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arXiv 1004.3669cond-mat.str-elcond-mat.mtrl-sci
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压力对电子掺杂锰氧化物CaMn $_{1-x}$ Sb $_{x}$ O $_{3}$磁性、输运和热输运性质的影响

Effect of pressure on the magnetic, transport, and thermal-transport properties of the electron-doped manganite CaMn$_{1-x}$Sb$_{x}$O$_{3}$

Y. Murano, M. Matsukawa, S. Kobayashi, S. Nimori, R. Suryanarayanan, K. Koyama, N. Kobayashi

摘要:

本文研究了流体静压对电子掺杂锰氧化物CaMn $_{1-x}$ Sb $_{x}$ O $_{3}$的磁性、输运性质和热输运性质的影响。Sb $^{5+}$离子取代母体基质的Mn $^{4+}$位点导致具有化学式CaMn $^{4+}_{1-2x}$ Mn $^{3+}_{x}$ Sb $^{5+}_{x}$ O $_{3}$的单电子掺杂,伴随着作为$x$的函数的晶胞体积的单调增加。随着Sb掺杂量的增加,电阻率和负塞贝克系数的大小在高温下都受到抑制,这表明电子掺杂。在$x=0.05$和0.08处的异常抗磁行为在场冷直流磁化中被清楚地观察到。流体静压对直流磁化强度的影响与Sb掺杂的化学压力效应相反。交流磁化率测量的动力学效应指向嵌入倾斜AFM基体中的磁阻挫团簇如FM团簇的形成。

英文摘要:

We have demonstrated the effect of hydrostatic pressure on magnetic and transport properties, and thermal transport properties in electron-doped manganites CaMn$_{1-x}$Sb$_{x}$O$_{3}$. The substitution of Sb$^{5+}$ ion for Mn $^{4+}$site of the parent matrix causes one-electron doping with the chemical formula CaMn$^{4+}_{1-2x}$Mn$^{3+}_{x}$Sb$^{5+}_{x}$O$_{3}$ accompanied by a monotonous increase in unit cell volume as a function of $x$. Upon increasing the doping level of Sb, the magnitudes of both electrical resistivity and negative Seebeck coefficient are suppressed at high temperatures, indicating the electron doping. Anomalous diamagnetic behaviors at $x=0.05$ and 0.08 are clearly observed in field cooled dc magnetization. The effect of hydrostatic pressure on dc magnetization is in contrast to the chemical pressure effect due to Sb doping. The dynamical effect of ac magnetic susceptibility measurement points to the formation of the magnetically frustrated clusters such as FM clusters embedded in canted AFM matrix.

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