Electric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate voltage, where the shift rate depends on the graphite thickness. The thickness-dependent peak shift was clarified in terms of the inter-layer screening length to the electric field in the double-gated graphite film. The screening length of 1.2 nm was experimentally obtained.
Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magneto-resistance and Hall resistance as a function of gate voltage is observed as sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov de Haas oscillations in magneto-resistance. The effective mass of electron and hole carriers has been measured from the temperature dependant behavior of these oscillations.
The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hopping parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing ou…
A simple one-stage solution-based method was developed to produce graphene nanoribbons by sonicating graphite powder in organic solutions with polymer surfactant. The graphene nanoribbons were deposited on silicon substrate, and characterized by Raman spectroscopy and atomic force microscopy. Single-layer and few-layer graphene nanoribbons with a width ranging from sub-10 nm to tens of nm and length ranging from hundreds of nm to 1 μm were routinely observed. Electrical transport properties of individual graphene nanoribbons were measured in both the back-gate and polymer-electrolyte top-gate …
One of the enduring challenges in graphene research and applications is the extreme sensitivity of its charge carriers to external perturbations, especially those introduced by the substrate. The best available substrates to date, graphite and hBN, still pose limitations: graphite being metallic does not allow gating, while both hBN and graphite having lattice structures closely matched to that of graphene, may cause significant band structure reconstruction. Here we show that the atomically smooth surface of exfoliated MoS2 provides access to the intrinsic electronic structure of graphene wit…
Screening-controlled dynamical criticality in the quantum Hall regime
Indian Institute of Science（印度科学学院）；Indian Institute of Science Education and Research, Pune（印度科学教育与研究学院，浦那）；National Institute for Materials Science（国立材料研究所）；Weizmann Institute of Science（魏茨曼科学研究所）
We computed the inter-layer bonding properties of graphite using an ab-initio many body theory. We carried out variational and diffusion quantum Monte Carlo calculations and found an equilibrium inter-layer binding energy in good agreement with most recent experiments. We also analyzed the behavior of the total energy as a function of interlayer separation at large distances comparing the results with the predictions of the random phase approximation.
In this work we investigated correlations between the internal microstructure and sample size (lateral as well as thickness) of mesoscopic, tens of nanometer thick graphite (multigraphene) samples and the temperature $(T)$ and field $(B)$ dependence of their electrical resistivity $ρ(T,B)$. Low energy transmission electron microscopy reveals that the original highly oriented pyrolytic graphite material -- from which the multigraphene samples were obtained by exfoliation -- is composed of a stack of $\sim 50 $nm thick and micrometer long crystalline regions separated by interfaces running paral…
We perform Raman scattering experiments on natural graphite in magnetic fields up to 45 T, observing a series of peaks due to interband electronic excitations over a much broader magnetic field range than previously reported. We also explore electron-phonon coupling in graphite via magnetophonon resonances. The Raman G peak shifts and splits as a function of magnetic field, due to the magnetically tuned coupling of the E2g optical phonons with the K- and H-point inter-Landau-level excitations. The analysis of the observed anticrossing behavior allows us to determine the electron-phonon couplin…
Electrostatically stabilized surface flat bands in rhombohedral graphite at zero displacement field
Aalto University School of Science（阿尔托大学理学院）；University of California at Santa Barbara（加州大学圣塔芭芭拉分校）；National High Magnetic Field Laboratory（国家高磁场实验室）；Florida State University（佛罗里达州立大学）
Study of In-plane and Interlayer Interactions During Aluminum Fluoride Intercalation in Graphite: Implications for the Development of Rechargeable Batteries
The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields has been investigated using infrared magneto-transmission experiments. With the increasing in-plane component of the magnetic field B, we observe significant broadening and partially also splitting of interband inter-Landau level transitions, which originate at the H point of the graphite Brillouin zone, where the charge carriers behave as massless Dirac fermions. The observed behavior is attributed to the lifting of the twofold degeneracy of Landau levels at the H point - a degeneracy which in graphite compl…
We demonstrate a mechanism for magnetoresistance oscillations in insulating states of two-dimensional (2D) materials arising from the interaction of the 2D layer and proximal graphite gates. We study a series of devices based on different two-dimensional systems, including mono- and bilayer Td-WTe2, angle-aligned MoTe2/WSe2 heterobilayers and Bernal-stacked bilayer graphene, which all share a similar graphite-gated geometry. We find that the resistivity of the 2D system generically shows quantum oscillations as a function of magnetic field corresponding to a high-density Fermi surface when the…
The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m$Ωμ{\rm m}^2$. For small rotation angles, the coherent interlayer resistance exponentially approaches the ideal quantum resistance at energies away from the charge neutrality point. Over a range of intermediate angles, the resistance increases exponentially with cell size for minimum size unit cells. Larger cell sizes, of similar angles, may not follow this trend. …
We report studies of the magnetospectroscopy of graphite into a new regime of high energies and ultra-high magnetic fields which allows us to perform the first spectroscopic studies of the interlayer split off bands, $E_{1}$ and $E_{2}$. These bands can be well described by an asymmetric bilayer model and have only a small interlayer band gap asymmetry. We show that all of the properties of the electrons and holes can be described by a simple relativistic behaviour determined by $γ_{0}$ and $γ_{1}$.
