We investigate disorder-driven topological phase transitions in quantized electric quadrupole insulators. We show that chiral symmetry can protect the quantization of the quadrupole moment $q_{xy}$, such that the higher-order topological invariant is well-defined even when disorder has broken all crystalline symmetries. Moreover, nonvanishing $q_{xy}$ and consequent corner modes can be induced from a trivial insulating phase by disorder that preserves chiral symmetry. The critical points of such topological phase transitions are marked by the occurrence of extended boundary states even in the presence of strong disorder. We provide a systematic characterization of these disorder-driven topological phase transitions from both bulk and boundary descriptions.
A quadrupole topological insulator, being one higher-order topological insulator with nontrivial quadrupole quantization, has been intensely investigated very recently. However, the tight-binding model proposed for such emergent topological insulators demands both positive and negative hopping coefficients, which imposes an obstacle in practical realizations. Here we introduce a feasible approach to design the sign of hopping in acoustics, and construct the first acoustic quadrupole topological insulator that stringently emulates the tight-binding model. The inherent hierarchy quadrupole topol…
Quadrupole topological insulators are a new class of topological insulators with quantized quadrupole moments, which support protected gapless corner states. The experimental demonstrations of quadrupole-topological insulators were reported in a series of artificial materials, such as photonic crystals, acoustic crystals, and electrical circuits. In all these cases, the underlying structures have discrete translational symmetry and thus are periodic. Here we experimentally realize two-dimensional aperiodic-quasicrystalline quadrupole-topological insulators by constructing them in electrical ci…
We show that topological defects in quadrupole insulators do not host quantized fractional charges, contrary to what their Wannier representation indicates. In particular, we test the charge quantization hypothesis based on the Wannier representation of a parametric defect and a disclination. Against the expectations, we find that the local charge density decays as $\sim 1/r^2$ with distance, leading to a diverging defect charge. We identify sublattice symmetry and not higher order topology as the origin of the previously reported charge quantization.
The dynamics of two-dimensional (2D) topological quadrupole insulator (TQI) and Chern insulator (CI) after the real-space configuration is transformed from a cylinder or Mobius strip to open boundary condition (OBC) and vice versa is analyzed. Similar dynamics of both models are observed, but the quadrupole corner states of the TQI makes the signatures more prominent. After the systems transform from a cylinder or Mobius strip to OBC, the occupation of the corner state of the TQI and the edge state of the CI exhibits steady-state behavior. The steady-state values depend on the ramping rate of …
Quantized bulk quadrupole moment has unveiled a nontrivial boundary state, exhibiting lower-dimensional topological edge states and simultaneously hosting the in-gap corner modes of zero dimension. All state-of-the-art strategies for topological thermal metamaterials have so far failed to observe such higher-order hierarchical features, since the absence of quantized bulk quadrupole moments in thermal diffusion fundamentally forbids the possible expansions of band topology, unlike its photonic counterpart. Here, we report a recipe of creating quantized bulk quadrupole moments in diffusion, and…
A two-dimensional quadrupole topological insulator on a square lattice is a typical example of a higher-order topological insulator. It hosts an edge state localized near each of its $90^{\circ}$ corners at an energy $E$ inside the band gap, where $E$ is set equal to zero for simplicity. Although the appearance of an edge state has been shown in simple systems with only $90^{\circ}$ corners, it is uncertain whether a similar localized state can appear at $E = 0$ near a complicated edge consisting of multiple $90^{\circ}$ and $270^{\circ}$ corners. Here, we present a numerical method to determi…
The modern theory of electric polarization has recently been extended to higher multipole moments, such as quadrupole and octupole moments. The higher electric multipole insulators are essentially topological crystalline phases protected by underlying crystalline symmetries. Henceforth, it is natural to ask what are the consequences of symmetry breaking in these higher multipole insulators. In this work, we investigate topological phases and the consequences of symmetry breaking in generalized electric quadrupole insulators. Explicitly, we generalize the Benalcazar-Bernevig-Hughes model by add…
We theoretically study the spin and charge generation along with the electron transport on a disordered surface of a doped three-dimensional topological insulator/magnetic insulator junction by using Green's function techniques. We find that the spin and charge current are induced by not only local but also nonlocal magnetization dynamics through nonmagnetic impurity scattering on the disordered surface of the doped topological insulator. We also clarify that the spin current as well as charge density are induced by spatially inhomogeneous magnetization dynamics, and the spin current diffusive…
