Innovations in imaging technology involves finding strategies and materials suitable for detection applications over the entire infrared range. Herein, we propose a new design concept based on the unique feature of an excitonic insulator, namely, negative exciton transition energy ($E_t$). We demonstrate this concept using first-principles $GW$-BSE calculations on one-dimensional organometallic wire (CrBz)$_\infty$. The pristine (CrBz)$_\infty$ exhibits an excitonic instability due to a negative $E_t$ for the lowest exciton. Substitutional doping can continuously tune the $E_t$ from $\sim$0 to $\sim$0.6 eV, which shows the ability of photon detection from terahertz to near-infrared. This type of detectors have advantages of outstanding wavelength selectivity, reduced thermal disturbance and elevated working temperature. Our work not only adds another member in the family of rare one-dimensional excitonic insulators, but also opens a new avenue for the development of high-performance infrared photodetectors in the future.
Oxygen plasma is a widely used treatment to change the surface properties of organic layers. This treatment is particularly interesting to enable the deposition from solution of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) on top of the active layer of organic solar cells or photodetectors. However, oxygen is known to be detrimental to organic devices, as the active layer is very sensitive to oxygen and photo-oxidation. In this study, we aim to determine the impact of oxygen plasma surface treatment on the performance of organic photodetectors (OPD). We show a significan…
Because of the reduced dielectric screening and enhanced Coulomb interactions, two-dimensional (2D) materials like phosphorene and transition metal dichalcogenides (TMDs) exhibit strong excitonic effects, resulting in fascinating many-particle phenomena covering both intralayer and interlayer excitons. Their intrinsic bandgaps and strong excitonic emissions allow the possibility to tune the inherent optical, electrical, and optoelectronic properties of 2D materials via a variety of external stimuli, making them potential candidates for novel optoelectronic applications. In this review, we summ…
Transport of charge carriers can be controlled by doping through chemical and physical means. Unlike chemical doping, physical doping is carried out by a special technique through gate voltages in a field-effect transistor geometry. This technique keeps the carrier channels free from defects without complications from the crystalline structure and the dopant impurity sites. In this paper we discuss the occurrence of superconductivity at the interface of a device by an unconventional technique. We examine a dynamical pairing mechanism governed by the excitons in the active device. The pairing o…
Excitonic insulator (EI) is an intriguing insulating phase of matter, where electrons and holes are bonded into pairs, so called excitons, and form a phase-coherent state via Bose-Einstein Condensation (BEC). Its theoretical concept has been proposed several decades ago, but the followed research is very limited, due to the rare occurrence of EI in natural materials and the lack of manipulating method of excitonic condensation. In this paper, we report the realization of a doping-controlled EI-to-semi-metal transition in Ta$_2$NiSe$_5$ using $in$-$situ$ potassium deposition. Combining with ang…
Nonradiative exciton lifetime in silicon is determined by comparison of the experimental and theoretical curves of bulk minority charge carriers lifetime on doping and excitation levels. This value is used to analyze the influence of excitonic effects on internal luminescence quantum yield at room temperature, taking into account both nonradiative and radiative exciton lifetimes. A range of Shockley-Hall-Reed lifetimes is found, where excitonic effects lead to an increase of internal luminescence quantum yield.
Intrinsic electrical and excitonic properties of monolayer transition metal dichalcogenides are studied on CYTOP fluoropolymer substrates with greatly suppressed unintentional doping and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid states backdates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between the bandage renormalization, Pauli blocking and carrier screening against carrier doping.
Dual-band infrared photodetectors (DBIPs) can discriminate desired signals from complex scenes and thus are highly expected for threat-warning, remote sensing, and astronomy applications. Conventional DBIPs with high-performances are, however, typically based on semiconductor thin films, but remain the challenges of complex spatial align, expensive growth and cooling requirement. Here, we report a tunable graphene plasmonic photodetector with dual-band infrared spectral selectivity driven by ferroelectric superdomain. The periodic ferroelectric polarization array with nanoscale ring shapes pro…
Despite 2D materials holding great promise for a broad range of applications, the proliferation of devices and their fulfillment of real-life demands are still far from being realized. Experimentally obtainable samples commonly experience a wide range of perturbations (ripples and wrinkles, point and line defects, grain boundaries, strain field, doping, water intercalation, oxidation, edge reconstructions) significantly deviating the properties from idealistic models. These perturbations, in general, can be entangled or occur in groups with each group forming a complex perturbation making the …
We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator Ta$_2$NiSe$_5$, as well as its evolution upon Sulfur doping. Our experimental data show that while the excitonic insulating phase is still preserved at a Sulfur-doping level of 25$\%$, such phase is heavily suppressed when there is a substantial amount, $\sim$ 50$\%$, of S-doping at liquid nitrogen temperatures. Moreover, our photon energy-dependent measurements reveal a clear three dimensionality of the electronic structure, both in Ta$_2$NiSe$_5$ and Ta$_2$Ni(Se$_{1-x}$S$_x$)$_5$ ($x=…
Transition metal dichalcogenide (TMDC) monolayer has recently emerged as an important two-dimensional semiconductor with promising potentials for electronic and optoelectronic devices. Unlike semi-metallic graphene, layered TMDC has a sizable band gap. More interestingly, when thinned down to a monolayer, TMDC transforms from an indirect bandgap to a direct bandgap semiconductor, exhibiting a number of intriguing optical phenomena such as valley selective circular dichroism, doping dependent charged excitons, and strong photocurrent responses. However, the fundamental mechanism underlying such…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the o…
Dopant-induced modifications of the optical properties of GaSe
Faculty of Physics, University of Warsaw（华沙大学物理学院）；Advanced Materials Research Group, Faculty of Engineering, University of Nottingham（诺丁汉大学工程学院先进材料研究组）；Institute for Problems of Material Science, National Academy of Sciences of Ukraine（乌克兰国家科学院材料科学问题研究所）
The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (> 6 $μ$s) and…
We report on large exciton tuning in WSe$_2$ monolayers via substrate induced non-degenerate doping. We observe a redshift of $\sim$62 meV for the $A$ exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe$_2$ is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to the dielectric substrates such as hBN and SiO$_2$. As the evidence of doping from HOPG to WSe$_2$, a drastic increase of the trion emission intensity was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe$_2$/HOPG, WS…
In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequence of these contrasting symmetries, here we show that bilayer WS$_2$ exhibits a quantum confined Stark effect (QCSE) that is linear with the applied out-of-plane electric field, in contrary to a quadratic one for a monolayer. The interplay between the unique layer degree of freedom in the bilayer and the field driven partial inter-conversion betwee…
Optical spectra of two-dimensional transition-metal dichalcogenides (TMDC) are influenced by complex multi-particle excitonic states. Their theoretical analysis requires solving the many-body problem, which in most cases, is prohibitively complicated. In this work, we calculate the optical spectra by exact diagonalization of the three-particle Hamiltonian within the Tamm-Dancoff approximation where the doping effects are accounted for via the Pauli blocking mechanism, modelled by a discretized mesh in the momentum space. The single-particle basis is extracted from the {\it ab initio} calculati…
Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using different sources of MoS2 -- a natural one and one prepared at high pressure and high temperature -- and different substrates bringing varying amounts of charged impurities and by separating the contributi…
