We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 towards increasingly insulating behavior and then, at higher pressures, the sample appears to enter a fully metallic state coincident with a change in the crystal structure. Within the low pressure phase, Bi2Se3 exhibits an unusual field dependence of the transverse magnetoresistance that is positive at low fields and becomes negative at higher fields. Our results demonstrate that pressures below 8 GPa provide a non-chemical means to controllably reduce the bulk conductivity of Bi2Se3.
We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance measurement for the monolayer graphene reveals the largest Fermi energy modulation (EF = ~0.52 eV, i.e., the carrier density of ~2*10^13 cm^-2) in the solid-state topgate insulators reported so far. HP-PDA is the robust method to improve the electrical quality of high-k insulators on graphene.
By means of first-principles methods we analyze the optical response of transparent dense sodium as a function of applied pressure. We discover an unusual kind of charge-transfer exciton that proceeds from the interstitial distribution of valence electrons repelled away from the ionic cores by the Coulomb interaction and the Pauli repulsion. The predicted absorption spectrum shows a strong anisotropy with light polarization that just at pressures above the metal-insulator transition manifests as sodium being optically transparent in one direction but reflective in the other. This result provid…
We report a systematic study of spin transport in antiferromagnetic (AF) insulators having a wide range of ordering temperatures. Spin current is dynamically injected from Y3Fe5O12 (YIG) into various AF insulators in Pt/insulator/YIG trilayers. Robust, long-distance spin transport in the AF insulators is observed, which shows strong correlation with the AF ordering temperatures. We find a striking linear relationship between the spin decay length in the AFs and the damping enhancement in YIG, suggesting the critical role of magnetic correlations in the AF insulators as well as at the AF/YIG in…
The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in electronic topology: an E2 g phonon softens unusually and its linewidth exhibits an asymmetric peak at the pressure induced electronic topological transition (ETT) in Sb2Se3 crystal. Our first-principles calculations confirm the electronic transition from band to topological insulating state with reversal of parity of electronic bands passing through a metall…
Pressure-induced insulator-to-metal transition (IMT) has been studied in the van der Waals compound iron thiophosphate (FePS3) using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid Hartree-Fock-DFT B3LYP functional. Our calculations reproduce correctly the IMT at ~15 GPa, which is accompanied by a reduction of the unit cell volume and of the vdW gap. We found from the detailed analysis of the projected density of states that the 3p states of phosphorus atoms contribute significantly at the bottom of the conduction band. As a result, th…
Based on the Phase Hamiltonian, two types of solitons are found to exist in the crossover region between band insulator and Mott insulator in one-dimension. Both of these solitons have fractional charges but with different spins, zero and 1/2, respectively. The results are in accord with the experimental results by Kanoda et al. for TTF-Chloranil under pressure.
Hydrostatic pressure and oxygen vacancies usually have deleterious effects on ferroelectric materials because both tend to reduce their polarization. In this work we use first-principles calculations to study an important class of ferroelectric materials - LiNbO$_3$-type ferroelectrics (LiNbO$_3$ as the prototype), and find that in oxygen-deficient LiNbO$_{3-δ}$, hydrostatic pressure induces an unexpected metal-insulator transition between 8 and 9 GPa. Our calculations also find that strong polar displacements persist in both metallic and insulating oxygen-deficient LiNbO$_{3-δ}$ and the size …
Transport properties of Ce$_{0.85}$F0.15SbS$_{2}$ and undoped CeOSbS$_{2}$ under high pressure were investigated experimentally and theoretically. Electrical resistivity measurements of the Ce$_{0.85}$F0.15SbS$_{2}$ single crystals were performed under various high pressures using a diamond anvil cell with boron-doped diamond electrodes. The samples showed the insulator to metal transition by applying high pressure up to 30-40 GPa. On the other hand, the undoped CeOSbS$_{2}$ showed almost same transport property with the F-doped sample under high pressure. The valence state analysis using X-ra…
Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, is investigated under an applied hydrostatic pressure up to 2 GPa. The easy axis direction of the magnetization is inferred from the AMR saturation feature in the presence and absence of the applied pressure. At zero applied pressure, the easy axis is along the c-direction or perpendicular to the layer. Upon application of a hydrostatic pressure>1 GPa, the uniaxial anisotropy switches to easy-plane anisotropy which drives the equilibrium magnetization from the c-axis to the ab-plane at zero magnetic fiel…