Quadrupole topological insulator is a symmetry-protected higher-order topological phase with intriguing topology of Wannier bands, which, however, has not yet been realized in plasmonic metamaterials. Here, we propose a lattice of plasmon-polaritonic nanocavities which can realize quadrupole topological insulators by exploiting the geometry-dependent sign-reversal of the couplings between the daisy-like nanocavities. The designed system exhibits various topological and trivial phases as characterized by the nested Wannier bands and the topological quadrupole moment which can be controlled by t…
Topological behavior can be masked when disorder is present. A topological insulator, either intrinsic or interaction induced, may turn gapless when sufficiently disordered. Nevertheless, the metallic phase that emerges once a topological gap closes retains several topological characteristics. By considering the self-consistent disorder-averaged Green function of a topological insulator, we derive the condition for gaplessness. We show that the edge states survive in the gapless phase as edge resonances and that, similar to a doped topological insulator, the disordered topological metal also h…
High-order topological insulators are a recent development extending the topological theory of charge polarization to higher multipole moments. Since their theoretical proposal, several experimental realizations of high-order topological insulators have been reported. However, high order topological transitions have not been observed. In this letter, we report on the observation of a high-order topological transition in a quadrupole topological insulator implemented in an LC circuit with nonlinear couplings. This system presents the ability to confine electromagnetic energy in its corner state…
The generalized bulk-boundary correspondence predicts the existence of the chiral hinge states in three-dimensional second-order topological insulators (3DSOTIs), resulting in a quantized Hall effect in three dimensions. Chiral hinge states in Hermitian 3DSOTIs are characterized by the quantized transmission coefficients with zero fluctuations, even in the presence of disorders. Here, we show that chiral hinge transport in disordered non-Hermitian systems deviates from the paradigm of the Hermitian case. Our numerical calculations prove the robustness of hinge states of disordered non-Hermitia…
We demonstrate that HOTIs with the quantization of the quadrupole moments can be realized in the two-dimensional elastic phononic crystals (PnCs). Both one-dimensional (1D) topological edge states and zero-dimensional (0D) topological corner states are visualized and can be transformed each other by tuning the crystalline symmetry in a hierarchical structure. The systematic band structure calculations indicate that elastic wave energy in the hierarchical structure can be localized with remarkable robustness, which is very promising for new generations of integrated solid-state phononic circuit…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements in the absence of the magnetic field and observe large signal due to the edge states. It demonstrates, that the edge states can propagate over long distance 1 mm, and, therefore, there is no difference between local and non local electrical measurements in topological insulator. In the presence of the in-plane magnetic field we find strong decrease of the lo…
We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-c…
We consider a disordered topological insulator thin film placed on the top of a ferromagnetic insulator with a perpendicular exchange field $M$ and subjected to a perpendicular electric field. The presence of ferromagnetic insulator causes that bottom surface states of the topological insulator thin film become spin polarized and the electric field provides a potential difference $V$ between the two surface states, resulting in breaking of time-reversal and inversion symmetry in the system. Using Kubo formalism and employing the first Born approximation as well as the self-consistent Born appr…
We study theoretically the role of quenched magnetic disorder at the surface of a topological insulator by numerical simulation and scaling analysis. It is found that all the surface states are localized while the transverse conductivity is quantized to be $\pm {{e^2} \over {2 h}}$ as long as the Fermi energy is within the bulk gap. This greatly facilitates the realization of the topological magnetoelectric effect proposed by Qi {\it et al.} (Phys. Rev. B\textbf{78}, 195424 (2008)) with the surface magnetization direction being controlled by the simultaneous application of magnetic and electri…
In this numerical study we investigate the influence and interplay of disorder, spin-orbit coupling and magnetic field on the edge-transport in HgTe/CdTe quantum wells in the framework of coherent elastic scattering. We show that the edge states remain unaffected by the combined effect of moderate disorder and a weak magnetic field at realistic spin-orbit coupling strengths. Agreement with the experimentally observed linear magnetic field dependence for the conductance of long samples is obtained when considering the existence of charge puddles.
