We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition where a high level of compensation is achieved, the resistivity exceeds 0.5 Ohmcm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.
Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar doping, however, has been a major challenge for UWBG materials as dopant ionization energy and charge compensation generally increase with increasing band gap and significantly limit the semiconductor devices that can currently be realized. Using hybrid density functional theory, we demonstrate rutile germanium oxide (r-GeO2) to be an alternative UWBG (4.68 eV) material that can be ambipolarly doped. We identify SbGe, AsGe…
p-type doping from the dielectric/semiconductor interface of a SnO2 thin film transistor (TFT) has been utilized to develop high carrier mobility balanced ambipolar oxide-transistor. To introduce this interfacial-doping, bottom-gate top-contact TFTs have been fabricated by using two different ion-conducting oxide dielectrics which contain trivalent atoms. These ion-conducting dielectrics are LilnO2 and LiGaO2 respectively, containing mobile Li+ ion. During SnO2 thin film fabrication on top of the ionic dielectric, those trivalent atoms allow p- doping to the interfacial SnO2 layer to introduce…
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep- UV optoelectronics. These advances can be accomplis…
Investigations on II-Sn-N2 (II = Mg, Ca) have been started very recently compared to the intense research of the Zn-IV-N2 (IV = Si, Ge, Sn). In this work, we perform a comprehensive study of cation disorder in stoichiometric MgSnN2 and crystal structure characteristic, doping behavior of off-stoichiometric Mg1+xSn1-xN2 (x = -0.8, -0.6, -0.5, -0.4, -0.2, 0.2, 0.4, 0.5, 0.6, 0.8) by using the cluster expansion method and first principles calculations. It is found that cation disorder in stoichiometric MgSnN2 induces a band gap reduction because of a violation of the octet rule. Moreover, the loc…
Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3
拓扑绝缘体代表了量子物质的一种新状态，对基础物理和技术应用（如自旋电子学和量子信息处理）都有吸引力。在拓扑绝缘体中，体能隙被自旋-动量锁定的表面态穿过，形成具有独特电子性质的奇数个表面带。然而，输运测量通常由来自晶体缺陷或环境掺杂的残留体载流子主导，其掩盖了拓扑表面贡献。在这里，我们证明（BixSb 1-x）2 Te 3作为一个可调的拓扑绝缘体系统，通过改变Bi/Sb的组成比来操纵体电导率。通过角分辨光电子能谱（ARPES）测量和从头计算，证实了（BixSb 1-x）2 Te 3在整个组成范围内都是拓扑绝缘体。此外，我们观察到一个明确的双极门控效应类似于在石墨烯中观察到的（BixSb 1-x）2 Te 3的场效应晶体管（FET）器件中使用纳米片。本研究中展示的拓扑绝缘体纳米结构中载流子类型和浓度的操纵为拓扑绝缘体在纳米电子学和自旋电子学中的实现铺平了道路。
Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined effects of which are sometimes studied within the same sample. Most often, the result is limited to a shift of the SC dome to different doping values. In a few cases, the maximum SC transition at optimal doping can also be enhanced. In this work, we study the combination of charge doping together with isovalent P substitution and strain by performing ionic gating experiments on BaFe$_2$(As$_{0.8}$P$_{0.2}$)$_2$ ultra…
The disentanglement of single and many particle properties in 2D semiconductors and their dependencies on high carrier concentration is challenging to experimentally study by pure optical means. We establish an electrolyte gated WS2 monolayer field-effect structure capable to shift the Fermi level from the valence into the conduction band suitable to optically trace exciton binding as well as the single particle band gap energies in the weakly doped regime. Combined spectroscopic imaging ellipsometry and photoluminescence spectroscopies spanning large n- and p-type doping with charge carrier d…
We have investigated the THz range magneto-optical response of ultralow carrier density films of Sb$_2$Te$_3$ using time-domain THz polarimetry. Undoped Sb$_2$Te$_3$ has a chemical potential that lies inside the bulk valence band. Thus its topological response is masked by bulk carriers. However, with appropriate buffer layer engineering and chemical doping, Sb$_2$Te$_3$ thin films can be grown with extremely low electron or hole densities. The ultralow carrier density samples show unusual optical properties and quantized response in the presence of magnetic fields. Consistent with the expecta…
Epitaxial strain has been shown to drive structural phase transitions along with novel functionalities in perovskite-based thin-films. Aliovalent doping at the A-site can drive an insulator-to-metal and magnetic transitions in perovskites along with a variety of interesting structural and electronic phenomena. Using first-principles calculations, we demonstrate here, how coupling epitaxial strain with A-site hole doping in a multiferroic double perovskite, Bi2FeCrO6, could lead to mitigation of issues related to anti-site defects and lowered magnetisation in thin-films of the material. We also…
In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment.
