发表机构
Ioffe Institute（约费研究所）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文报道了在0.1 T磁场下GaAs样品中观测到的巨型光磁二极管效应，具有10的整流比，由载流子双极漂移和快速表面复合理论解释。
AI 中文摘要
我们报道了在0.1 T磁场下观察到具有10的巨型整流比的光磁二极管效应。该效应表现为在外加磁场中，光电流随外加电压呈二极管状依赖关系。这种显著的非互易性是在低温下、带间光激发条件下，在高质量VPE生长的GaAs样品中观察到的。光电导在同时反转电场和磁场极性时保持不变。在光致发光中观察到类似行为，且不对称比更高。这些发现可由载流子在电场和磁场中的双极漂移理论以及快速表面复合很好地描述。
英文摘要
We report the observation of a photomagnetodiode effect with a giant rectification ratio of 10 at a magnetic field of 0.1 T. The effect consists of a diode-like dependence of the photocurrent on the applied voltage that emerges in an external magnetic field. Such a pronounced nonreciprocity is observed in high-quality VPE-grown GaAs samples at low temperatures at interband photoexcitation. The photoconductivity is invariant upon reversing the polarity of both electric and magnetic fields. Similar behavior with even higher asymmetry ratio is observed in photoluminescence. The findings are well described by the theory of ambipolar drift of carriers in electric and magnetic fields together with fast surface recombination.
Comments7 pages, 3 figures