Intrinsic magnetic topological insulators provide an ideal platform to achieve various exciting physical phenomena. However, this kind of materials and related research are still very rare. In this work, we reported the electronic and structural phase transitions in intrinsic magnetic topological insulator MnSb2Te4 driven by hydrostatic pressure. Electric transport results revealed that temperature dependent resistance showed a minimum value near short-range antiferromagnetic (AFM) ordering temperature TN', the TN' values decline with pressure, and the AFM ordering was strongly suppressed near…
In-situ high pressure single crystal X-ray diffraction study reveals that the quantum material CaMn$_2$Bi$_2$ undergoes a unique plane to chain structural transition between 2 and 3 GPa, accompanied by a large volume collapse. CaMn2Bi2 displays a new structure type above 2.3 GPa, with the puckered Mn honeycomb lattice of the trigonal ambient-pressure structure converting to one-dimensional (1D) zigzag chains in the high-pressure monoclinic structure. Single crystal measurements reveal that the pressure-induced structural transformation is accompanied by a dramatic two order of magnitude drop o…
Silicon telluride (Si2Te3) is a two-dimensional semiconductor with unique structural properties due to the size contrast between Si and Te atoms. A recent experiment shows that the material turns metallic under hydrostatic pressure, while the lattice structure of the metallic phase remains to be identified. In this paper, we propose two metallic phases, M1 and M2, of Si2Te3 using the evolution algorithm and first-principles density functional theory (DFT) calculations. Unlike the presence of Si-Si dimers in the semiconducting (SC) phase, both M1 and M2 phases have individual Si atoms, which pl…
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This sluggish transition is shown to occur at 35 GPa. Transport measurements show no evidence of superconductivity to the lowest measured temperature (~ 2 K). The structure results presented here differ from earlier in-situ work that subjected the sample to a different pressure state, suggesting that in NiPS3 the phase stability fields are highly depen…
Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in large-band-gap insulators. Here we report how such negative-$U$ centers are responsible for widespread insulator-to-metal transitions in amorphous HfO$_2$ and Al$_2$O$_3$ thin films with a 10$^9$-fold resistance drop. Triggered by a static hydraulic pressure or a 0.1 ps impulse of magnetic pressure, the transition can proceed at such low pressure that there …
Understanding the intrinsic charge transport in organolead halide perovskites is essential for the development of high-efficiency photovoltaics and other optoelectronic devices. Despite the rapid advancement of the organolead halide perovskite in photovoltaic and optoelectronic applications, the intrinsic charge carrier transport in these materials remains elusive partly due to the difficulty of fabricating electrical devices and obtaining good electrical contact. Here, we report the fabrication of organolead halide perovskite microplates with monolayer graphene as low barrier electrical conta…
Topological insulators are predicted to present novel surface transport phenomena, but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that a new topological insulator, Bi2Te2Se, presents a high resistivity exceeding 1 Ohm-cm and a variable-range hopping behavior, and yet presents Shubnikov-de Haas oscillations coming from the surface Dirac fermions. Furthermore, we have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport in this material. Our re…
We study the influence of external pressure on the electronic and magnetic structure of EuMnO3 from first-principles calculations. We find a pressure-induced insulator-metal transition at which the magnetic order changes from A-type antiferromagnetic to ferromagnetic with a strong interplay with Jahn-Teller distortions. In addition, we find that the non-centrosymmetric E*-type antiferromagnetic order can become nearly degenerate with the ferromagnetic ground state in the high-pressure metallic state. This situation can be exploited to promote a magnetically-driven realization of a non-centrosy…
Crystal structures of $\textrm{CLi}_4$ compounds are explored through \emph{ab} \emph{initio} evolutionary methodology. Phase transition from metal to semimetal and semiconductor, and eventually to insulator with increasing pressure are revealed under pressure. Pressure-induced evolution of anti-metallization has been described quantitatively by Fermi Surface Filling Ratio and electron energy band gap using \emph{ab} \emph{initio} \emph{GW} calculations. Anti-metallization is attributed to the hybrid valence electrons and their repulsion by core electrons into the lattice interstices. Very wea…
Using ab initio evolutionary simulations, we predict the existence of five novel stable Li-N compounds at pressures from 0 to 100 GPa (Li13N, Li5N, Li3N2, LiN2, and LiN5). Structures of these compounds contain of isolated N ions, N2 dimers, polyacetylene-like N chains and N5 rings, respectively. The structure of Li13N consists of Li atoms and Li12N icosahedra (with N atom in the center of the Li12 icosahedron) such icosahedra are notdescribed by Wade-Jemmis electron counting rules and are unique. Electronic structure of Li-N compounds is found to dramatically depend on composition and pressure…
