（BixSb1-x）2 Te 3拓扑绝缘体纳米片的双极场效应
Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3
摘要：
拓扑绝缘体代表了量子物质的一种新状态，对基础物理和技术应用（如自旋电子学和量子信息处理）都有吸引力。在拓扑绝缘体中，体能隙被自旋-动量锁定的表面态穿过，形成具有独特电子性质的奇数个表面带。然而，输运测量通常由来自晶体缺陷或环境掺杂的残留体载流子主导，其掩盖了拓扑表面贡献。在这里，我们证明（BixSb 1-x）2 Te 3作为一个可调的拓扑绝缘体系统，通过改变Bi/Sb的组成比来操纵体电导率。通过角分辨光电子能谱（ARPES）测量和从头计算，证实了（BixSb 1-x）2 Te 3在整个组成范围内都是拓扑绝缘体。此外，我们观察到一个明确的双极门控效应类似于在石墨烯中观察到的（BixSb 1-x）2 Te 3的场效应晶体管（FET）器件中使用纳米片。本研究中展示的拓扑绝缘体纳米结构中载流子类型和浓度的操纵为拓扑绝缘体在纳米电子学和自旋电子学中的实现铺平了道路。
英文摘要：
Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurements have often been dominated by residual bulk carriers from crystal defects or environmental doping which mask the topological surface contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological insulator system to manipulate bulk conductivity by varying the Bi/Sb composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as topological insulators for the entire composition range by angle resolved photoemission spectroscopy (ARPES) measurements and ab initio calculations. Additionally, we observe a clear ambipolar gating effect similar to that observed in graphene using nanoplates of (BixSb1-x)2Te3 in field-effect-transistor (FET) devices. The manipulation of carrier type and concentration in topological insulator nanostructures demonstrated in this study paves the way for implementation of topological insulators in nanoelectronics and spintronics.
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