We report an optical link on silicon using micrometer-scale ring-resonator enhanced silicon modulators and waveguide-integrated germanium photodetectors. We show 3 Gbps operation of the link with 0.5 V modulator voltage swing and 1.0 V detector bias. The total energy consumption for such a link is estimated to be ~120 fJ/bit. Such compact and low power monolithic link is an essential step towards large-scale on-chip optical interconnects for future microprocessors.
Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready silicon based modulators and conventional material based devices utilizing Lithium niobate fall short in simultaneously providing high chip packaging density and fast speed. Current driven ITO based modulators have the potential to achieve both enabled by efficient light matter interactions. Here, we introduce micrometer compact Mach Zehnder Interferometer (MZI) …
The accelerating increase in information traffic demands the expansion of optical access network systems that require cost reduction of optical and photonic components. Low cost, ease of fabrication, and integration capabilities of low optical-loss polymers make them attractive for photonic applications. In addition to passive wave-guiding components, electro-optic (EO) polymers consisting of a polymeric matrix doped with organic nonlinear chromophores have enabled wide-RF-bandwidth and low-power optical modulators. Beside board level passive and active optical components, compact on-chip modu…
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
Reduction in the operating voltage of electrooptic modulators is needed in order to remove the bottleneck in the flow of data between electronics and optical interconnects. We report experimental demonstration of a 10 fold reduction in an electrooptic modulator's half-wave voltage up to 50 GHz. This was achieved by employing optical sideband-only amplification.
State Key Laboratory of Precision Spectroscopy, East China Normal University（华东师范大学精密光谱科学国家重点实验室）；The Extreme Optoelectromechanics Laboratory (XXL), School of Physics, East China Normal University（华东师范大学物理学院极端光机电集成实验室）；Hefei National Laboratory（合肥国家实验室）；Shanghai Research Center for Quantum Sciences（上海量子科学研究中心）；Collaborative Innovation Center of Extreme Optics, Shanxi University（山西大学极端光学协同创新中心）
Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material fo…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can also be used to make optical/plasmonic modulators. In this paper, we report field effect electro-absorption modulators (FEOMs) each made of an ultrathin epsilon-near-zero (ENZ) film, as the active material, sandwiched in a silicon or plasmonic waveguide. Without a bias, the ENZ film maximizes the attenuation of the waveguides and the modulators work at the …
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we experimentally demonstrate that plasmonic modulators do not trade off any performance parameter, featuring - at the same time - a short length of 10s of micrometers, record-high flat frequency response bey…
Physical challenges at the device and interconnect level limit both network and computing energy efficiency. While photonics is being considered to address interconnect bottlenecks, optical routing is still limited by electronic circuitry, requiring substantial overhead for optical-electrical-optical conversion. Here we show a novel design of an integrated broadband photonic-plasmonic hybrid device termed MODetector featuring dual light modulation and detection function to act as an optical transceiver in the photonic network-on-chip. With over 10 dB extinction ratio and 0.8 dB insertion loss …
Research on graphene has revealed its unique optical properties, including strong coupling with light, high-speed operation, and gate-variable optical conductivity, which promise to satisfy the needs of future electro-optic (EO) modulators. In particular, recent work demonstrated a broadband EO modulator based on the interband absorption of graphene with overall length only 40μm. However, compared with the size of on-chip electronic components it is still bulky. On-chip optical interconnects require EO modulation at the nanoscale. The key to achieve nanoscale graphene EO modulation is to great…
Silicon microring modulator (Si-MRM) has become one of the most promising compact modulators to meet the increasing capacity requirements of the next generation optical interconnection. The limited electro-optical (E-O) bandwidth, low modulation efficiency, and inherent modulation nonlinearity are the major factors that limit the Si-MRM modulation speed. To address these issues, we comprehensively optimize the Si-MRM from the device to the modulation and the signal processing. Large modulation bandwidth over 67GHz is achieved in our newly fabricated Si-MRM. Additionally, the laser wavelength a…
High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperat…
High-efficiency compact optical transmitter with a total bit energy of 0.78 pJ/bit including silicon slow-light modulator and open-collector current-mode driver