A comprehensive understanding of the physical origin of the unique magnetic and transport properties of A_(1-x)A'^xMnO_3 manganites (A = trivalent rare-earth and A' = divalent alkali-earth metal) is still far from being achieved. The complexity of these systems arises from the interplay among several competing interactions of comparable strength. Recently the electron-phonon coupling, triggered by a Jahn-Teller distortion of the MnO_6 octahedra, has been recognised to play an essential role in the insulator to metal transition and in the closely related colossal magneto-resistance. The pressur…
Using Car-Parrinello molecular dynamics calculations we investigate the behavior of the low-dimensional multiorbital Mott insulator TiOCl under pressure. We show that the system undergoes {\it two} consecutive phase transitions, first at $P_\text{c}$ from a Mott-insulator to a metallic phase in the $ab$ plane with a strong Ti-Ti dimerization along $b$. At a pressure $P'_\text{c} > P_\text{c}$ the dimerization disappears and the system behaves as a uniform metal. This second transition has not yet been reported experimentally. We show that the insulator-to-metal transition at $P_\text{c}$ is dr…
We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m* ~ 8me) in the metallic state indicate the narrow character of the 3d band. The electric conduction at low temperatures (T = 2 …
Calculations employing the local density approximation combined with static and dynamical mean-field theories (LDA+U and LDA+DMFT) indicate that the metal-insulator transition observed at 32 GPa in paramagnetic LaMnO3 at room temperature is not a Mott-Hubbard transition, but is caused by orbital splitting of the majority-spin eg bands. For LaMnO3 to be insulating at pressures below 32 GPa, both on-site Coulomb repulsion and Jahn-Teller distortion are needed.
Ab initio calculations predict a metal-insulator transition at zero temperature to occur in La$_4$Ni$_3$O$_8$ at moderate pressures as a result of a pressure-induced spin-state transition. The spin-state transition that is seen at 105 K at ambient pressure from a low-temperature high-spin state to a high-temperature low-spin state has been observed to be shifted to lower temperatures as pressure is applied. From our calculations we find that a smaller unit cell volume favors the metallic low-spin state, which becomes more stable at 5 GPa. Similar physics should take place in the related compou…
A complex interplay of different energy scales involving Coulomb repulsion, spin-orbit coupling and Hund's coupling energy in two-dimensional (2D) van der Waals (vdW) material produces novel emerging physical state. For instance, ferromagnetism in vdW charge transfer insulator CrGeTe$_3$, that provides a promising platform to simultaneously manipulate the magnetic and electrical properties for potential device implementation using few layers thick materials. Here, we show a continuous tuning of magnetic and electrical properties of CrGeTe$_3$ single crystal using pressure. With application of …
The metal-insulator and spin state transitions of CoO under high pressure are studied by using density functional theory combined with dynamical mean-field theory. Our calculations predict that the metal-insulator transition in CoO is a typical orbital selective Mott transition, where the $t_{2g}$ orbitals of Co 3d shell become metallic firstly around 60 GPa while the $e_g$ orbitals still remain insulating until 170 GPa. Further studies of the spin states of Co 3d shell reveal that the orbital selective Mott phase in the intermediate pressure regime is mainly stabilized by the high-spin state …
A pressure-induced simultaneous metal-insulator transition (MIT) and structural-phase transformation in lithium hydride with about 1% volume collapse has been predicted by means of the local density approximation (LDA) in conjunction with an all-electron GW approximation method. The LDA wrongly predicts that the MIT occurs before the structural phase transition. As a byproduct, it is shown that only the use of the generalized-gradient approximation together with the zero-point vibration produces an equilibrium lattice parameter, bulk modulus, and an equation of state that are in excellent agre…
The pressure induced superconductivity and structural evolution for Bi2Se3 single crystal have been studied. The emergence of superconductivity with onset transition temperature (Tc) about 4.4K is observed around 12GPa. Tc increases rapidly to the highest 8.5K at 16GPa, decreases to 6.5K at 21GPa, then keep almost constant. It is found that Tc versus pressure is closely related to the carrier density which increases by more than two orders of magnitude from 2GPa to 23GPa. High pressure synchrotron radiation measurements reveal structure transitions occur around 12GPa, 20GPa, and above 29GPa, r…
We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic order results from superexchange among correlated electrons and couples to a (1/2, 1/2, 1/2) superlattice distortion. Applying pressure suppresses the insulating state, but enhances the magnetism as the superexchange increases with decreasing lattice constant. By comparing our results under pressure to previous studies of doped crystals we show that this depen…
