We present a tight-binding investigation of strained bilayer graphene within linear elasticity theory, focusing on the different environments experienced by the A and B carbon atoms of the different sublattices. We find that the inequivalence of the A and B atoms is enhanced by the application of perpendicular strain $ε_{zz}$, which provides a physical mechanism for opening a band gap, most effectively obtained when pulling the two graphene layers apart. In addition, perpendicular strain introduces electron-hole asymmetry and can result in linear electronic dispersion near the K-point. When applying lateral strain to one layer and keeping the other layer fixed, we find the opening of an indirect band gap for small deformations. Our findings suggest experimental means for strain-engineered band gaps in bilayer graphene.
Very recently, a new type of two-dimensional layered material MoSi2N4 has been fabricated, which is semiconducting with weak interlayer interaction, high strength, and excellent stability. We systematically investigate theoretically the effect of vertical strain on the electronic structure of MA2Z4 (M=Ti/Cr/Mo, A=Si, Z=N/P) bilayers. Taking bilayer MoSi2N4 as an example, our first principle calculations show that its indirect band gap decreases monotonically as the vertical compressive strain increases. Under a critical strain around 22%, it undergoes a transition from semiconductor to metal. …
Two-dimensional van der Waals magnetic materials are intriguing for applications in the future spintronics devices, so it is crucial to explore strategy to control the magnetic properties. Here, we carried out first-principles calculations and Monte Carlo simulations to investigate the effect of biaxial strain and hydrostatic pressure on the magnetic properties of the bilayer CrI3. We found that the magnetic anisotropy, intralayer and interlayer exchange interactions, and Curie temperature can be tuned by biaxial strain and hydrostatic pressure. Large compressive biaxial strain may induce a fe…
Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of bilayer graphene (BLG) which subsequently influences the electronic structure of the bilayer. Here, we use Density Functional Theory (DFT) calculations to investigate the interplay between an external applied heterostrain and the resulting stacking in BLG. We determine how a strain applied to one layer is transferred to a second, 'free' layer and at what critica…
Ultra-thin film of FeRh on insulator MgO substrate has been investigated usingab-initio electronic structure calculations. From this calculation, we have found the interesting effect of epitaxial strain on the magnetocrystalline anisotropy (MCA). Analysis of the energy and k-resolved distribution of the orbital character of the band structure reveals that MCA largely arises from the spin-orbit coupling (SOC) between dx2-y2 andd xz,yz orbitals of Fe atoms at the FeRh/MgO interface. We demonstrate that the strain has significant effects on the MCA: It not only affects the value of the MCA but al…
For controlling the critical electric fields of the topological phase transition in single bilayer Bi(111), we investigated topological phases in a strained system through first-principles calculations. We found a quadratic band touching semimetallic state at tensile strain $ε=0.5$%. Around this strain, the topological phase can be switched to a trivial insulator by an infinitesimal electric field. The positions at which Dirac cones appear in the electric-field-induced topological phase transition changed for the strain $ε>0.5$% and $ε<0.5$%. Our results indicate that this topological phase tr…
A monolayer of CrI$_3$ is a two-dimensional crystal that in its equilibrium configuration is a ferromagnetic semiconductor, however, two coupled layers can be ferromagnetic or antiferromagnetic depending on the stacking. We study the magnetic phase diagram upon the strain of the antiferromagnetically coupled bilayer with C2/m symmetry. We found that strain may be an efficient tool to tune the magnetic phase of the structure. A tensile strain stabilizes the antiferromagnetic phase, while a compressive strain turns the system ferromagnetic. We understood that behavior by looking at the relative …
Device fabrication often requires materials that are either reliably conducting, reliably semiconducting, or reliably nonconducting. Bilayer graphene (BLG) changes from a superconductor to a semiconductor depending on it's stacking, but because it is difficult to control its stacking, it is not a reliable material for device fabrication. Using DFTB+, this work demonstrates that bilayers of graphenylene, net-C, and net-W can be reliably used for device fabrication without knowing the details of their stackings. Bilayers of graphenylene and net-C are semiconducting for all sheer displacements, n…
