用于氧化还原基阻变存储器件的分数阶Marcus-Hush-Chidsey-Yakopcic电流-电压模型
Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices
AI总结：
本研究提出结合Marcus-Hush-Chidsey方程与Yakopcic方程的分数阶电路级阻变存储模型，通过引入0-1阶分数导数扩展状态变量动力学，可高保真拟合硅基电化学金属化存储器件的电流-电压特性。
摘要：
我们提出一种电路级模型，结合Marcus-Hush-Chidsey电子电流方程与描述状态变量的Yakopcic方程，用于表征金属-离子导体-金属结构的阻变存储器件。我们引入阶数在0到1之间的任意分数阶导数，对原本由一阶时间导数描述的状态变量动力学进行了扩展。研究表明，该扩展模型能极高保真地拟合在含Ag-Cu合金的硅电化学金属化存储器件上测得的电流-电压特性数据。
英文摘要：
We propose a circuit-level model combining the Marcus-Hush-Chidsey electron current equation and the Yakopcic equation for the state variable for describing resistive switching memory devices of the structure metal-ionic conductor-metal. We extend the dynamics of the state variable originally described by a first-order time derivative by introducing a fractional derivative with an arbitrary order between zero and one. We show that the extended model fits with great fidelity the current-voltage characteristic data obtained on a Si electrochemical metallization memory device with Ag-Cu alloy.
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