The intertwined charge, spin, orbital, and lattice degrees of freedom could endow 5d compounds with exotic properties. Current interest is focused on electromagnetic interactions in these materials, whereas the important role of lattice geometry remains to be fully recognized. For this sake, we investigate pressure-induced phase transitions in the spin-orbit Mott insulator Sr3Ir2O7 with Raman, electrical resistance, and x-ray diffraction measurements. We reveal an interesting magnetic transition coinciding with a structural transition at 14.4 GPa, but without a concurrent insulator-metal trans…
We report a series of high-pressure electrical transport, magnetic susceptibility, and x-ray diffraction measurements on single crystals of the weak topological insulator Bi2TeI and the topological metal Bi3TeI. Room temperature x-ray diffraction measurements show that both materials go through a series of pressure-induced structural transitions and eventually adopt a disordered bcc alloy structure at high pressure. A re-analysis of the published data on BiTeI indicates that this material also adopts a disordered bcc structure at high pressure, in contrast to the previously suggested P4/nmm st…
The Local Density Approximation combined with Dynamical Mean-Field Theory (LDA+DMFT method) is applied to the study of the paramagnetic and magnetically ordered phases of hematite Fe$_2$O$_3$ as a function of volume. As the volume is decreased, a simultaneous 1st order insulator-metal and high-spin to low-spin transition occurs close to the experimental value of the critical volume. The high-spin insulating phase is destroyed by a progressive reduction of the charge gap with increasing pressure, upon closing of which the high spin phase becomes unstable. We conclude that the transition in Fe$_…
We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk states, often times contradicting each other, and a proper understanding of TI transport properties is lacking. According to the simple criteria given by Mott and Ioffe-Regel, even the best TIs are not true insulators in the Mott sense, and at best, are weakly-insulating bad metals. However, band-bending effects contribute significantly to the TI transport …
Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are ill-understood metallic states in $d$- and $f$-band compounds near Mott-like transitions. Finding of superconductivity in solid O$_{2}$ on the border of an insulator-metal transition at high pressures close to 96~GPa is thus truly remarkable. Neither the insulator-metal transition nor superconductivity are understood satisfactorily. Here, we undertake a first step in …
We derive the Onsager response matrix of fluctuation-mediated spin-collinear transport through a ferromagnetic insulator and normal metal interface driven by a temperature difference, spin accumulation, or magnetic field. We predict magnon-squeezing spin currents, magnetic field-induced cooling (magnon Peltier effect), temperature induced magnetization (thermal magnetic field) as well as universal spin Seebeck/Peltier coefficients.
The magnetic van der Waals crystals (MnX2Te4)m(X2Te3)n (X = Sb, Bi) have drawn significant attention due to their rich topological properties and the tenability by external magnetic field. In this work, we report on the discovery of superconductivity in magnetic topological insulator candidate MnSb4Te7 (m = 1, n = 1) via the application of high pressure. The antiferromagnetic ordering is robust to pressure until 8 GPa and then fully suppressed. The carrier type converts from hole- to electron-type accompanied with structural phase transition at around 15 GPa. Superconductivity emerges near the…
Various transition metal trichalcogenides (TMTC) show the charge-density-wave and superconductivity, which provide an ideal platform to study the correlation between these two orderings and the mechanism of superconductivity. Currently, almost all metallic TMTC compounds can show superconductivity either at ambient pressure or at high pressure. However, most TMTC compounds are semiconductors and even insulators. Does the superconductivity exist in any non-metal TMTC compound? In this work, we managed to manipulate the electronic behavior of highly insulating HfS3 in term of pressure. HfS3 unde…
Recently, natural van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states. In this work, we systematically investigate both the structural and electronic responses of MnBi2Te4 and MnBi4Te7 to external pressure. In addition to the suppression of antiferromagnetic order, MnBi2Te4 is found to undergo a metal-semiconductor-metal transition upon compression. The resistivity of MnBi4Te7 changes dramatically under high pressure and a non-monotonic evolution of \r{h…
Recently discovered class of 2D materials based on transition metal phosphorous trichalcogenides exhibit antiferromagnetic ground state, with potential applications in spintronics. Amongst them, FePS$ _{3} $ is a Mott insulator with a band gap of $\sim$ 1.5 eV. This study using Raman spectroscopy along with first-principles density functional theoretical analysis examines the stability of its structure and electronic properties under pressure. Raman spectroscopy reveals two phase transitions at 4.6 GPa and 12 GPa marked by the changes in pressure coefficients of the mode frequencies and the nu…
