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arXiv 2202.04898physics.optics
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用于先进纳米光子学的纳米结构过渡金属二硫属化物多层膜

Nanostructured transition metal dichalcogenide multilayers for advanced nanophotonics

Battulga Munkhbat, Betül Küçüköz, Denis G. Baranov, Tomasz J. Antosiewicz, Timur O. Shegai

摘要:

过渡金属二硫属化合物(TMD)由于其特殊的光学、激子、力学和电学性质而引起人们的广泛关注。纳米结构多层TMD最近被证明是非常有前途的纳米光子应用,由于其异常高的折射率和光学各向异性的动机。在这里,我们将这一愿景扩展到更复杂的结构,如纳米盘和纳米孔的周期性阵列,以及概念验证波导和谐振器。我们特别专注于各种先进的纳米工艺策略,包括精心选择电子束光刻和蚀刻方法的抗蚀剂。这里研究的具体材料包括半导体WS $_2$、面内各向异性ReS $_2$和金属TaSe $_2$、TaS $_2$和NbSe $_2$。由此产生的纳米结构可能会影响几个纳米光子和光电领域,包括高折射率纳米光子学,等离子体激元和片上光学电路。在这里开发的TMD材料相关的纳米纤维参数的知识将有助于拓宽这些材料在全TMD纳米光子学的未来应用范围。

英文摘要:

Transition metal dichalcogenides (TMDs) attract significant attention due to their exceptional optical, excitonic, mechanical, and electronic properties. Nanostructured multilayer TMDs were recently shown to be highly promising for nanophotonic applications, as motivated by their exceptionally high refractive indexes and optical anisotropy. Here, we extend this vision to more sophisticated structures, such as periodic arrays of nanodisks and nanoholes, as well as proof-of-concept waveguides and resonators. We specifically focus on various advanced nanofabrication strategies, including careful selection of resists for electron beam lithography and etching methods. The specific materials studied here include semiconducting WS$_2$, in-plane anisotropic ReS$_2$, and metallic TaSe$_2$, TaS$_2$ and NbSe$_2$. The resulting nanostructures can potentially impact several nanophotonic and optoelectronic areas, including high-index nanophotonics, plasmonics and on-chip optical circuits. The knowledge of TMD material-dependent nanofabrication parameters developed here will help broaden the scope of future applications of these materials in all-TMD nanophotonics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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