Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in large-band-gap insulators. Here we report how such negative-$U$ centers are responsible for widespread insulator-to-metal transitions in amorphous HfO$_2$ and Al$_2$O$_3$ thin films with a 10$^9$-fold resistance drop. Triggered by a static hydraulic pressure or a 0.1 ps impulse of magnetic pressure, the transition can proceed at such low pressure that there is very little overall deformation (strain~10$^{-5}$). Absent a significant energy change overall, the transition is attributed to the reversal of localized electron-phonon interaction: By reversing the sign of $U$, trapped electrons are destabilized and released, thus clearing conduction paths previously blocked by charged traps. The results also suggest that Mott insulators when disordered may become Anderson insulators with strong electron-phonon interactions regulating incipient conduction paths, a novel finding of technological significance for electronic devices.
Enhancement of the dielectric response of insulators by disorder is theoretically proposed, where the quantum interference of electronic waves through the nanoscale/mesoscopic system and its change due to external perturbations control the polarization. In the disordered case with all the states being localized, the resonant tunneling, which is topologically protected, plays a crucial role, and enhances the dielectric response by a factor 30~40 compared with the pure case. Realization of this idea with accessible materials/structures is also discussed.
We theoretically study the spin and charge generation along with the electron transport on a disordered surface of a doped three-dimensional topological insulator/magnetic insulator junction by using Green's function techniques. We find that the spin and charge current are induced by not only local but also nonlocal magnetization dynamics through nonmagnetic impurity scattering on the disordered surface of the doped topological insulator. We also clarify that the spin current as well as charge density are induced by spatially inhomogeneous magnetization dynamics, and the spin current diffusive…
Abstract: Using ab initio calculations supported by experimental transport measurements, we present the first credible candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High energy reactive ball-milling produces a polymorph of Cu2ZnSnS4 with high cation disorder, which shows an inverted ordering of bands at the Brillouin zone center, in contrast to its ordered phase. Adiabatic continuity arguments establish that this disordered Cu2ZnSnS4 can be connected to the closely related Cu2ZnSnSe4, previously predicted to be a 3D topological in…
Topological behavior can be masked when disorder is present. A topological insulator, either intrinsic or interaction induced, may turn gapless when sufficiently disordered. Nevertheless, the metallic phase that emerges once a topological gap closes retains several topological characteristics. By considering the self-consistent disorder-averaged Green function of a topological insulator, we derive the condition for gaplessness. We show that the edge states survive in the gapless phase as edge resonances and that, similar to a doped topological insulator, the disordered topological metal also h…
Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest, due both to their intrinsic properties and to higher order emergence phenomena that can be achieved by manipulating the interface environment [4-11]. Here, angle resolved photoemission (ARPES) spectromicroscopy and supplementary scanning tunneling microscopy (STM) are performed on the model topological insulator Bi2Se3 to investigate the interplay of crystal…
The generalized bulk-boundary correspondence predicts the existence of the chiral hinge states in three-dimensional second-order topological insulators (3DSOTIs), resulting in a quantized Hall effect in three dimensions. Chiral hinge states in Hermitian 3DSOTIs are characterized by the quantized transmission coefficients with zero fluctuations, even in the presence of disorders. Here, we show that chiral hinge transport in disordered non-Hermitian systems deviates from the paradigm of the Hermitian case. Our numerical calculations prove the robustness of hinge states of disordered non-Hermitia…
We study supercurrent and proximity vortices in a Josephson junction made of disordered surface states of a three-dimensional topological insulator with a proximity induced in-plane helical magnetization. In a regime where the rotation period of helical magnetization is larger than the junction width, we find supercurrent 0-π crossovers as a function of junction thickness, magnetization strength, and parameters inherent to the helical modulation and surface states. The supercurrent reversals are associated with proximity induced vortices, nucleated along the junction width, where the number of…
A global phase diagram of disordered weak and strong topological insulators is established numerically. As expected, the location of the phase boundaries is renormalized by disorder, a feature recognized in the study of the so-called topological Anderson insulator. Here, we report unexpected quantization, i.e., robustness against disorder of the conductance peaks on these phase boundaries. Another highlight of the work is on the emergence of two subregions in the weak topological insulator phase under disorder. According to the size dependence of the conductance, the surface states are either …
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
It is believed, that a disordered one-dimensional (1D) wire with coherent electronic conduction is an insulator with the mean resistance <ρ> \simeq e^{2L/ξ} and resistance dispersion Δ_ρ \simeq e^{L/ξ}, where L is the wire length and ξis the electron localisation length. Here we show that this 1D insulator undergoes at full coherence the crossover to a 1D "metal", caused by thermal smearing and resonant tunnelling. As a result, Δ_ρ is smaller than unity and tends to be L/ξ- independent, while <ρ> grows with L/ξfirst nearly linearly and then polynomially, manifesting the so-called medium locali…
