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arXiv 0908.3527cond-mat.mtrl-scicond-mat.soft
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聚3,4-乙撑二氧噻吩:聚苯乙烯磺酸盐薄膜的双极阻变特性

Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): poly(styrenesulfonate) thin film

Hu Young Jeong, Jong Yun Kim, Tae Hyun Yoon, Sung-Yool Choi

摘要:

研究了夹在铝电极之间的聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐(PEDOT:PSS)薄膜的可逆阻变特性。J-V扫描曲线表现出滞后行为,这取决于所施加的偏压的极性。通过对I-V曲线的分析,揭示了该结中的电荷输运遵循体空间电荷限制导电(SCLC)模型。利用透射电子显微镜(TEM)分析,证实了PEDOT:PSS膜的初始高电阻状态与Al金属电极与PEDOT:PSS膜之间的氧化还原反应诱导的PSS-链的偏析有关。正空间电荷存在于PEDOT:PSS薄膜的顶部区域,可以被认为是电子捕获和释放过程的一个可能的陷阱中心。

英文摘要:

We investigated the reversible resistive switching of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic behavior which depends on the polarity of the applied voltage bias. From the analysis of I-V curves, it was revealed that the charge transport through the junction was governed by the bulk space-charge-limited conduction (SCLC) model. Using transmission electron microscopy (TEM) analysis, it was confirmed that the initial high resistance state of PEDOT:PSS films is related with the segregation of PSS- chains induced by redox reaction between a Al metal electrode and PEDOT:PSS film. Positive space charges present on the top region of PEDOT:PSS films can be proposed as a possible trap centers of electron trapping and detrapping process.

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