Protected by the interplay of on-site Coulomb interactions and spin-orbit coupling, Sr$_2$IrO$_4$ at high pressure is a rare example of a Mott insulator with a paramagnetic ground state. Here, using optical Raman scattering, we measure both the phonon and magnon evolution in Sr$_2$IrO$_4$ under pressure, and identify three different magnetically-ordered phases, culminating in a spin-disordered state beyond 18 GPa. A strong first-order structural phase transition drives the magnetic evolution at $\sim$10 GPa with reduced structural anisotropy in the IrO$_6$ cages, leading to increasingly isotro…
Mott insulator superconductor transition, via pressure and no external doping, is studied in orbitally non degenerate spin-\half systems. It is presented as another RVB route to high \tc superconductivity. We propose a `strong coupling' hypothesis which helps to view first order Mott transition as a self doping process that also preserves superexchange on metal side . We present a generalized t-J model where a conserved $N_0$ doubly occupied ($e^-$) sites and $N_0$ empty sites ($e^+$) hop in the background of $N - 2 N_0$ singly singly occupied (neutral) sites in a lattice of N sites. An equiva…
The axion is a hypothetical but experimentally undetected particle. Recently, the antiferromagnetic topological insulator MnBi$_2$Te$_4$ has been predicted to host the axion insulator, but the experimental evidence remains elusive. Specifically, the axion insulator is believed to carry "half-quantized" chiral currents running antiparallel on its top and bottom surfaces. However, it is challenging to measure precisely the half-quantization. Here, we propose a nonlocal surface transport device, in which the axion insulator can be distinguished from normal insulators without a precise measurement…
Topological insulators have gapless edge/surface states with novel transport properties. Among these, there are two classes of perfectly conducting channels which are free from backscattering: the edge states of two-dimensional topological insulators and the one-dimensional states localized on dislocations of certain three-dimensional topological insulators. We show how these novel states affect thermoelectric properties of the systems and discuss possibilities to improve the thermoelectric figure of merit using these materials with perfectly conducting channels.
We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topolog…
The discovery of three-dimensional (3D) topological insulators opens a gateway to generate unusual phases and particles made of the helical surface electrons, proposing new applications using unusual spin nature. Demonstration of the helical electron transport is a crucial step to both physics and device applications of topological insulators. Topological insulator nanowires, of which spin-textured surface electrons form 1D band manipulated by enclosed magnetic flux, offer a unique nanoscale platform to realize quantum transport of spin-momentum locking nature. Here, we report an observation o…
We present a method for calculating the spectrum of periodic solids within reduced density matrix functional theory. This method is validated by a detailed comparison of the angular momentum projected spectral density with that of well established many-body techniques, in all cases finding an excellent agreement. The physics behind the pressure induced insulator-metal phase transition in MnO is investigated. The driving mechanism of this transition is identified as increased crystal field splitting with pressure, resulting in a charge redistribution between the Mn $e_g$ and $t_2g$ symmetry pro…
Insulator to Metal Transition, Spin-Phonon Coupling, and Potential Magnetic Transition Observed in Quantum Spin Liquid Candidate LiYbSe$_2$ under High Pressure
Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2
State Key Laboratory of Micro-nano Engineering Science, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学物理与天文学院微纳工程科学国家重点实验室人工结构量子控制教育部重点实验室）；Tsung-Dao Lee Institute, Shanghai Jiao Tong University（上海交通大学李政道研究所）；Center for High Pressure Science & Technology Advanced Research (HPSTAR)（高压科学与技术前沿研究中心）；Max Planck Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments, Institute for Shanghai Advanced Research in Physical Sciences（上海极端环境材料前沿研究重点实验室上海物理科学研究院）；Zhiyuan College, Shanghai Jiaotong University（上海交通大学致远学院）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（国立材料研究所电子与光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（国立材料研究所材料纳米架构研究中心）；Hefei National Laboratory（合肥国家实验室）；Shanghai Research Center for Quantum Sciences（上海量子科学研究与创新中心）；Department of Physics and Astronomy, University of Tennessee, Knoxville（田纳西大学诺克斯维尔分校物理与天文系）；Department of Physics, National University of Singapore（新加坡国立大学物理系）
A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complet…
In magnetic topological insulators, quantized electronic transport is interwined with spontaneous magnetic ordering, as magnetization controls band gaps, hence band topology, through the exchange interaction. We show that considering the exchange gaps at the mean-field level is inadequate to predict phase transitions between electronic states of distinct topology. Thermal spin fluctuations disturbing the magnetization can act as frozen disorders that strongly scatter electrons, reducing the onset temperature of quantized transport appreciably even in the absence of structural impurities. This …
