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arXiv 1607.00784cond-mat.mes-hallcond-mat.mtrl-sci
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三层石墨烯中的朗道能级分裂、相变和非均匀电荷分布

Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene

Leonardo C. Campos, Thiti Taychatanapat, Maksym Serbyn, Kawin Surakitbovorn, Kenji Watanabe, Takashi Taniguchi, Dmitry A. Abanin, Pablo Jarillo-Herrero

摘要:

我们报告的磁输运研究的双栅极,伯纳尔堆叠三层石墨烯(TLG)封装在氮化硼晶体。我们观察到一个量子霍尔效应阶梯,这表明第零朗道能级的12倍简并度完全提升。作为垂直电场的函数,我们的数据表现出一系列的相变之间的所有整数量子霍尔态的填充因子间隔$-8<ν<0$。我们开发了一个理论模型,并认为,与单层和双层石墨烯,所观察到的朗道能级分裂和量子霍尔相变可以理解内的单粒子图片,但意味着存在的电荷密度之间的不平衡的内层和外层的TLG,即使在电荷中性和零横向电场。我们的研究结果表明,一个以前未占能带结构参数的重要性,连同其他紧束缚参数的更准确的估计,结果在一个显着改善的确定TLG的电子和朗道能级结构。

英文摘要:

We report on magneto-transport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the twelve-fold degeneracy of the zeroth Landau level. As a function of perpendicular electric field, our data exhibits a sequence of phase transitions between all integer quantum Hall states in the filling factor interval $-8<ν<0$. We develop a theoretical model and argue that, in contrast to monolayer and bilayer graphene, the observed Landau level splittings and quantum Hall phase transitions can be understood within a single-particle picture, but imply the presence of a charge density imbalance between the inner and outer layers of TLG, even at charge neutrality and zero transverse electric field. Our results indicate the importance of a previously unaccounted band structure parameter which, together with a more accurate estimate of the other tight-binding parameters, results in a significantly improved determination of the electronic and Landau level structure of TLG.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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