纳米结构金属电触头的光电性能
Optical and Electrical Properties of Nanostructured Metallic Electrical Contacts
摘要：
我们研究了在倾斜衬底上通过真空金属蒸发获得的具有梯度厚度的银膜的光学和电学性质，以评估它们作为半透明电接触的用途。我们测量了它们的椭圆偏振系数，光传输和电导率为不同的宽度，我们采用了一种有效的递归方法来计算它们的宏观介电函数，它们的光学性质和它们的微观电场。非常薄的薄膜的拓扑结构对应于断开的岛，而非常宽的薄膜是简单连接的。对于中间宽度的膜变得不连续的，多连接的，其微观电场发展热点的光学谐振出现附近的导电相的渗透阈值，产生大的欧姆损耗，增加了吸收率以上的相应的均匀的膜。优化膜的厚度以使其透射率在导电相的逾渗阈值以上最大化，我们获得了透射率T = 0.41和薄层电阻$R_{\square}^{\mathrm{max}}\approx2.7Ω$的膜。我们还分析了多孔硅电致发光器件的发射频率偏移时，银膜作为固体电接触在电解质的替代。
英文摘要：
We study the optical and electrical properties of silver films with a graded thickness obtained through metallic evaporation in vacuum on a tilted substrate to evaluate their use as semitransparent electrical contacts. We measure their ellipsometric coefficients, optical transmissions and electrical conductivity for different widths, and we employ an efficient recursive method to calculate their macroscopic dielectric function, their optical properties and their microscopic electric fields. The topology of very thin films corresponds to disconnected islands, while very wide films are simply connected. For intermediate widths the film becomes semicontinuous, multiply connected, and its microscopic electric field develops hotspots at optical resonances which appear near the percolation threshold of the conducting phase, yielding large ohmic losses that increase the absorptance above that of a corresponding homogeneous film. Optimizing the thickness of the film to maximize its transmittance above the percolation threshold of the conductive phase we obtained a film with transmittance T = 0.41 and a sheet resistance $R_{\square}^{\mathrm{max}}\approx2.7Ω$. We also analyze the observed emission frequency shift of porous silicon electroluminescent devices when Ag films are used as solid electrical contacts in replacement of electrolytic ones.
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