Recently developed techniques for generating precisely equidistant optical frequencies over broad wavelength ranges are revolutionizing precision physical measurement [1-3]. These frequency "combs" are produced primarily using relatively large, ultrafast laser systems. However, recent research has shown that broad-bandwidth combs can be produced using highly-nonlinear interactions in microresonator optical parametric oscillators [4-11]. Such devices not only offer the potential for developing extremely compact optical atomic clocks but are also promising for astronomical spectroscopy [12-14], ultrashort pulse shaping [15], and ultrahigh-speed communications systems. Here we demonstrate the generation of broad-bandwidth optical frequency combs from a CMOS-compatible integrated microresonator [16,17], which is a fully-monolithic and sealed chip-scale device making it insensitive to the surrounding environment. We characterize the comb quality using a novel self-referencing method and verify that the comb line frequencies are equidistant over a bandwidth that is nearly an order of magnitude larger than previous measurements. In addition, we investigate the ultrafast temporal properties of the comb and demonstrate its potential to serve as a chip-scale source of ultrafast (sub-ps) pulses.
We designed, fabricated and characterized a flat multi-level diffractive lens (MDL) comprised of only silicon with diameter = 15.2mm, focal length of 19mm, and operating over the longwave infrared (LWIR) spectrum of 8um to 14um. We experimentally demonstrated field of view of 46deg, depth of focus >7mm and wavelength-averaged Strehl ratio of 0.46. All these metrics were comparable to those of a conventional refractive lens. The active device thickness is only 8um and its weight (including the silicon substrate) is less than 0.2g.
Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the advancement of scalable on-chip networks. In this work, we numerically design, fabricate and demonstrate the performance of monolithic metalenses from SiC suitable for on-chip optical operations. We engineer two distinct lenses, with parabolic and cubic phase profiles, operating in the near infrared spectral range, which is of interest for quantum and photonic ap…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on t…
Wafer-scale monolithic integration of Ce:YIG films and magneto-optical isolators on silicon
National Engineering Research Centre of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China（电磁辐射控制材料国家工程研究中心，电子科技大学）；Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China（多光谱吸收材料与结构教育部重点实验室，电子科技大学）；Institute of Optics and Electronics, Chinese Academy of Sciences（中国科学院光电技术研究所）；HK Institute of Quantum Science and Technology, University of Hong Kong（香港量子科学研究所，香港大学）
Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, CNRS（巴黎萨克雷大学国家科学研究中心纳米科学和纳米技术研究中心）；Université Côte d’Azur, CNRS, Institut de Physique de Nice (INPHYNI)（蔚蓝海岸大学法国国家科学研究中心尼斯物理研究所）；CEA-LETI-Minatec（法国原子能和替代能源委员会技术、电子与信息技术实验室）
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, stra…
Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready silicon based modulators and conventional material based devices utilizing Lithium niobate fall short in simultaneously providing high chip packaging density and fast speed. Current driven ITO based modulators have the potential to achieve both enabled by efficient light matter interactions. Here, we introduce micrometer compact Mach Zehnder Interferometer (MZI) …
Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integrated laser soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss silicon nitride microresonators on monolithic silicon substrate. Thousands of devices are produced from a sing…
