arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2006.11258cond-mat.str-elcond-mat.mtrl-sci
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UCr $_{2}$ Si $_2$:hydrostatic pressure的结构相变和反铁磁相变的调谐及化学取代

Tuning the structural and antiferromagnetic phase transitions in UCr$_{2}$Si$_2$: hydrostatic pressure and chemical substitution

Y. Lai, K. Wei, G. Chappell, J. Diaz, T. Siegrist, P. J. W. Moll, D. Graf, R. E. Baumbach

摘要:

$f$ -电子材料中的结构相变由于实际和基础科学原因而吸引了持续的关注,包括它们提供了直接研究结构和$f$ -状态之间关系的环境。在这里,我们提出的结果UCr $_2$硅$_2$,其中结构(四重$\rightarrow$单斜)和反铁磁相变被认为是在$T_{\rm{S}}$ $=$ 205 K和$T_{\rm{N}}$ $=$ 25 K,分别。我们还提供了在$T_{\rm{X}}$ = 280 K时额外的二级相变的证据。我们发现,$T_{\rm{X}}$,$T_{\rm{S}}$,和$T_{\rm{N}}$响应以不同的方式应用的静水压力和Cr $\rightarrow$ Ru化学取代。特别是,流体静力学压缩提高了结构有序温度,最终导致它与$T_{\rm{X}}$合并并破坏反铁磁性。相比之下,UCr $_{2-x}$ Ru $_x$ Si $_2$系列中的化学取代抑制了$T_{\rm{S}}$和$T_{\rm{N}}$两者,使它们分别在$x$ $\approx$ 0.16和0.08附近接近零温度。不同的$T-P$和$T-x$相图与刚性Cr-Si和Si-Si亚结构的演化有关,其中施加的压力半均匀地压缩晶胞,并且Cr $\rightarrow$ Ru取代导致沿四重$c$ -轴的单轴晶格压缩和在$ab$ -平面中的膨胀。这些结果提供了一个有趣的一类强相关的量子材料,其中与$f$ -电子磁性,强电子相关性,结构不稳定性的自由度很容易控制的见解。

英文摘要:

Structural phase transitions in $f$-electron materials have attracted sustained attention both for practical and basic science reasons, including that they offer an environment to directly investigate relationships between structure and the $f$-state. Here we present results for UCr$_2$Si$_2$, where structural (tetragonal $\rightarrow$ monoclinic) and antiferromagnetic phase transitions are seen at $T_{\rm{S}}$ $=$ 205 K and $T_{\rm{N}}$ $=$ 25 K, respectively. We also provide evidence for an additional second order phase transition at $T_{\rm{X}}$ = 280 K. We show that $T_{\rm{X}}$, $T_{\rm{S}}$, and $T_{\rm{N}}$ respond in distinct ways to the application of hydrostatic pressure and Cr $\rightarrow$ Ru chemical substitution. In particular, hydrostatic compression increases the structural ordering temperature, eventually causes it to merge with $T_{\rm{X}}$ and destroys the antiferromagnetism. In contrast, chemical substitution in the series UCr$_{2-x}$Ru$_x$Si$_2$ suppresses both $T_{\rm{S}}$ and $T_{\rm{N}}$, causing them to approach zero temperature near $x$ $\approx$ 0.16 and 0.08, respectively. The distinct $T-P$ and $T-x$ phase diagrams are related to the evolution of the rigid Cr-Si and Si-Si substructures, where applied pressure semi-uniformly compresses the unit cell and Cr $\rightarrow$ Ru substitution results in uniaxial lattice compression along the tetragonal $c$-axis and an expansion in the $ab$-plane. These results provide insights into an interesting class of strongly correlated quantum materials where degrees of freedom associated with $f$-electron magnetism, strong electronic correlations, and structural instabilities are readily controlled.

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