基于负载电阻和电流注入操作的硅光子光学-电信号-光学转换器
Silicon photonic optical-electrical-optical converters based on load-resistor and current-injection operation
AI总结：
本研究提出基于负载电阻和电流注入操作的硅光子OEO转换器，实现了可重新配置的非线性转移和芯片上射频增益，为可扩展的光电计算和光学神经网络提供了紧凑的构建模块。
摘要：
光学-电信号-光学（OEO）转换器是低延迟、高能效光子计算的关键基本元件，因为它们能够在芯片上实现非线性激活和光学信号再生。我们报告了两种monolithically集成的硅光子OEO转换器——负载电阻（高速变种）和电流注入（高增益变种）类型——在硅光子晶圆厂上制造。每个器件结合了锗光电探测器和微环调制器（MRM）。转换器表现出可重新配置的非线性转移函数和可测量的芯片上射频OEO增益。射频OEO增益与MRM偏置功率成线性关系，斜率分别为0.10 mW⁻¹（负载电阻为10 kΩ）和1.4 mW⁻¹（电流注入），在实际偏置功率下（分别约为10 mW和1 mW）实现了增益>1的区域。眼图证实了高速负载电阻变种在500-Ω负载下的清晰开通，达到4 Gb/s。据我们所知，这是首次实验演示了monolithically集成、晶圆厂制造的硅光子负载电阻型OEO转换器，表现出可重新配置的非线性转移和芯片上的射频OEO增益。在载流子注入设备中，激活斜率超过单位，产生3.9 dB的灭光比再生。短脉冲测量得到3 dB带宽分别为1.49 GHz、160 MHz（负载电阻为500 Ω和10 kΩ）和76 MHz（电流注入），与射频数据一致。能量分析显示了能量带宽权衡（负载电阻为RC限制，注入为寿命限制），并概述了通过减少电容和改进EO效率实现亚皮焦每比特操作的路线。这些结果确立了硅光子OEO转换器作为可扩展的光电计算和光学神经网络的紧凑、晶圆厂兼容的构建模块。
英文摘要：
Optical-electrical-optical (OEO) converters are key primitives for low-latency, energy-efficient photonic computing because they enable nonlinear activation and optical signal regeneration on chip. We report two monolithically integrated silicon-photonic OEO converters-load-resistor (high-speed variant) and current-injection (high-gain variant) types-fabricated at a silicon photonics foundry. Each device combines a germanium photodetector with a micro-ring modulator (MRM). The converters exhibit reconfigurable nonlinear transfer functions and measurable on-chip RF OEO gain. The RF OEO gain scales linearly with the MRM bias power, with slopes of 0.10 mW^-1 (load-resistor of 10 kΩ) and 1.4 mW^-1 (current-injection), enabling a gain > 1 region at practical bias powers (~10 mW and ~1 mW, respectively). Eye diagrams confirm clear openings up to 4 Gb/s for a high-speed load-resistor variant with a 500-Ω load. To the best of our knowledge, this is the first experimental demonstration of a monolithically integrated, foundry-fabricated silicon-photonic load-resistor type OEO converter exhibiting reconfigurable nonlinear transfer and on-chip RF OEO gain. In the carrier-injection device, the activation slope exceeds unity, yielding 3.9 dB extinction-ratio regeneration. Short-pulse measurements yield 3-dB bandwidths of 1.49 GHz, 160 MHz (load-resistor of 500 Ω and 10 kΩ), and 76 MHz (current-injection), consistent with the RF data. Energy analysis shows an energy-bandwidth trade-off (RC-limited for load-resistor vs. lifetime-limited for injection) and outline routes to sub-pJ/bit operation via reduced capacitance and improved EO efficiency. These results establish silicon-photonic OEO converters as compact, foundry-compatible building blocks for scalable optoelectronic computing and optical neural networks.
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