We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements in the absence of the magnetic field and observe large signal due to the edge states. It demonstrates, that the edge states can propagate over long distance 1 mm, and, therefore, there is no difference between local and non local electrical measurements in topological insulator. In the presence of the in-plane magnetic field we find strong decrease of the lo…
We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-c…
We consider a disordered topological insulator thin film placed on the top of a ferromagnetic insulator with a perpendicular exchange field $M$ and subjected to a perpendicular electric field. The presence of ferromagnetic insulator causes that bottom surface states of the topological insulator thin film become spin polarized and the electric field provides a potential difference $V$ between the two surface states, resulting in breaking of time-reversal and inversion symmetry in the system. Using Kubo formalism and employing the first Born approximation as well as the self-consistent Born appr…
We study theoretically the role of quenched magnetic disorder at the surface of a topological insulator by numerical simulation and scaling analysis. It is found that all the surface states are localized while the transverse conductivity is quantized to be $\pm {{e^2} \over {2 h}}$ as long as the Fermi energy is within the bulk gap. This greatly facilitates the realization of the topological magnetoelectric effect proposed by Qi {\it et al.} (Phys. Rev. B\textbf{78}, 195424 (2008)) with the surface magnetization direction being controlled by the simultaneous application of magnetic and electri…
In this numerical study we investigate the influence and interplay of disorder, spin-orbit coupling and magnetic field on the edge-transport in HgTe/CdTe quantum wells in the framework of coherent elastic scattering. We show that the edge states remain unaffected by the combined effect of moderate disorder and a weak magnetic field at realistic spin-orbit coupling strengths. Agreement with the experimentally observed linear magnetic field dependence for the conductance of long samples is obtained when considering the existence of charge puddles.
In disordered two dimensional Chern insulators, a single bulk extended mode is predicted to exist per band, up to a critical disorder strength; all the other bulk modes are localized. This behavior contrasts strongly with topologically trivial two-dimensional phases, whose modes all become localized in the presence of disorder. Using a tight-binding model of a realistic photonic Chern insulator, we show that delocalized bulk eigenstates can be observed in an experimentally realistic setting. This requires the selective use of resonator losses to suppress topological edge states, and acquiring …
Impurities and defects are ubiquitous in topological insulators (TIs) and thus understanding the effects of disorder on electronic transport is important. We calculate the distribution of the random conductance fluctuations $P(G)$ of disordered 2D TI wires modeled by the Bernevig-Hughes-Zhang (BHZ) Hamiltonian with realistic parameters. As we show, the disorder drives the TIs into different regimes: metal (M), quantum spin-Hall insulator (QSHI), and ordinary insulator (OI). By varying the disorder strength and Fermi energy, we calculate analytically and numerically $P(G)$ across the entire pha…
The axion insulator is a higher-order topological insulator protected by inversion symmetry. We show that under quenched disorder respecting inversion symmetry {\it on average}, the topology of the axion insulator stays robust, and an intermediate metallic phase in which states are delocalized is unavoidable at the transition from an axion insulator to a trivial insulator. We derive this conclusion from general arguments, from classical percolation theory, and from the numerical study of a 3D quantum network model simulating a disordered axion insulator through a layer construction. We find th…
The role of disorder in the field of three-dimensional time reversal invariant topological insulators has become an active field of research recently. However, the computation of Z2 invariants for large, disordered systems still poses a considerable challenge. In this paper we apply and extend a recently proposed method based on the scattering matrix approach, which allows the study of large systems at reasonable computational effort with few-channel leads. By computing the Z2 invariant directly for the disordered topological Anderson insulator, we unambiguously identify the topological nature…
We investigate the scattering and localization properties of edge and bulk states in a disordered two-dimensional topological insulator when they coexist at the same fermi energy. Due to edge-bulk backscattering (which is not prohibited \emph{a priori} by topology or symmetry), Anderson disorder makes the edge and bulk states localized indistinguishably. Two methods are proposed to effectively decouple them and to restore robust transport. The first kind of decouple is from long range disorder, since edge and bulk states are well separated in $k$ space. The second one is from an edge gating, o…
In this Letter, we study an Anderson-localization-induced quantized transport in disordered Chern insulators (CIs). By investigating the disordered CIs with a step potential, we find that the chiral interface states emerge along the interfaces of the step potential, and the energy range for such quantized transport can be manipulated through the potential strength. Furthermore, numerical simulations on cases with a multi-step potential demonstrate that such chiral state can be spatially shifted by varying the Fermi energy, and the energy window for quantized transport is greatly enlarged. Expe…