Detection of local strain at the nanometer scale with high sensitivity remains challenging. Here we report near-field infrared nano-imaging of local strains in bilayer graphene through probing strain-induced shifts of phonon frequency. As a non-polar crystal, intrinsic bilayer graphene possesses little infrared response at its transverse optical (TO) phonon frequency. The reported optical detection of local strain is enabled by applying a vertical electrical field that breaks the symmetry of the two graphene layers and introduces finite electrical dipole moment to graphene phonon. The activate…
Two-dimensional (2D) layered materials provide an ideal platform for engineering electronic and optical properties through strain control because of their extremely high mechanical elasticity and sensitive dependence of material properties on mechanical strain. In this paper, a combined experimental and theoretical effort is made to investigate the effects of mechanical strain on various spectral features of bilayer MoTe2 photoluminescence (PL). We found that bilayer MoTe2 can be converted from an indirect-to direct-bandgap material through strain engineering, resulting in a photoluminescence …
In this work, the electrical properties of bilayer Antimonene with different stacking orders are studied. Density functional theory with van der Waals (vdW) correction is used to investigate the electrical performances. Two configurations demonstrate considerable bandgaps, whereas, the bandgaps are close to zero for other structures. The in-plane biaxial strain is applied to modify the electrical properties. The bandgap reaches a maximum at a specific strain level and then closes at more enormous compressive and tensile strains. The energy of three valleys ($Γ$, Q, and K) in the conduction ban…
In two-dimensional (2D) twisted bilayers, the van der Waals (vdW) interlayer interaction introduces atomic-scale reconstruction at interface by locally rotating lattice to form strain-field vortex networks in their moiré superlattice. However, direct imaging the tiny local lattice rotation of the strain-field vortex requires extremely high spatial resolution and is an outstanding challenge in experiment. Here, a topmost small-period graphene moiré pattern is introduced to magnify sub-Angstrom distortions of the lattice and tiny local lattice rotation in underlying twisted bilayer graphene (TBG…
Strain and Electric Field Modulation of the Electronic Structure of Bilayer Graphene
利用密度泛函理论的{ \it ab initio}方法，采用LMTO和LAPW方法，研究了电场和应变对双层石墨烯（BLG）电子结构的影响.六方和Bernal堆叠结构被认为是。BLG是一种零能隙半导体，类似于石墨烯的隔离层。我们发现，而应变单独不产生的BLG中的间隙，电场这样做的Bernal结构，但不是在六方结构。带的拓扑结构导致狄拉克圆与线性色散的情况下的六边形堆叠的BLG由于狄拉克锥的相互渗透，而Bernal堆叠，色散是二次的。狄拉克圆的大小随着外加电场的增加而增加，这就产生了一种有趣的控制费米面的方法。由于层之间的极化电荷，外部电场被屏蔽，导致带隙和狄拉克圆的尺寸减小。筛选是实质性的，在这两种情况下和分歧的贝尔纳结构的小领域已经指出，由以前的作者。作为这项工作的一个双产品，我们提出了紧密结合的参数为独立的单层石墨烯通过拟合的密度泛函带，无论有和没有狄拉克锥的斜率约束。
Mechanical strain induced topological phase changes of monolayer and bilayer ZrTe$_5$
Hungarian Research Network, HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science（匈牙利研究网络，HUN-REN能源研究中心，技术物理与材料科学研究所）；MTA - HUN-REN EK Lendület "Momentum" Topology in Nanomaterials Research Group（匈牙利科学院-HUN-REN EK Lendület“动量”纳米材料拓扑研究组）；ELTE Eötvös Loránd University, Department of Physics of Complex Systems（厄特沃什·罗兰大学，复杂系统物理学系）；ELTE Eötvös Loránd University, Department of Biological Physics（厄特沃什·罗兰大学，生物物理学系）
With exceptional electrical and mechanical properties and at the same time air-stability, layered MoSi2N4 has recently draw great attention. However, band structure engineering via strain and electric field, which is vital for practical applications, has not yet been explored. In this work, we show that the biaxial strain and external electric field are effective ways for the band gap engineering of bilayer MoSi$_2$N$_4$ and WSi$_2$N$_4$. It is found that strain can lead to indirect band gap to direct band gap transition. On the other hand, electric field can result in semiconductor to metal t…
Non-Hermitian Tight-Binding Bands in Graphene: Optical Conductivity, Strain Effects, and Bernal Bilayer Extension
Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing, School of Materials Science and Engineering, Yangtze Normal University（重庆特殊键工程与先进材料技术重点实验室，长江师范学院材料科学与工程学院）
Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice periodicity as well as localized structural deformations that introduce disorder and strain. Here, we introduce Bragg interferometry, based on four-dimensional scanning transmission electron microscopy, to capture atomic displacement fields in twisted bilayer graphene with twist angles < 2°. Nanoscale spatial fluctuations in twist angle and uniaxial heterostra…
We study the effects of heterostrain on moiré bands in twisted bilayer graphene and bilayer transition metal dichalcogenide (TMD) systems. For bilayer graphene with twist angle near $1^\circ$, we show that heterostrain significantly increases the energy separation between conduction and valence bands as well as the Dirac velocity at charge neutrality, which resolves several puzzles in scanning tunneling spectroscopy and quantum oscillation experiments at once. For bilayer TMD, we show that applying small heterostrain generally leads to flat moiré bands that are highly tunable.
