The relative amplitude of those strains can be explained only if both thermal and non-thermal processes contribute to the acoustic phonon ph…
The tunability of the bandgap, absorption and emission energies, photoluminescence (PL) quantum yield, exciton transport, and energy transfer in transition metal dichalcogenide (TMD) monolayers provides a new class of functions for a wide range of ultrathin photonic devices. Recent strain-engineering approaches have enabled us to tune some of these properties, yet dynamic control at the nanoscale with real-time and -space characterizations remains a challenge. Here, we demonstrate a dynamic nano-mechanical strain-engineering of naturally-formed wrinkles in a WSe2 monolayer, with real-time inve…
In pursuit of rational control of orbital polarization, we present a combined experimental and theoretical study of single unit cell superlattices of the correlated metal LaNiO$_3$ and the band insulator LaAlO$_3$. Polarized x-ray absorption spectra show a distinct asymmetry in the orbital response under strain. A splitting of orbital energies consistent with octahedral distortions is found for the case of compressive strain. In sharp contrast, for tensile strain, no splitting is found although a strong orbital polarization is present. Density functional theory calculations including a Hubbard…
We investigate coherent phonon propagation in a thin film of ferroelectric PbZr0.2Ti0.8O3 (PZT) by ultrafast x-ray diffraction (UXRD) experiments, which are analyzed as time-resolved reciprocal space mapping (RSM) in order to observe the in- and out-of-plane structural dynamics simultaneously. The mosaic structure of the PZT leads to a coupling of the excited out-of-plane expansion to in-plane lattice dynamics on a picosecond timescale, which is not observed for out-of-plane compression.
A high-speed 100 MHz strain monitor using a fiber Bragg grating, an optical filter, and a mode-locked optical fiber laser has been devised, which has a resolution of $ΔL/L\sim10^{-4}$. The strain monitor is sufficiently fast and robust for the magnetostriction measurements of magnetic materials under ultrahigh magnetic fields generated with destructive pulse magnets, where the sweep rate is in the range of 10-100 T/$μ$s. As a working example, the magnetostriction of LaCoO$_{3}$ was measured at room temperature, 115 K, and 7$\sim$4.2 K up to a maximum magnetic field of 150 T. The smooth $B^{2}$…
Nanomagnetic implementations of Boolean logic [1,2] have garnered attention because of their non-volatility and the potential for unprecedented energy-efficiency. Unfortunately, the large dissipative losses that take place when nanomagnets are switched with a magnetic field [3], or spin-transfer-torque [4] inhibit the promised energy-efficiency. Recently, there have been experimental reports of utilizing the Spin Hall effect for switching magnets [5-7], and theoretical proposals for strain induced switching of single-domain magnetostrictive nanomagnets [8-12], that might reduce the dissipative…
The structure and strain of ultrathin CoO films grown on a Pt(001) substrate and on a ferromagnetic PtFe pseudomorphic layer on Pt(001) have been determined with insitu and real time surface x-ray diffraction. The films grow epitaxially on both surfaces with an in-plane hexagonal pattern that yields a pseudo-cubic CoO(111) surface. A refined x-ray diffraction analysis reveals a slight monoclinic distortion at RT induced by the anisotropic stress at the interface. The tetragonal contribution to the distortion results in a ratio c/a > 1, opposite to that found in the low temperature bulk CoO pha…
Temperature and fluence dependence of the transient photoinduced reflectivity and the magnetooptical Kerr angle was measured in two Pr0.6Ca0.4MnO3 thin films subject to tensile and compressive substrate-induced strain. A photoinduced transient ferromagnetic metallic (TFM) phase is found to form below ~60K and ~40K in the substrate-strained and substrate-compressed film, respectively. From the hysteresis loops a difference in the TFM cluster sizes and amount of photomodulation is observed at low temperatures and low excitation fluences in the films with different strain. Surprisingly, the chara…
The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong band gap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The band gap change upon biaxial strain is determined through photoluminescence measurements, finding a gau…
Employing density functional theory based calculations, we investigate structural, vibrational and strain-dependent electronic properties of an ultra-thin CdTe crystal structure that can be de- rived from its bulk counterpart. It is found that this ultra-thin crystal has an 8-atom primitive unit cell with considerable surface reconstructions. Dynamic stability of the structure is predicted based on its calculated vibrational spectrum. Electronic band structure calculations reveal that both electrons and holes in single layer CdTe possess anisotropic in-plane masses and mobilities. Moreover, we…