With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into Silicon- and Nitride-based photonics has showed high-speed promise, albeit at the expense of millimeter- to centimeter-scale footprints. The hunt for an electro-optic modulator that combines high speed, energy efficiency, and compactness to support high component density on-chip continues. Using a double-layer graphene optical modulato…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits scaling density. Furthermore, modulators bear a fundamental a frequency-response to energy-sensitive trade-off, a limitation that can be overcome with coupling-based modula…
Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact formfactors that are seamlessly integratable with Silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously inte…
There has been a recently renewed interest in neuromorphic photonics, a field promising to access pivotal and unexplored regimes of machine intelligence. Progress has been made on isolated neurons and analog interconnects; nevertheless, this renewal has yet to produce a demonstration of a silicon photonic neuron capable of interacting with other like neurons. We report a modulator-class photonic neuron fabricated in a conventional silicon photonic process line. We demonstrate behaviors of transfer function configurability, fan-in, inhibition, time-resolved processing, and, crucially, autaptic …
A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the weak plasma dispersion effect in Si. Therefore, it is essential to find a novel modulation scheme that is compatible with a Si photonics platform. Here, we demonstrate an InGaAsP/Si hybrid metal-oxide-semiconductor (MOS) optical modulator with a Mach-Zehnder interferometer (MZI) formed by direct wafer bonding with an Al2O3 bonding interface. Electron accumul…
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines …
Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large he…
In atomic multi-level systems, adiabatic elimination is a method used to minimize complicity of the system by eliminating irrelevant and strongly coupled levels by detuning them from one-another. Such a three-level system, for instance, can be mapped onto physical in form of a three-waveguide system. Actively detuning the coupling strength between the respective waveguide modes allows modulating light propagating through the device, as proposed here. The outer waveguides act as an effective two- photonic-mode system similar to ground- and excited states of a three-level atomic system, whilst t…
The ability to modulate an optical field via an electric field is regarded as a key function of electro-optic interconnects, which are used in optical communications and information processing systems. One of the main required devices for such interconnects is the electro-optic modulator (EOM). Current EOM based on the electro-optic effect and the electro-absorption effect often is bulky and power inefficient due to the weak electro-optic properties of its constituent materials. Here we propose a new mechanism to produce an arbitrary-waveform EOM based on the quantum interference, in which bot…
Push-Pull acousto-optic modulator based on non-suspended thin-film lithium niobate on silicon substrate
Elmore Family School of Electrical and Computer Engineering, Purdue University（普渡大学埃尔莫电气与计算机工程学院）；Department of Electrical and Computer Engineering, University of Michigan（密歇根大学电气与计算机工程系）
Silicon-organic hybrid integrated devices have emerging applications ranging from high-speed optical interconnects to photonic electromagnetic-field sensors. Silicon slot photonic crystal waveguides (PCWs) filled with electro-optic (EO) polymers combine the slow-light effect in PCWs with the high polarizability of EO polymers, which promises the realization of high-performance optical modulators. In this paper, a broadband, power-efficient, low-dispersion, and compact optical modulator based on an EO polymer filled silicon slot PCW is presented. A small voltage-length product of Vπ*L=0.282Vmm …
Silicon modulators are key components in silicon photonics to support the dense integration of electro-optic (EO) functional elements on a compact chip for various applications including high-speed data transmission, signal processing, and photonic computing. Despite numerous advances in promoting the operation speed of silicon modulators, a bandwidth ceiling of 67 GHz emerges in practices and becomes an obstacle to paving silicon photonics toward Tbps level data throughput on a single chip. Here, we theoretically propose and experimentally demonstrate a design strategy for silicon modulators …
We describe a compact modulator based on a planar photonic crystal nanocavity whose resonance is electrically controlled. A forward bias applied across a p-i-n diode shifts the cavity into and out of resonance with a continuous-wave laser field in a waveguide. The sub-micron size of the nanocavity promises extremely low capacitance, high bandwidth, and efficient on-chip integration in optical interconnects.
