超薄型二硒化钯场效应晶体管的压力可调双极导电和磁滞
Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
摘要：
研究了少层二硒化钯（PdSe 2）场效应晶体管在电场、光场、电子辐照和气压等外界激励下的特性。我们观察到双极传导和滞后的转移曲线的PdSe2材料未保护和剥离。我们调整双极传导和它的滞后行为在空气和纯氮气环境中。在室温下观察到的占主导地位的p型传输可逆地变成占主导地位的n型导电通过降低压力，这可以同时抑制滞后。压力控制可用于对称化和稳定高性能逻辑电路中所需的器件的传输特性。晶体管不受短沟道效应的影响，但受陷阱状态的影响，其特征时间为分钟。在扫描电子显微镜成像过程中由于电子辐照而显著降低的沟道电导在室温下退火几分钟后恢复。这项工作为PdSe2在电子设备中的开发铺平了道路，通过提供基于实验的和更深入的了解PdSe2晶体管中的电荷传输受到电应力和其他外部代理。
英文摘要：
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents.
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