The quantum phase diagram of disordered wires in a strong magnetic field is studied as a function of wire width and energy. The two-terminal conductance shows zero-temperature discontinuous transitions between exactly integer plateau values and zero. In the vicinity of this transition, the chiral metal-insulator transition (CMIT), states are identified that are superpositions of edge states with opposite chirality. The bulk contribution of such states is found to decrease with increasing wire width. Based on exact diagonalization results for the eigenstates and their participation ratios, we c…
The disorder-driven metal-insulator transition in the quantum spin Hall systems is studied by scaling analysis of the Thouless conductance $g$. Below a critical disorder strength, the conductance is independent of the sample size $M$, an indication of critically delocalized electron states. The calculated beta function $β=d\ln g/d\ln M$ indicates that the metal-insulator transition is Kosterlitz-Thouless (KT) type, which is characterized by bounding and unbounding of vortex-antivortex pairs of the local currents. The KT like metal-insulator transition is a basic characteristic of the quantum s…
The paper proposes a self-consistent Green function description of the induced surface superconductivity in a disordered three-dimensional topological insulator (TI) coupled to an s-wave superconductor. We recover earlier results regarding the induced spin-triplet p-wave pairing, showing that a mixture of p- and s-wave pair correlations appears as a result of broken spin-rotation symmetry on the helical surface of the TI. Unlike the s-wave pairing, the p-wave component is found to be suppressed in dirty TIs in which the elastic mean-free path is much smaller than the superconducting coherence …
We investigate a disordered two-dimensional lattice model for noninteracting electrons with long-range power-law transfer terms and apply the method of level statistics for the calculation of the critical properties. The eigenvalues used are obtained numerically by direct diagonalization. We find a metal-insulator transition for a system with orthogonal symmetry. The exponent governing the divergence of the correlation length at the transition is extracted from a finite size scaling analysis and found to be $ν=2.6\pm 0.15$. The critical eigenstates are also analyzed and the distribution of the…
We investigate disorder-driven topological phase transitions in quantized electric quadrupole insulators. We show that chiral symmetry can protect the quantization of the quadrupole moment $q_{xy}$, such that the higher-order topological invariant is well-defined even when disorder has broken all crystalline symmetries. Moreover, nonvanishing $q_{xy}$ and consequent corner modes can be induced from a trivial insulating phase by disorder that preserves chiral symmetry. The critical points of such topological phase transitions are marked by the occurrence of extended boundary states even in the …
The topological Anderson and Mott insulators are two phases that have so far been separately and widely explored beyond topological band insulators. Here we combine the two seemingly different topological phases into a system of spin-1/2 interacting fermionic atoms in a disordered optical lattice. We find that the topological Anderson and Mott insulators in the noninteracting and clean limits can be adiabatically connected without gap closing in the phase diagram of our model. Lying between the two phases, we uncover a disordered correlated topological insulator, which is induced from a trivia…
Spin transport through magnetic insulators via magnons has recently been explored for a growing variety of magnetic systems with long-range order and well-understood spin excitation spectra. Here we show dramatic effects of spin transport through an amorphous magnetic insulator, which is both magnetically and structurally disordered. We generate and detect spin flow though amorphous yttrium-iron-garnet ($a$-YIG) thin films in a non-local geometry by use of the spin Hall and inverse spin Hall effects in platinum strips separated by 10 or more microns. By comparing non-local spin transport in $a…
We study low-lying electron levels in an "antidot" capturing a coreless vortex on the surface of a three-dimensional topological insulator in the presence of disorder. The surface is covered with a superconductor film with a hole of size R larger than coherence length, which induces superconductivity via proximity effect. Spectrum of electron states inside the hole is sensitive to disorder, however, topological properties of the system give rise to a robust Majorana bound state at zero energy. We calculate the subgap density of states with both energy and spatial resolution using the supersymm…
In magnetically doped thin-film topological insulators, aligning the magnetic moments generates a quantum anomalous Hall phase supporting a single chiral edge state. We show that as the system de-magnetizes, disorder from randomly oriented magnetic moments can produce a `quantum anomalous parity Hall' phase with \emph{helical} edge modes protected by a unitary reflection symmetry. We further show that introducing superconductivity, combined with selective breaking of reflection symmetry by a gate, allows for creation and manipulation of Majorana zero modes via purely electrical means and at ze…
We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while the electron scattering rate off Coulombic impurities and surface roughness is calculated using self-consistent current-relaxation theory. The methods are combined and self-consistently solved. We discuss a metal-insulator transition for a range of disorder levels and electron densities. Our results are in good agreement with recent experimental observations.