Impurities and defects are ubiquitous in topological insulators (TIs) and thus understanding the effects of disorder on electronic transport is important. We calculate the distribution of the random conductance fluctuations $P(G)$ of disordered 2D TI wires modeled by the Bernevig-Hughes-Zhang (BHZ) Hamiltonian with realistic parameters. As we show, the disorder drives the TIs into different regimes: metal (M), quantum spin-Hall insulator (QSHI), and ordinary insulator (OI). By varying the disorder strength and Fermi energy, we calculate analytically and numerically $P(G)$ across the entire pha…
We investigate the scattering and localization properties of edge and bulk states in a disordered two-dimensional topological insulator when they coexist at the same fermi energy. Due to edge-bulk backscattering (which is not prohibited \emph{a priori} by topology or symmetry), Anderson disorder makes the edge and bulk states localized indistinguishably. Two methods are proposed to effectively decouple them and to restore robust transport. The first kind of decouple is from long range disorder, since edge and bulk states are well separated in $k$ space. The second one is from an edge gating, o…
The quantum phase diagram of disordered wires in a strong magnetic field is studied as a function of wire width and energy. The two-terminal conductance shows zero-temperature discontinuous transitions between exactly integer plateau values and zero. In the vicinity of this transition, the chiral metal-insulator transition (CMIT), states are identified that are superpositions of edge states with opposite chirality. The bulk contribution of such states is found to decrease with increasing wire width. Based on exact diagonalization results for the eigenstates and their participation ratios, we c…
Modern theory of electric polarization is formulated by the Berry phase, which, when quantized, leads to topological phases of matter. Such a formulation has recently been extended to higher electric multipole moments, through the discovery of the so-called quadupole topological insulator. It has been established by a classical electromagnetic theory that in a two-dimensional material the quantized properties for the quadupole topological insulator should satisfy a basic relation. Here we discover a new type of quadrupole topological insulator (dubbed type-II) that violates this relation due t…
The paper proposes a self-consistent Green function description of the induced surface superconductivity in a disordered three-dimensional topological insulator (TI) coupled to an s-wave superconductor. We recover earlier results regarding the induced spin-triplet p-wave pairing, showing that a mixture of p- and s-wave pair correlations appears as a result of broken spin-rotation symmetry on the helical surface of the TI. Unlike the s-wave pairing, the p-wave component is found to be suppressed in dirty TIs in which the elastic mean-free path is much smaller than the superconducting coherence …
When the crystalline symmetries that protect a higher-order topological phase are not preserved at the boundaries of the sample, gapless hinge modes or in-gap corner states cannot be stabilized. Therefore, careful engineering of the sample termination is required. Similarly, magnetic textures, whose quantum fluctuations determine the supported magnonic excitations, tend to relax to new configurations that may also break crystalline symmetries when boundaries are introduced. Here we uncover that antiskyrmion crystals provide an experimentally accessible platform to realize a magnonic topologica…
We study low-lying electron levels in an "antidot" capturing a coreless vortex on the surface of a three-dimensional topological insulator in the presence of disorder. The surface is covered with a superconductor film with a hole of size R larger than coherence length, which induces superconductivity via proximity effect. Spectrum of electron states inside the hole is sensitive to disorder, however, topological properties of the system give rise to a robust Majorana bound state at zero energy. We calculate the subgap density of states with both energy and spatial resolution using the supersymm…
Higher-order topological insulators have been introduced in the precursory Benalcazar-Bernevig-Hughes quadrupole model, but no electronic compound has been proposed to be a quadrupole topological insulator (QTI) yet. In this work, we predict that Ta$_2M_3$Te$_5$ ($M=$ Pd, Ni) monolayers can be 2D QTIs with second-order topology due to the double-band inversion. A time-reversal-invariant system with two mirror reflections (M$_x$ and M$_y$) can be classified by Stiefel-Whitney numbers ($w_1, w_2$) due to the combined symmetry $TC_{2z}$. Using the Wilson loop method, we compute $w_1=0$ and $w_2=1…
The quadrupole topological insulator (QTI) has attracted intense studies as a prototype of symmetry-protected higher-order topological phases of matter with a quantized quadrupole moment. The realization of QTIs has been reported in various static settings with periodic structures. Here, we theoretically investigate topological phase transitions and establish the QTI phase in a periodically driven system with disorder. In the clean limit, the Floquet QTI phase emerges from a topologically trivial band structure driven by elliptically polarized irradiation. More strikingly, starting from a pure…
The modern theory of charge polarization in solids is based on a generalization of Berry's phase. Its possible quantization lies at the heart of our understanding of all systems with topological band structures that were discovered over the last decades. While based on the concept of the "charge" polarization, the same theory can be used as an elegant tool to characterize the Bloch bands of neutral bosonic systems such as photonic or phononic crystals. Recently, the theory of this quantized polarization was extended from the dipole- to higher multipole-moments. In particular, a two-dimensional…
