AI 中文总结
研究基于磁光石榴石的单片集成光隔离器，通过真空局部激光退火避免传统炉退火高温对芯片的损害，在硅基马赫-曾德尔干涉仪内实现Ce:YIG结晶，给出器件性能参数，证明可通过高通量技术集成热敏感硅光子器件和磁光薄膜。
AI 中文摘要
稳定的硅光子电路需要基于磁光石榴石的单片集成光隔离器。然而，传统炉退火使石榴石结晶会使整个芯片暴露于高温，从而使硅波导和金属电极退化。本文通过在真空中使用局部激光退火使铈取代钇铁石榴石（Ce:YIG）结晶，避免了这种退化。Ce:YIG通过离子束溅射在无籽层的情况下直接沉积在硅基马赫-曾德尔干涉仪内。915nm光束仅加热微米级沟槽内的石榴石区域，使周围电路和电极完好无损。该器件在1540nm波长下实现了13.6dB的隔离比，对应法拉第旋转为0.092°/μm，插入损耗为20.4dB，传播损耗为9.5dB。结果表明，热敏感的硅光子器件和需要高温处理的磁光薄膜可通过与大规模生产兼容的高通量技术集成。
英文摘要
Stable silicon photonic circuits require monolithically integrated optical isolators based on magneto-optical garnet. However, crystallizing the garnet by conventional furnace annealing exposes the entire chip to high temperature and degrades the silicon waveguides and the metal electrodes. Here we avoid this degradation by using local laser annealing in vacuum to crystallize cerium-substituted yttrium iron garnet (Ce:YIG), deposited by ion beam sputtering without a seed layer, directly within a silicon-based Mach-Zehnder interferometer. A 915 nm beam heats only the garnet region confined in micrometer-scale trenches, leaving the surrounding circuit and electrodes intact. The device achieves an isolation ratio of 13.6 dB at a wavelength of 1540 nm, corresponding to a Faraday rotation of 0.092$°$/$μ$m, with an insertion loss of 20.4 dB and a propagation loss of 9.5 dB. Transmission electron microscopy reveals the crystallized Ce:YIG and a ~10 nm boundary region at the interface with the Si waveguide. These results demonstrate that thermally sensitive silicon photonic devices and magneto-optical thin films requiring high-temperature processing can be integrated by a high-throughput technique compatible with mass production.
Comments6 pages, 6 figures
DOI：10.1109/ACCESS.2026.3729586