Magneto-transmission of a thin layer of bulk graphite is compared with spectra taken on multilayer epitaxial graphene prepared by thermal decomposition of a SiC crystal. We focus on the spectral features evolving as \sqrt{B}, which are evidence for the presence of Dirac fermions in both materials. Whereas the results on multi-layer epitaxial graphene can be interpreted within the model of 2D Dirac fermions, the data obtained on bulk graphite can only be explained taking into account the 3D nature of graphite, e.g. by using the standard Slonczewski-Weiss-McClure model.
Interlayer tunneling in graphite mesa-type structures is studied at a strong in-plane magnetic field $H$ up to 55 T and low temperature $T=1.4$ K. The tunneling spectrum $dI/dV$ vs. $V$ has a pronounced peak at a finite voltage $V_0$. The peak position $V_0$ increases linearly with $H$. To explain the experiment, we develop a theoretical model of graphite in the crossed electric $E$ and magnetic $H$ fields. When the fields satisfy the resonant condition $E=vH$, where $v$ is the velocity of the two-dimensional Dirac electrons in graphene, the wave functions delocalize and give rise to the peak …
A series of measurements using a technique called electrostatic-manipulation scanning tunneling microscopy (EM-STM) were performed on a highly-oriented pyrolytic graphite surface. The electrostatic interaction between the STM tip and the sample can be tuned to produce both reversible and irreversible large-scale movement of the graphite surface. Under this influence, atomic-resolution STM images reveal that a continuous electronic transition from triangular symmetry, where only alternate atoms are imaged, to hexagonal symmetry can be systematically controlled. Density functional theory (DFT) c…
The low energy electronic excitations in single layer and bilayer graphite (graphene) resemble quantum-relativistic particles also known as Dirac Fermions (DF). They possess an internal degree of freedom, chirality, that leads to unusual Landau Level (LL) energy sequences in a magnetic field and profoundly alters the magneto-transport properties. One of the consequences is an anomalous Quantum-Hall effect, recently detected in both single layer and bi-layer graphene. However the underlying cause, the unusual LL sequence, was never observed. Here we report the direct observation of LL of DF by …
We show that magnetoresistance of Bernal-stacked graphite (with the magnetic field ${\bf B}$ parallel to the c-axis and the current in the ab plane) scales linearly with the magnetic field over an interval of classically weak fields. The linearity is related to the presence of extremely light, Dirac-like carriers near the $H$ ($H^{\prime}$)- points of the Brillouin zone. The Hall resistivity in this interval also shows a non-analytic, $B\ln |B|$ behavior, and is dominated by holes.
A detailed magnetoresistance study of bulk and microflake samples of highly oriented pyrolytic graphite with a thickness of 25 $μ$m to 23~nm reveals that the usually observed field-induced metal-insulator and electronic phase transitions vanish in thinner samples. The observed suppression is accompanied by orders of magnitude decrease of the magnetoresistance and of the amplitude of the Shubnikov-de-Haas oscillations. The overall behavior is related to the decrease in the quantity of two-dimensional interfaces between crystalline regions of the same and different stacking orders present in gra…