A direct signature of electron transport at the metallic surface of a topological insulator is the Aharonov-Bohm oscillation observed in a recent study of Bi_2Se_3 nanowires [Peng et al., Nature Mater. 9, 225 (2010)] where conductance was found to oscillate as a function of magnetic flux $ϕ$ through the wire, with a period of one flux quantum $ϕ_0=h/e$ and maximum conductance at zero flux. This seemingly agrees neither with diffusive theory, which would predict a period of half a flux quantum, nor with ballistic theory, which in the simplest form predicts a period of $ϕ_0$ but a minimum at zer…
The modern theory of electric polarization in crystals associates the dipole moment of an insulator with a Berry phase of its electronic ground state [1, 2]. This concept constituted a breakthrough that not only solved the long-standing puzzle of how to calculate dipole moments in crystals, but also lies at the core of the theory of topological band structures in insulators and superconductors, including the quantum anomalous Hall insulator [3, 4] and the quantum spin Hall insulator [5-7], as well as quantized adiabatic pumping processes [8-10]. A recent theoretical proposal extended the Berry…
The Landauer "residual resistivity dipole" is a well-known concept in electron transport through a disordered medium. It is formed when a defect/scatterer reflects an impinging electron causing negative charges to build up on one side of the scatterer and positive charges on the other. This results in the formation of a microscopic electric dipole that affects the resistivity of the medium. Here, we show that an equivalent entity forms in spin polarized electron transport through the surface of a disordered topological insulator (TI). When electrons reflect from a scatterer on the TI surface, …
The chiral hinge modes are the key feature of a second order topological insulator in three dimensions. Here we propose a quadrupole index in combination of a slab Chern number in the bulk to characterize the flowing pattern of chiral hinge modes along the hinges at the intersection of the surfaces of a sample. We further utilize the topological field theory to demonstrate the correspondent connection of the chiral hinge modes to the quadrupole index and the slab Chern number, and present a picture of three-dimensional quantum anomalous Hall effect as a consequence of chiral hinge modes. The t…
Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in large-band-gap insulators. Here we report how such negative-$U$ centers are responsible for widespread insulator-to-metal transitions in amorphous HfO$_2$ and Al$_2$O$_3$ thin films with a 10$^9$-fold resistance drop. Triggered by a static hydraulic pressure or a 0.1 ps impulse of magnetic pressure, the transition can proceed at such low pressure that there …
A global phase diagram of disordered weak and strong topological insulators is established numerically. As expected, the location of the phase boundaries is renormalized by disorder, a feature recognized in the study of the so-called topological Anderson insulator. Here, we report unexpected quantization, i.e., robustness against disorder of the conductance peaks on these phase boundaries. Another highlight of the work is on the emergence of two subregions in the weak topological insulator phase under disorder. According to the size dependence of the conductance, the surface states are either …
It is believed, that a disordered one-dimensional (1D) wire with coherent electronic conduction is an insulator with the mean resistance <ρ> \simeq e^{2L/ξ} and resistance dispersion Δ_ρ \simeq e^{L/ξ}, where L is the wire length and ξis the electron localisation length. Here we show that this 1D insulator undergoes at full coherence the crossover to a 1D "metal", caused by thermal smearing and resonant tunnelling. As a result, Δ_ρ is smaller than unity and tends to be L/ξ- independent, while <ρ> grows with L/ξfirst nearly linearly and then polynomially, manifesting the so-called medium locali…
The axion insulator is a higher-order topological insulator protected by inversion symmetry. We show that under quenched disorder respecting inversion symmetry {\it on average}, the topology of the axion insulator stays robust, and an intermediate metallic phase in which states are delocalized is unavoidable at the transition from an axion insulator to a trivial insulator. We derive this conclusion from general arguments, from classical percolation theory, and from the numerical study of a 3D quantum network model simulating a disordered axion insulator through a layer construction. We find th…
The role of disorder in the field of three-dimensional time reversal invariant topological insulators has become an active field of research recently. However, the computation of Z2 invariants for large, disordered systems still poses a considerable challenge. In this paper we apply and extend a recently proposed method based on the scattering matrix approach, which allows the study of large systems at reasonable computational effort with few-channel leads. By computing the Z2 invariant directly for the disordered topological Anderson insulator, we unambiguously identify the topological nature…
In this Letter, we study an Anderson-localization-induced quantized transport in disordered Chern insulators (CIs). By investigating the disordered CIs with a step potential, we find that the chiral interface states emerge along the interfaces of the step potential, and the energy range for such quantized transport can be manipulated through the potential strength. Furthermore, numerical simulations on cases with a multi-step potential demonstrate that such chiral state can be spatially shifted by varying the Fermi energy, and the energy window for quantized transport is greatly enlarged. Expe…
Enhancement of the dielectric response of insulators by disorder is theoretically proposed, where the quantum interference of electronic waves through the nanoscale/mesoscopic system and its change due to external perturbations control the polarization. In the disordered case with all the states being localized, the resonant tunneling, which is topologically protected, plays a crucial role, and enhances the dielectric response by a factor 30~40 compared with the pure case. Realization of this idea with accessible materials/structures is also discussed.
