Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of physical phenomena such as anomalous magneto-electric coupling and Majorana excitations. Although TI surface states have been detected in Bi-based compounds by ARPES and STM techniques, electrical control over their density, required for most transport experiments, remains a challenge. Existing materials are heavily doped in the bulk, thus preventing electrical tunability of the surface states and their integration into topological quantum electronic devices. Here we show that electronic transport in metallic Bi2Se3 nanoscale devices can be controlled by tuning the surface density via the electric field effect. By choosing an appropriate high-k dielectric, we are able to shift the Fermi energy through the charge neutrality point of the surface states, resulting in ambipolar transport characteristics reminiscent of those observed in graphene. Combining magnetotransport, field effect, and geometry dependent experiments, we provide transport measurements of the surface state mobility, and identify likely scattering mechanisms by measuring its temperature dependence.
Ambipolar surface state transport in non-metallic stoichiometric Bi$_2$Se$_3$ crystals
在Bi $_2$ Se $_3$中实现真正的体绝缘行为，具有简单的单能带电子结构和相当大的带隙的原型拓扑绝缘体，已经被由硒空位引起的众所周知的自掺杂效应所禁止，硒空位的额外电子将化学势移动到体导带中。我们报道了一种新的合成方法，用于实现化学计量比的Bi $_2$ Se $_3$晶体，其在电输运中表现出非金属行为下降到低温。霍尔效应测量表明存在电子和空穴类载流子，后者确定与表面态传导和实现双极运输散装Bi $_2$ Se $_3$晶体没有门控技术。随着载流子迁移率超过最高值尚未报道的拓扑表面状态在这种材料中，通过向上能带弯曲的双极传输的实现被发现提供了一个关键的方法，以提高这种材料的潜力，为未来的研究和应用。
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ doping level). At 6K, a long-distance tail appears in the luminescence spatial profile, indicative of charge and spin transport, only limited by the length of the NW. This tail is independent on excitation power and temperature. Using a self-consistent calculation based on the drift-diffusion and Poisson equations as well as on photocarrier statistics (Van Roosbroeck model), it is found that this tail is due to photocarrier d…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we dem…
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The press…
Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene. Here, we demonstrate the tuning of the ambipolar nature of the semiconductor polymer N2200 from Polyera ActiveInk by incorporating graphene electrodes in a transistor geometry. Our devices show a balanced ambipolar behavior with high current ON-OFF ratio and charge carrier mobilities. These effects are caused by both the effe…
Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes
研究了高偏压下具有肖特基势垒接触的半导体单壁纳米管（SWNTs）中的电荷输运。我们观察到几乎对称的双极传输与电子和空穴电流显着超过25微安，在金属单壁碳纳米管由于光学声子发射报告的电流极限。在单极状态下，研究了四种简单的场相关速度模型（弹道、电流饱和、速度饱和和恒定迁移率）;饱和速度为2 x 10^7 cm/s的速度饱和模型可以最好地解释高偏压行为。
We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by a resistance decreasing linearly with decreasing temperatu…
We show that a static electric field induces the transition from a ferromagnetic metal to an antiferromagnetic insulator owing to the Bloch oscillation of conduction electrons. In the steady state, the electric current is inversely proportional to the applied electric field, implying the nonperturbative insulating nature that is different from the Wannier-Stark localization. Possible experimental realization based on recent terahertz pulse sources is discussed.
It is well known that the electronic thermal conductivity of clean compensated semimetals can be greatly enhanced over the electric conductivity by the availability of an ambipolar mechanism of conduction, whereby electrons and holes flow in the same direction experiencing negligible Coulomb scattering as well as negligible impurity scattering. This enhancement -- resulting in a breakdown of the Wiedemann-Franz law with an anomalously large Lorenz ratio -- has been recently observed in two-dimensional monolayer and bilayer graphene near the charge neutrality point. In contrast to this, three-d…
By the means of screened exchange density functional theory, we find that the phosphorene nanoribbons with bare zigzag edges that undergo Peierls distortion is a antiferromagnetic semiconductor in which the polarized states are mainly localized at the edges. Under application of external electric fields, the phosphorene nanoribbons present exotic electronic structure transitions including semiconducting, half-metallic, and metallic states.
Electrical image potentials can be important in small spaces, such as nanoscale pores in porous electrodes, which are used in capacitive desalination and in supercapacitors. It will be shown here that inside pores in porous metallic materials the image potentials can be considerably larger than near flat walls, as a result of the fact that the dielectric constant for an electric field perpendicular to a wall is much smaller than the bulk dielectric constant of water. Calculations will be presented for the image potential in spherical and cylindrically shaped pores. The calculations for cylindr…
Bulk LiOsO3 was experimentally identified as a "ferroelectric" metal where polar distortions coexist with metallicity [Shi et al., Nature Materials 12, 1024 (2013)]. It is generally believed that polar displacements in a "ferroelectric" metal cannot be switched by an external electric field. Here, via comprehensive density functional theory calculations, we demonstrate that a two-unit-cell-thick LiOsO3 thin film exhibits a ferroelectric ground state having an out-of-plane electric dipole moment that can be switched by an external electric field. Moreover, its dipole moment-versus-electric-fiel…
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density…
