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arXiv 2602.15465cond-mat.mtrl-scicond-mat.mes-hall
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静水压增强的关联磁性和陈绝缘体在莫尔WSe2中

Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2

State Key Laboratory of Micro-nano Engineering Science, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University(上海交通大学物理与天文学院微纳工程科学国家重点实验室人工结构量子控制教育部重点实验室);Tsung-Dao Lee Institute, Shanghai Jiao Tong University(上海交通大学李政道研究所);Center for High Pressure Science & Technology Advanced Research (HPSTAR)(高压科学与技术前沿研究中心);Max Planck Institute for Chemical Physics of Solids(马克斯·普朗克固体化学物理研究所);Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments, Institute for Shanghai Advanced Research in Physical Sciences(上海极端环境材料前沿研究重点实验室上海物理科学研究院);Zhiyuan College, Shanghai Jiaotong University(上海交通大学致远学院);Research Center for Electronic and Optical Materials, National Institute for Materials Science(国立材料研究所电子与光学材料研究中心);Research Center for Materials Nanoarchitectonics, National Institute for Materials Science(国立材料研究所材料纳米架构研究中心);Hefei National Laboratory(合肥国家实验室);Shanghai Research Center for Quantum Sciences(上海量子科学研究与创新中心);Department of Physics and Astronomy, University of Tennessee, Knoxville(田纳西大学诺克斯维尔分校物理与天文系);Department of Physics, National University of Singapore(新加坡国立大学物理系)
Pengfei Jiao, Chenghao Qian, Ning Mao, Xumin Chang, Jiayong Xiao, Feng Liu, Shaozheng Wang, Xiaokai Wu, Di Peng, Cheng Xu, Hongliang Dong, Yuchen Zheng, Juncai … 展开作者

Pengfei Jiao, Chenghao Qian, Ning Mao, Xumin Chang, Jiayong Xiao, Feng Liu, Shaozheng Wang, Xiaokai Wu, Di Peng, Cheng Xu, Hongliang Dong, Yuchen Zheng, Juncai Wu, Tong Zheng, Kenji Watanabe, Takashi Taniguchi, Jinfeng Jia, Xiaoxue Liu, Zhiwen Shi, Shiyong Wang, Guorui Chen, Tingxin Li, Ruidan Zhong, Yang Zhang, Dong Qian, Zhiqiang Chen, Shengwei Jiang

AI总结:

静水压增强扭曲双层WSe2中的关联磁性和陈绝缘体,通过调节莫尔势能和拓扑相变实现新的物态控制。

摘要:

莫尔半导体提供了平坦带,其中库仑相互作用和能带拓扑交织在一起,而层间耦合在形成莫尔势能中起着核心作用。然而,有限的层间耦合强度和缺乏有效的调节方法阻碍了进一步探索莫尔半导体中的关联现象。在这里,我们介绍了一种使用氦作为压力介质的低温双栅钻石压机平台,使在扭曲双层WSe2中能够实现可逆的静水压调节以及磁光谱学。压力增强了莫尔势能,红移激子,并在3.1度的扭曲下稳定了原本不存在的Stoner铁磁性。同时,填充的C=1陈绝缘体状态增强,表现出饱和场的降低。此外,我们观察到在约2 GPa时发生从陈绝缘体到莫特绝缘体的拓扑相变。第一性原理计算揭示,Gamma到K价带最大值的切换驱动了这一转变,通过将Ising-like拓扑K谷子带转化为一个自旋退简化的Gamma子带。我们的发现证明了静水压作为在莫尔材料中关联磁性和拓扑能带工程的强大、连续控制轴。

英文摘要:

Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. However, limited interlayer coupling strength and the lack of efficient tuning methods hinder further exploration of correlated phenomena in moiré semiconductors. Here we introduce a cryogenic dual-gated diamond-anvil platform using helium as a pressure medium, enabling reversible hydrostatic tuning together with magneto-optical spectroscopy in twisted bilayer WSe2. Pressure enhances the moiré potential, redshifts excitons, and stabilizes Stoner ferromagnetism otherwise absent at a 3.1-degree twist. Simultaneously, the half-filled C = 1 Chern insulating state strengthens, exhibiting a reduced saturation field. Moreover, we observe a topological phase transition from a Chern insulator to a Mott insulator at around 2 GPa. First-principles calculations reveal that a Gamma-to-K valence-band-maximum switching drives this transition by converting an Ising-like topological K-valley miniband into a spin-degenerate trivial Gamma miniband. Our findings demonstrate hydrostatic pressure as a powerful, continuous control axis for correlated magnetism and topological band engineering in moiré materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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