In this communication, we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the free mean path due to elastic scattering much smaller than the sample size and discuss disordered transport behaviors in the presence of different numbers of chiral edge modes, as well as non-chiral metallic modes. Our numerical results demonstrate that the presence of multiple chiral edge modes or non-chiral metallic modes will lead to a strong Andreev conver…
We study the construction of programable integrated circuits with the help of disordered Chern insulators (CIs) in this letter. Specifically, the schemes for low dissipation logic devices and connecting wires are proposed. We use the external-gate-induced step voltage to construct spatially adjustable channels, where these channels take the place of the conventional wires. Our numerical calculation manifests that the external gates can be adopted to program the arbitrary number of wires ($n$-to-$m$ connections). We find that their electron transport is dissipationless and robust against gate v…
A higher-order topological insulator is a new concept of topological states of matter, which is characterized by the emergent boundary states whose dimensionality is lower by more than two compared with that of the bulk, and draws a considerable interest. Yet, its robustness against disorders is still unclear. Here we investigate a phase diagram of higher-order topological insulator phases in a breathing kagome model in the presence of disorders, by using a state-of-the-art machine learning technique. We find that the corner states survive against the finite strength of disorder potential as l…
In two dimensions chaotic level-statistics is expected for massless Dirac fermions in the presence of disorder. For weakly disordered graphene flakes with zigzag edges the obtained level-spacing distribution in the Dirac region is neither chaotic (Wigner) nor localized (Poisson) but similar to that at the critical point of the Anderson metal-insulator transition. The quantum transport in finite graphene can occur via critical edge states as in topological insulators, for strong disorder the Dirac region vanishes and graphene behaves as ordinary Anderson insulator.
We study topological indices of Fermionic time-reversal invariant topological insulators in two dimensions, in the regime of strong Anderson localization. We devise a method to interpolate between certain Fredholm operators arising in the context of these systems. We use this technique to prove the bulk-edge correspondence for mobility-gapped 2D topological insulators possessing a (Fermionic) time-reversal symmetry (class AII) and provide an alternative route to a theorem by Elgart-Graf-Schenker (2005) about the bulk-edge correspondence for strongly-disordered integer quantum Hall systems. We …
A direct signature of electron transport at the metallic surface of a topological insulator is the Aharonov-Bohm oscillation observed in a recent study of Bi_2Se_3 nanowires [Peng et al., Nature Mater. 9, 225 (2010)] where conductance was found to oscillate as a function of magnetic flux $ϕ$ through the wire, with a period of one flux quantum $ϕ_0=h/e$ and maximum conductance at zero flux. This seemingly agrees neither with diffusive theory, which would predict a period of half a flux quantum, nor with ballistic theory, which in the simplest form predicts a period of $ϕ_0$ but a minimum at zer…
We study disordered topological insulators with time reversal symmetry. Relying on the noncommutative index theorem which relates the Chern number to the projection onto the Fermi sea and the magnetic flux operator, we give a precise definition of the $Z_2$ index which is a noncommutative analogue of the Atiyah-Singer $Z_2$ index. We prove that the noncommutative $Z_2$ index is robust against any time-reversal symmetric perturbation including disorder potentials as long as the spectral gap at the Fermi level does not close.
We analyse the topological transition and localization evolution of disordered two dimensional systems with non trivial topology based on bipartite lattices. Chern insulators with broken time reversal symmetry show non standard behavior for disorder realizations selectively distributed on only one of the sublattices. The Chern number survives to a much stronger disorder strength (one order of magnitude higher) than in the equally distributed disordered case and the final state in the strongly disordered case is metallic.
