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arXiv 0903.0486cond-mat.mes-hallcond-mat.dis-nn
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硅量子阱中部分填充朗道能级交叉引起的绝缘相

Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well

Tohru Okamoto, Kohei Sasaki, Kiyohiko Toyama, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki

摘要:

我们研究了高迁移率硅二维电子系统中的磁输运通过原位倾斜的样品相对于磁场。在朗道水平交叉过程中观察到的非整数填充因子的纵向电阻率明显下降。与霍尔电阻率的变化,表现出粒子-空穴对称性,这表明,在相关的朗道能级的电子或空穴成为本地化的符合,其中的赝自旋非极化状态预计是稳定的。

英文摘要:

We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.

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