We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching successfully lead to various resistance values in its low resistance state, suggesting the possibility for multi-level-operation. A mechanism for the bipolar switching is qualitatively discussed in terms of the modulation of the tunnel barrier by the reactive Ti layer on top of the barrier.
Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and stable resistance states without any application of compliance current (CC), with a resistance ratio of high resistance state (HRS) and low resistance state (LRS) > 102. Small switching voltage (< 1 volt) and lower current in both the resistance states confirms the fabrication of low power consumption device. In the LRS, the conduction mechani…
BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with the maximum Ion/Ioff ~ 450, and low set and reset voltages ~ 1.1 V and -1.5 V, respectively. The devices are stable against on-off cycles with ~ 104 s retention time without any significant degradation. The variations in the set and reset voltages are 0.4 V and 0.6 V, respectively. We found that ohmic and trap-controlled space charge limited conductions are re…
Cyclic electric field stress on bipolar resistive switching devices
本文研究了在铜氧化物超导体$_2$ O $_{7-δ}$（YBCO）表面上溅射金属（Au，Pt）所形成的界面的非易失性电阻态随周期性脉冲幅值增加而增加的效应。我们分析了在不同温度（$T$）下施加脉冲$N$的数目对高（$R_H$）态和低（$R_L$）态[ $α=(R_{H}-R_{L})/R_{L}$]之间的剩余电阻变化的相对幅度的影响。我们表明，产生阻变（RS，即$α>0$）所需的临界电压（$V_c$）随着$N$或$T$的增加而减小。我们还发现了脉冲电压和产生$α=α_0$的RS所需的脉冲数$N_{α_0}$之间的幂律关系。这种关系仍然非常相似的Basquin方程用于描述应力疲劳寿命曲线在机械测试。这指出了RS的物理学之间的相似性，与由电脉冲引起的氧空位的扩散相关，以及受到重复机械应力的材料中缺陷的传播。
Bipolar resistive switching (BRS) phenomenon has been demonstrated in Mn3O4 using Al (Aluminum)/Mn3O4/FTO (Fluorine doped Tin Oxide) Resistive Random Access Memory (RRAM) device. The fabricated RRAM device shows good retention, non volatile behavior and forming free BRS. The Current-Voltage (I-V) characteristics and the temperature dependence of the resistance (R-T) measurements were used to explore conduction mechanisms and the thermal activation energy (Ea). The resistance ratio of high resistance state (HRS) to low resistance state (LRS) is ~102. The fabricated RRAM device shows different c…
Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, their stability and flexibility etc. Herein we report Langmuir-Blodgett and spin-coated film based bipolar resistive switching devices using organic material indole derivative. Pressure - area per molecule isotherm, Brewster Angle Microscopy, Atomic Force Microscopy and Scanning Electron Microscopy were used to have an idea about organization and morphology of the organic material onto thin film. Based on device structure an…
We report on resistive switching (RS) characteristics of W/WO3-x/Pt-based thin film memristors modulated by precisely controlled oxygen non-stoichiometry. RS properties of the devices with varied oxygen vacancy (VO) concentration have been studied by measuring their DC current voltage properties. Switchability of the resistance states in the memristors have been found to depend strongly on the VOs concentration in the WO3-x layer. Depending on x, the memristors exhibited forming-free bipolar, forming-required bipolar and non-formable characteristics. Devices with high VOs concentration (~1*102…
We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a ferroelectric microelectrode in bioelectronics. The BTO films are grown by pulsed laser deposition (PLD) on semiconducting Nb-doped (0.5 wt\%) SrTiO$_{3}$ (Nb:STO) single crystal substrates. The ferroelectric properties of the bare BTO films are demonstrated by piezoresponse force microscopy (PFM) measurements. Cyclic voltammetry (CV) measurements in EFS configuration, …
The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with quantized resistance. In the paper we study the properties of fabricated memristors based on the non-stoichiometric $ZrO_2$ nanotubes in different resistive switching modes. Anodic oxidation of the $Zr$ foil has been used to synthesize a zirconia layer of $1.7$ $μ$$m$ thickness, consisting of an ordered array of vertically oriented nanotubes with outer diame…
High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we examine the resistive switching (RS) behavior in growth controlled HfO2/La0.67Sr0.33MnO3 heterostructures and their tunability under low magnetic field. It is demonstrated that oxygen-deficient HfO2 films show bipolar switching with high on/off ratio, stable retention, as well as good endurance owing to the orthorhombic-rich phase constitution and charge (de)-tra…
Here we report the design and synthesis of an imidazole derivative namely 1-benzyl-2,4,5-triaryl imidazole and its switching behaviour assembled onto Langmuir-Blodgett films. Monolayer characteristic of imidazole at the air-water interface has been studied by surface pressure vs area per molecule isotherm, hysteresis analysis and insitu Brewster Angle Microscopy . These studies indicated the formation of stable floating Langmuir film at the water subphase. Atomic Force Microscopy investigation confirmed the successful deposition of the Langmuir film onto solid substrate. Device consisted of 60…