We study magnetotransport in a rare earth doped topological insulator, Sm0.1Sb1.9Te3 single crystals, under magnetic fields up to 14 T. It is found that that the crystals exhibit Shubnikov de Haas oscillations in their magneto-transport behaviour at low temperatures and high magnetic fields. The SdH oscillations result from the mixed contributions of bulk and surface states. We also investigate the SdH oscillations in different orientations of the magnetic field, which reveals a three dimensional Fermi surface topology. By fitting the oscillatory resistance with the Lifshitz Kosevich theory, w…
Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were sporadically recorded in different materials without noting the mechanism: electron doping was observed to cause a portion of the lowest unoccupied band to merge into the valance band, leading to a decrease in conductivity. This behavior we dub as 'anti-doping' was seen in rare-earth nickel oxides SmNiO3, cobalt oxides SrCoO2.5, Li-ion battery materials and e…
We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 °C in an Argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterizations and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the…
Although vanadium dioxide (VO2) exhibits the most abrupt metal to insulator transition (MIT) properties near room-temperature, the present regulation of their MIT functionalities is insufficient owing to the high complexity and susception associated with V4+. Herein, we demonstrate a spark plasma assisted reactive sintering (SPARS) approach to simultaneously achieve in situ doping and sintering of VO2 within largely short period (~10 minutes). This enables high convenience and flexibility in regulating the electronic structure of VO2 via dopant elements covering Ti, W, Nb, Mo, Cr and Fe, leadi…
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here we demonstrate that thin films of the prototypical Mott insulator LaTiO$_3$ grown by pulsed laser deposition under oxygen atmosphere are…
Ambipolar surface state transport in non-metallic stoichiometric Bi$_2$Se$_3$ crystals
在Bi $_2$ Se $_3$中实现真正的体绝缘行为，具有简单的单能带电子结构和相当大的带隙的原型拓扑绝缘体，已经被由硒空位引起的众所周知的自掺杂效应所禁止，硒空位的额外电子将化学势移动到体导带中。我们报道了一种新的合成方法，用于实现化学计量比的Bi $_2$ Se $_3$晶体，其在电输运中表现出非金属行为下降到低温。霍尔效应测量表明存在电子和空穴类载流子，后者确定与表面态传导和实现双极运输散装Bi $_2$ Se $_3$晶体没有门控技术。随着载流子迁移率超过最高值尚未报道的拓扑表面状态在这种材料中，通过向上能带弯曲的双极传输的实现被发现提供了一个关键的方法，以提高这种材料的潜力，为未来的研究和应用。
Structural, resistivity, thermoelectric power and magneto-transport properties of Cu doped Bi2Te3 topological insulators have been investigated. The occurrence of the tuning of charge carriers from n type to p type by Cu doping at Te sites of Bi2Te3 is observed both from Hall effect and thermoelectric power measurements. Carrier mobility decreases with the doping of Cu which provides evidence of the movement of Fermi level from bulk conduction band to the bulk valence band. Thermoelectric power also increaseswith doping of Cu.Moreover linear magnetoresistance (LMR) has been observed at high ma…
MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, we show by density functional theory calculations that the strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defect BiMn in MnBi2Te4…
Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
拓扑绝缘体（TI）的出现促使人们在各种衬底上生长TI薄膜。然而，人们对拓扑表面态（TSS）对来自基底的失调和其他有害影响的鲁棒性知之甚少。在这里，我们报告观察到一个定义良好的TSS Bi 2Se 3薄膜上生长的非晶SiO2（a-SiO2）衬底和一个大的门控效应，这些薄膜使用下面的掺杂硅衬底作为背栅。a-SiO2上的薄膜由c轴有序但无规的面内畴组成。然而，尽管由非晶衬底引起的面内随机性，这些膜的输运性质优于在单晶Si（111）衬底上生长的类似膜的输运性质，单晶Si（111）衬底在结构上更好地匹配，但与膜具有化学反应性。这项工作揭示了化学相容性的重要性，相比晶格匹配，为TI薄膜的生长，也表明，技术上重要的和gatable a-SiO2/Si衬底是一个有前途的平台，TI薄膜。
We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the polarized charges from doped hydrogens play an important role. These charges gradually occupy V3d-O2p hybridized orbitals and consequently modulate the filling of the VO2 crystal conduction band-edge states, which eventually evolve into new valence band-edge states. This demonstrates the exceptional sensitivity of VO2 electronic properties to electron conce…
Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2
Harbin Institute of Technology, Shenzhen（哈尔滨工业大学（深圳））；Minjiang University（闽江大学）；Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area（粤港澳大湾区量子科学中心）；University of Science and Technology Beijing（北京科技大学）；Helmholtz-Zentrum Dresden – Rossendorf（德累斯顿罗森多夫亥姆霍兹中心）；University of Science and Technology of China（中国科学技术大学）；Soochow University（苏州大学）；National Yang Ming Chiao Tung University（国立阳明交通大学）；Indian Institute of Science（印度科学学院）；The School of Integrated Circuit, Harbin Institute of Technology, Shenzhen（哈尔滨工业大学（深圳）集成电路学院）；Max-Planck Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；National Synchrotron Radiation Research Center（国家同步辐射研究中心）；Nanyang Technological University（南洋理工大学）
Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room-temperature. Although disorder alone could be ruled out as a cau…
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ doping level). At 6K, a long-distance tail appears in the luminescence spatial profile, indicative of charge and spin transport, only limited by the length of the NW. This tail is independent on excitation power and temperature. Using a self-consistent calculation based on the drift-diffusion and Poisson equations as well as on photocarrier statistics (Van Roosbroeck model), it is found that this tail is due to photocarrier d…
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$, but only nitrogen-doped Sb$_2$Te$_3…
Metal-ion doping can effectively regulate the metal-insulator transition temperature in $\mathrm{VO}_2$. Experiments found that the pentavalent and hexavalent ion doping dramatically reduces the transition temperature while the trivalent ion doping increases the transition temperature and induces intermediate phases. Based on the phase-field model of the metal-insulator transition in $\mathrm{VO}_2$ we developed previously, we formulate a Landau potential of the metal-ion-doped $\mathrm{VO}_2$ taking account of the effects of doping on the electron correlation and lattice structure. The effect…
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to t…
Optimal doping and entropic origin of giant thermopower in doped Mott insulators
这篇论文已被作者撤回，因为结果是不正确的，由于使用的杂质求解器，在大的相互作用强度和以上的半填充失败。这首先导致了新的杂质求解器的开发（arXiv：1202.5814或Phys.Rev. B 86，085133（2012）），其次导致了具有不同结论的热电势结果的完全修订。因此，提交了一篇关于热电的新论文（arXiv：1209.4349），并撤回了目前的论文。
Innovations in imaging technology involves finding strategies and materials suitable for detection applications over the entire infrared range. Herein, we propose a new design concept based on the unique feature of an excitonic insulator, namely, negative exciton transition energy ($E_t$). We demonstrate this concept using first-principles $GW$-BSE calculations on one-dimensional organometallic wire (CrBz)$_\infty$. The pristine (CrBz)$_\infty$ exhibits an excitonic instability due to a negative $E_t$ for the lowest exciton. Substitutional doping can continuously tune the $E_t$ from $\sim$0 to…
The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron doping using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole tha…
The observation of helical surface states in Bi-based three-dimensional topological insulators has been a challenge since their theoretical prediction. The main issue raises when the Fermi level shifts deep into the bulk conduction band due to the unintentional doping. This results in a metallic conduction of the bulk which dominates the transport measurements and hinders the probing of the surface states in these experiments. In this study, we investigate various strategies to reduce the residual doping in Bi-based topological insulators. Flakes of Bi$_2$Se$_3$ and Bi$_{1.5}$Sb$_{0.5}$Te$_{1.…
Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott transition in Sr1-xLaxCuO2+y cuprate films that cover the entire electron- and hole-doped regimes. Tunneling conductance measurements directly on the cooper-oxide (CuO2) planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring atomic-scale electronic …