Electrooptic modulation performs the conversion between the electrical and optical domain with applications in data communication for optical interconnects, but also for novel optical compute algorithms such as providing nonlinearity at the output stage of optical perceptrons in neuromorphic analogue optical computing. Since the clock frequency for photonics on chip has a power overhead sweet slot around 10s of GHz, ultrafast modulation may only be required in long distance communication, but not for short onchip links. Here we show a roadmap towards atto Joule per bit efficient modulators on …
Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular e…
We construct a binary synthetic photonic lattice theoretically with an effective magnetic field by projecting two fiber loops' light intensity and adjusting the phase distribution precisely. By tuning the phase modulator, wave vector, and propagation constant of an effective waveguide, the interface's transmittance could be manipulated. Further light dynamics show that the light pulse can achieve total reflection without diffraction and exchanges the light energy in two optical fiber loops completely when phase distribution and wave vector meet certain conditions. Our study may provide a new w…
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better performance and thermal insulation than electrical wires and are imperative for true quantum communication. Silicon PICs have matured for room temperature applications but their cryogenic performance is limited by the absence of efficient low temperature electro-optic (EO) modulation. While detectors and lasers perform better at low temperature, cryogenic opt…
Lithium niobate is a multi-functional material, which has been regarded as one of the most promising platform for the multi-purpose optical components and photonic circuits. Targeting at the miniature optical components and systems, lithium niobate microstructures with feature sizes of several to hundreds of micrometers have been demonstrated, such as waveguides, photonic crystals, micro-cavities, and modulators, et al. In this paper, we presented subwavelength nanograting metasurfaces fabricated in a crystalline lithium niobate film, which hold the possibilities towards further shrinking the …
Encoding information onto optical fields is the backbone of modern telecommunication networks. Optical fibers offer low loss transport and vast bandwidth compared to electrical cables, and are currently also replacing coaxial cables for short-range communications. Optical fibers also exhibit significantly lower thermal conductivity, making optical interconnects attractive for interfacing with superconducting circuits and devices. Yet little is known about modulation at cryogenic temperatures. Here we demonstrate a proof-of-principle experiment, showing that currently employed Ti-doped LiNbO mo…
Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it…
Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received considerable interest due to the ability of cost-effective integration of electronics and optics on a single chip. While silicon enables the realization of optical waveguides and passive components, the integration of another, optically absorbing, material is required for photodetection. Germanium or compound semiconductors are traditionally used for this pu…
Using criteria of bandwidth and energy consumption for signal guiding and processing, system-level figures of merit for both passive and active plasmonic circuit components are introduced, benchmarking their performance for the realisation of high-bandwidth optical data communication on a chip. The figure of merit for passive plasmonic interconnects has been derived in terms of the system level performance of the plasmonic circuitry, emphasising the bandwidth and power consumption densities. These parameters are linked to the local waveguide characteristics, such as the mode propagation length…
On-chip photonic networks have the potential to transmit and route information more efficiently than electronic circuits. Recently, a number of silicon-based optical devices including modulators, buffers, and wavelength converts have been reported. However, a number of technical challenges need to be overcome before these devices can be combined into network-level architectures. In particular, due to the high refractive index contrast between the core and cladding of semiconductor waveguides, nanoscale defects along the waveguide often scatter light into the backward-propagating mode. These re…
A real-time ranging lidar with 0.1 Mega Hertz update rate and few-micrometer resolution incorporating dispersive Fourier transformation and instantaneous microwave frequency measurement is proposed and demonstrated. As time-stretched femtosecond laser pulse passing through an all-fiber Mach-Zehnder Interferometer, where the detection light beam is inserted into the optical path of one arm, the displacement is encoded to the frequency variation of the temporal interferogram. To deal with the challenges in storage and real-time processing of the microwave pulse generated on a photodetector, we t…
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a large portion of applications in the mid-IR. In the 2 to 5 um wavelength range, environmental sensing, life sensing, and security all rely on optical signatures of molecular vibrations to identify comp…
Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical signals in the 2-8 μm range. Mid-IR integrated optical systems are capable of addressing applications including industrial process and environmental monitoring, threat detection, medical diagnostics, and free-space communication. Rapid progress has led to the demonstration of various silicon components designed for the on-chip processing of mid-IR signals, incl…
