氧化锆纳米管中量子导体的形成及电阻开关记忆效应
Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes
摘要：
具有薄氧化层的金属-电介质-金属三明治结构用于非易失性存储器的忆阻元件的发展前景归因于可靠地形成具有量子化电阻的持续功能态的可能性。本文研究了基于非化学计量$ZrO_2$纳米管的忆阻器在不同阻变模式下的特性。已使用$Zr$箔的阳极氧化来合成$1.7$ $μ$ $m$厚度的氧化锆层，其由具有75 nm外径的垂直取向的纳米管的有序阵列组成。采用掩模磁控沉积法制备了$Zr/ZrO_2/Au$夹层结构。研究了$Zr/ZrO_2/Au$忆阻器在单极和双极模式下的阻变效应。评估了高电阻（HRS）和低电阻（LRS）状态之间的电阻比$\geq3\cdot10^4$。研究发现，由于形成了基于氧空位的量子导体（$V_O$），LRS的电导率在很宽的范围内被量子化，最小值为$0.5G_0=38.74$ $μ$ $S$。已经提出了允许$V_O$在施加的电场中迁移的$Zr/ZrO_2/Au$忆阻器的电阻切换机制。结果表明，欧姆型和空间电荷限制的电导率实现在LRS和HRS，相应的。我们提出的结果，可用于开发有效的忆阻器的功能$Zr/ZrO_2/Au$纳米层结构的基础上，具有多个电阻状态和高电阻比。
英文摘要：
The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with quantized resistance. In the paper we study the properties of fabricated memristors based on the non-stoichiometric $ZrO_2$ nanotubes in different resistive switching modes. Anodic oxidation of the $Zr$ foil has been used to synthesize a zirconia layer of $1.7$ $μ$$m$ thickness, consisting of an ordered array of vertically oriented nanotubes with outer diameter of 75 nm. $Zr/ZrO_2/Au$ sandwich structures have been fabricated by mask magnetron deposition. The effects of resistive switching in the $Zr/ZrO_2/Au$ memristors in unipolar and bipolar modes have been investigated. The resistance ratios $\geq3\cdot10^4$ between high-resistance (HRS) and low-resistance (LRS) states have been evaluated. It has been founded the conductivity of LRS is quantized in a wide range with minimum value of $0.5G_0=38.74$ $μ$$S$ due to the formation of quantum conductors based on oxygen vacancies ($V_O$). Resistive switching mechanisms of $Zr/ZrO_2/Au$ memristors with allowing for migration of $V_O$ in an applied electric field have been proposed. It has been shown that the ohmic type and space charge limited conductivities are realized in the LRS and HRS, correspondingly. We present the results which can be used for development of effective memristors based on functional $Zr/ZrO_2/Au$ nanolayered structure with multiple resistive states and high resistance ratio.
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