arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2212.06010cond-mat.mes-hallcond-mat.dis-nn
收藏

无序陈绝缘体的拓扑量子临界性

Topological quantum criticality of the disordered Chern insulator

Mateo Moreno-Gonzalez, Johannes Dieplinger, Alexander Altland

AI总结:

该研究针对二维无序拓扑陈绝缘体,提出了弱无序下识别临界态的几何判据并解析推广至强无序区,绘制出能量、拓扑参数与无序强度相空间中的临界曲面,辅以数值分析验证了临界态位置与多重分形性质。

摘要:

我们研究了存在静态无序的二维拓扑陈绝缘体(Chern insulator)。该系统中的一般量子态均为安德森局域态,但拓扑性质要求存在一类局域长度发散的临界态子集——这是量子霍尔绝缘体中“朗道带中心态”的陈绝缘体类比。我们讨论了弱无序下识别这类态的几何判据,以及通过解析方法将其推广到强无序区域的方案。据此,我们绘制出嵌入在由能量、拓扑控制参数和无序强度张成的相空间中的临界曲面。我们还通过对临界态位置及其多重分形性质的数值分析,补充验证了解析预测结果。

英文摘要:

We consider the two-dimensional topological Chern insulator in the presence of static disorder. Generic quantum states in this system are Anderson localized. However, topology requires the presence of a subset of critical states, with diverging localization length (the Chern insulator analog of the `center of the Landau band states' of the quantum Hall insulator.) We discuss geometric criteria for the identification of these states at weak disorder, and their extension into the regime of strong disorder by analytical methods. In this way, we chart a critical surface embedded in a phase space spanned by energy, topological control parameter, and disorder strength. Our analytical predictions are supplemented by a numerical analysis of the position of the critical states, and their multifractal properties.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