The disorder-driven metal-insulator transition in the quantum spin Hall systems is studied by scaling analysis of the Thouless conductance $g$. Below a critical disorder strength, the conductance is independent of the sample size $M$, an indication of critically delocalized electron states. The calculated beta function $β=d\ln g/d\ln M$ indicates that the metal-insulator transition is Kosterlitz-Thouless (KT) type, which is characterized by bounding and unbounding of vortex-antivortex pairs of the local currents. The KT like metal-insulator transition is a basic characteristic of the quantum s…
We investigate a disordered two-dimensional lattice model for noninteracting electrons with long-range power-law transfer terms and apply the method of level statistics for the calculation of the critical properties. The eigenvalues used are obtained numerically by direct diagonalization. We find a metal-insulator transition for a system with orthogonal symmetry. The exponent governing the divergence of the correlation length at the transition is extracted from a finite size scaling analysis and found to be $ν=2.6\pm 0.15$. The critical eigenstates are also analyzed and the distribution of the…
Spin transport through magnetic insulators via magnons has recently been explored for a growing variety of magnetic systems with long-range order and well-understood spin excitation spectra. Here we show dramatic effects of spin transport through an amorphous magnetic insulator, which is both magnetically and structurally disordered. We generate and detect spin flow though amorphous yttrium-iron-garnet ($a$-YIG) thin films in a non-local geometry by use of the spin Hall and inverse spin Hall effects in platinum strips separated by 10 or more microns. By comparing non-local spin transport in $a…
In disordered two dimensional Chern insulators, a single bulk extended mode is predicted to exist per band, up to a critical disorder strength; all the other bulk modes are localized. This behavior contrasts strongly with topologically trivial two-dimensional phases, whose modes all become localized in the presence of disorder. Using a tight-binding model of a realistic photonic Chern insulator, we show that delocalized bulk eigenstates can be observed in an experimentally realistic setting. This requires the selective use of resonator losses to suppress topological edge states, and acquiring …
In magnetically doped thin-film topological insulators, aligning the magnetic moments generates a quantum anomalous Hall phase supporting a single chiral edge state. We show that as the system de-magnetizes, disorder from randomly oriented magnetic moments can produce a `quantum anomalous parity Hall' phase with \emph{helical} edge modes protected by a unitary reflection symmetry. We further show that introducing superconductivity, combined with selective breaking of reflection symmetry by a gate, allows for creation and manipulation of Majorana zero modes via purely electrical means and at ze…
We study disorder effects in a two-dimensional system with chiral symmetry and find that disorder can induce a quadrupole topological insulating phase (a higher-order topological phase with quadrupole moments) from a topologically trivial phase. Their topological properties manifest in a topological invariant defined based on effective boundary Hamiltonians, the quadrupole moment, and zero-energy corner modes. We find gapped and gapless topological phases and a Griffiths regime. In the gapless topological phase, all the states are localized, while in the Griffiths regime, the states at zero en…
We study the construction of programable integrated circuits with the help of disordered Chern insulators (CIs) in this letter. Specifically, the schemes for low dissipation logic devices and connecting wires are proposed. We use the external-gate-induced step voltage to construct spatially adjustable channels, where these channels take the place of the conventional wires. Our numerical calculation manifests that the external gates can be adopted to program the arbitrary number of wires ($n$-to-$m$ connections). We find that their electron transport is dissipationless and robust against gate v…
A higher-order topological insulator is a new concept of topological states of matter, which is characterized by the emergent boundary states whose dimensionality is lower by more than two compared with that of the bulk, and draws a considerable interest. Yet, its robustness against disorders is still unclear. Here we investigate a phase diagram of higher-order topological insulator phases in a breathing kagome model in the presence of disorders, by using a state-of-the-art machine learning technique. We find that the corner states survive against the finite strength of disorder potential as l…
In two dimensions chaotic level-statistics is expected for massless Dirac fermions in the presence of disorder. For weakly disordered graphene flakes with zigzag edges the obtained level-spacing distribution in the Dirac region is neither chaotic (Wigner) nor localized (Poisson) but similar to that at the critical point of the Anderson metal-insulator transition. The quantum transport in finite graphene can occur via critical edge states as in topological insulators, for strong disorder the Dirac region vanishes and graphene behaves as ordinary Anderson insulator.