The Landauer "residual resistivity dipole" is a well-known concept in electron transport through a disordered medium. It is formed when a defect/scatterer reflects an impinging electron causing negative charges to build up on one side of the scatterer and positive charges on the other. This results in the formation of a microscopic electric dipole that affects the resistivity of the medium. Here, we show that an equivalent entity forms in spin polarized electron transport through the surface of a disordered topological insulator (TI). When electrons reflect from a scatterer on the TI surface, …
We theoretically study the coupling of electric charge and spin polarization in an equilibrium and nonequilibrium electric transport across a two dimensional Josephson configuration comprised of disordered surface channels of a three dimensional topological insulator. In the equilibriun state of the system we predict the Edelstein effect, which is much more pronounced than its counterpart in conventional spin orbit coupled materials. Employing a quasiclassical Keldysh technique, we demonstrate that the ground state of system can be experimentally shifted into arbitrary macroscopic superconduct…
We consider an antiferromagnetic insulator that is in contact with a metal. Spin accumulation in the metal can induce spin-transfer torques on the staggered field and on the magnetization in the antiferromagnet. These torques relate to spin pumping: the emission of spin currents into the metal by a precessing antiferromagnet. We investigate how the various components of the spin-transfer torque are affected by spin-independent disorder and spin-flip scattering in the metal. Spin-conserving disorder reduces the coupling between the spins in the antiferromagnet and the itinerant spins in the met…
Of the available classes of insulators which have been shown to contain topologically non-trivial properties one of the most important is class AII, which contains systems that possess time-reversal symmetry $T$ with $T^2=-1.$ This class has been the subject of significant attention as it encompasses non-trivial Z$_2$ topological insulators such as the quantum spin Hall (QSH) state and the 3D strong topological insulator. One of the defining properties of this system is the robustness of the state under the addition of disorder that preserves $T.$ In this letter, we explore the phase diagram o…
The unconventional (half-integer) quantum Hall effect for a single species of Dirac fermions is analyzed. We discuss possible experimental measurements of the half-integer Hall conductance $g_{xy}$ of topological insulator surface states and explain how to reconcile Laughlin's flux insertion argument with half-integer $g_{xy}$. Using a vortex state representation of Landau Level wavefunctions, we calculate current density beyond linear response, which is in particular relevant to the topological image monopole effect. As a major result, the field theory describing the localization physics of t…
We study the variable-range hopping (VRH) of bosons in an array of sites with short-range interactions and a large characteristic coordination number. The latter leads to strong quantum interference phenomena yet allows for their analytical study. We develop a functional renormalization group scheme that repeatedly eliminates high-energy sites properly renormalizing the tunnelling between the low-energy ones. Using this approach we determine the temperature and magnetic field dependence of the hopping conductivity and find a large positive magnetoresistance. With increasing magnetic field the …
The interplay among topology, disorder, and non-Hermiticity can induce some exotic topological and localization phenomena. Here we investigate this interplay in a two-dimensional non-Hermitian disordered Chern-insulator model with two typical kinds of non-Hermiticities, the nonreciprocal hopping and on-site gain-and-loss effects. The topological phase diagrams are obtained by numerically calculating two topological invariants in the real space, which are the disorder-averaged open-bulk Chern number and the generalized Bott index, respectively. We reveal that the nonreciprocal hopping (the gain…
The spectrum of massless Dirac electrons on the side surface of a three-dimensional weak topological insulator is significantly affected by whether the number of unit atomic layers constituting the sample is even or odd; it has a finite-size energy gap in the even case while it is gapless in the odd case. The conductivity of such a two-dimensional Dirac electron system with quenched disorder is calculated when the Fermi level is located at the Dirac point. It is shown that the conductivity increases with increasing disorder and shows no clear even-odd difference when the aspect ratio of the sy…
With the recent discovery of Weyl semimetals, the phenomenon of negative magnetoresistance (MR) is attracting renewed interest. While small negative MR can occur due to the suppression of spin scattering or weak localization, large negative MR is rare in materials, and when it happens, it is usually related to magnetism. The large negative MR in Weyl semimetals is peculiar in that it is unrelated to magnetism and comes from chiral anomaly. Here we report that there is a new mechanism for large negative MR which is not related to magnetism but is related to disorder. In the newly-synthesized bu…
The spectral properties of a disordered electronic system at the metal-insulator transition point are investigated numerically. A recently derived relation between the anomalous diffusion exponent $η$ and the spectral compressibility $χ$ at the mobility edge, $χ=η/2d$, is confirmed for the integer quantum Hall delocalization transition. Our calculations are performed within the framework of an unitary network-model and represent a new method to investigate spectral properties of disordered systems.
Dynamical quantum phase transitions (DQPTs) represent a counterpart in non-equilibrium quantum time evolution of thermal phase transitions at equilibrium, where real time becomes analogous to a control parameter such as temperature. In quenched quantum systems, recently the occurrence of DQPTs has been demonstrated, both with theory and experiment, to be intimately connected to changes of topological properties. Here, we contribute to broadening the systematic understanding of this relation between topology and DQPTs to multi-orbital and disordered systems. Specifically, we provide a detailed …