Topological properties of electronic states in multivalley two-dimensional materials, such as mono- and bilayer graphene, or thin films of rhombohedral graphite, give rise to various unusual magneto-transport regimes. Here, we investigate the tunability of the topological magnetic moment (related to the Berry curvature) of electronic states in bilayer graphene using strain and vertical bias. We show how one can controllably vary the valley $g$-factor of the band-edge electrons, $g_v^*$, across the range $10 < |g_v^*| < 200$, and we discuss the manifestations of the topological magnetic moment …
Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group of 2D vdW III2-VI3 materials with out-of-plane ferroelectricity have attracted substantial attentions. In this work, the structural, electronic and optical properties of 2D ferroelectric Ga2O3 bilayer system are systematically studied using ab-initio computational method. Intrinsic dipoles of the two freestanding monolayers lead to three distinct dipole models (one ferroelectric and two antiferroelectric models). Th…
Perovskite oxynitrides are a promising class of material for photocatalytic water-splitting due to their small band gaps and suitably aligned band edges. Recently, epitaxially strained oxynitrides started to attract interest due to the possibility to engineer the anion order and ferroelectric distortions. However, contrary to oxides there have been no studies on the band-gap evolution in oxynitrides with epitaxial strain. Here, we investigate, using density functional theory calculations, the influence of epitaxial strain on the band gap of two different oxynitrides and compare our results wit…
We present a comparative study on the morphology and structural as well as magnetic properties of crystalline Fe$_3$O$_4$/NiO bilayers grown on both MgO(001) and SrTiO$_3$(001) substrates by reactive molecular beam epitaxy. These structures are investigated by means of x-ray photoelectron spectroscopy, low energy electron diffraction, x-ray reflectivity and diffraction as well as vibrating sample magnetometry. While the lattice mismatch of NiO grown on MgO(001) is only 0.8%, it is exposed to a lateral lattice mismatch of -6.9% if grown on SrTiO$_3$. In the case of Fe$_3$O$_4$, the misfit strai…
We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles calculations, we find that TDBG is semiconducting with a band gap that depends on the twist angle, that can be tuned by an external electric field. The gap is consistent with TDBG symmetry and its magnitude is related to surface effects, driving electron transfer from outer to inner layers. The surface effect competes with an energy upshift of localized states at i…
Magnetic properties of bilayer Sr$_3$Ir$_2$O$_7$: role of epitaxial strain and oxygen vacancies
用{ \it ab initio}方法研究了SrIridates Ruddlesden-Popper系列SrPDMATHABMO Ir $_{m}$ O $_{3m+1}$，双层结构SrPDMATHABMR Ir $_2$ O $_7$的磁性随外延应变和氧空位的变化.与单层化合物Sr $_2$ IrO $_4$不同，其表现出稳健的面内磁序，Sr $_3$ Ir $_2$ O $_7$中的面内和面外磁序之间的能量差小得多，并且预计小的外部扰动可以诱导磁跃迁。我们的研究结果表明，外延应变产生的自旋翻转转变，这是由之间的交叉层$J_1$和层间$J_2$磁交换相互作用压缩应变。$J_1$对应变效应基本上不敏感，而$J_2$的强度在拉伸应变$\geq$ 3~ 1%时变化一个数量级。此外，我们的研究澄清了不寻常的平面内观察到的磁响应在Sr $_3$ Ir $_2$ O $_7$的应用程序时的外部磁场源于由于氧空位，倾斜的八面体网络的局部磁矩的倾斜-从而允许非共线的自旋配置。
In this work, the structural, electrical, and optical properties of bilayer SiX (X= N, P, As, and Sb) are studied using density functional theory (DFT). Five different stacking orders are considered for every compound and their structural properties are presented. The band structure of these materials demonstrates that they are indirect semiconductors. The out-of-plane strain has been applied to tune the bandgap and its electrical properties. The bandgap increases with tensile strain, whereas, compressive strain leads to semiconductor-to-metal transition. The sensitivity of the bandgap to the …
