arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1111.6734cond-mat.str-el
收藏

SrRuO $_{3}$中反常霍尔效应的标度

Scaling of the anomalous Hall effect in SrRuO$_{3}$

Noam Haham, Yishai Shperber, Moty Schultz, Netanel Naftalis, Efrat Shimshoni, James W. Reiner, Lior Klein

摘要:

测量了巡游铁磁体SrRuO $_{3}$薄膜的反常霍尔效应(AHE)电阻率$ρ_{xy}$。在低温下,AHE系数$R_{s}$随$ρ_{xx}^2$而变化,在较高温度下,$R_{s}$达到峰值,然后在$T_{c}$之下改变符号。我们发现,对于所有的薄膜研究$R_{s}$规模与电阻率在整个铁磁相。我们将所观察到的行为归因于非本征侧跳机制和本征Karplus-Luttinger(Berry相)机制的贡献,包括有限散射率的影响。

英文摘要:

We measure the anomalous Hall effect (AHE) resistivity $ρ_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $ρ_{xx}^2$, and at higher temperatures, $R_{s}$ reaches a peak and then changes sign just below $T_{c}$. We find that for all films studied $R_{s}$ scales with resistivity in the entire ferromagnetic phase. We attribute the observed behavior to the contribution of the extrinsic side jumps mechanism and the intrinsic Karplus-Luttinger (Berry phase) mechanism including the effect of finite scattering rates.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