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arXiv 1104.0438cond-mat.mes-hall
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三层石墨烯中狄拉克费米子的量子霍尔效应和朗道能级交叉

Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene

Thiti Taychatanapat, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero

摘要:

我们研究了六方氮化硼上的高迁移率(\textgreater 100,000 cm $^2$ /V $\cdot$ s)三层石墨烯器件中的电子输运,这使得能够观察到Shubnikov-de Haas振荡和非常规的量子霍尔效应。TLG子带的无质量和质量特性导致了一组朗道能级交叉,其磁场和填充因子坐标使得能够直接确定用于描述三层石墨烯的特殊电子结构的Slonczewski-Weiss-McClure(SWMcC)参数。此外,在高磁场下,简并交叉点分裂成流形,表明存在对称性破缺的量子霍尔态。

英文摘要:

We investigate electronic transport in high mobility (\textgreater 100,000 cm$^2$/V$\cdot$s) trilayer graphene devices on hexagonal boron nitride, which enables the observation of Shubnikov-de Haas oscillations and an unconventional quantum Hall effect. The massless and massive characters of the TLG subbands lead to a set of Landau level crossings, whose magnetic field and filling factor coordinates enable the direct determination of the Slonczewski-Weiss-McClure (SWMcC) parameters used to describe the peculiar electronic structure of trilayer graphene. Moreover, at high magnetic fields, the degenerate crossing points split into manifolds indicating the existence of broken-symmetry quantum Hall states.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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