Silicon microring modulator (Si-MRM) has become one of the most promising compact modulators to meet the increasing capacity requirements of the next generation optical interconnection. The limited electro-optical (E-O) bandwidth, low modulation efficiency, and inherent modulation nonlinearity are the major factors that limit the Si-MRM modulation speed. To address these issues, we comprehensively optimize the Si-MRM from the device to the modulation and the signal processing. Large modulation bandwidth over 67GHz is achieved in our newly fabricated Si-MRM. Additionally, the laser wavelength and bias voltage of Si-MRM are optimized to significantly improve the modulation performance. Finally, we comprehensively study the theoretical model of modulation nonlinearity in Si-MRM, especially transient nonlinearity. A bidirectional gate recurrent unit (Bi-GRU) neural network with minor modification is applied to compensate for the nonlinear impairments. With all these efforts, we experimentally demonstrate a 302 Gbps Si-MRM-based O-band optical interconnection and achieve 300 Gbps transmission over a 1-km standard single-mode fiber using the discrete multitone modulation format with bit and power loading (BPL-DMT).
We demonstrated a silicon integrated microring modulator working at the 2-um waveband with an L-shaped PN junction. 15-GHz 3-dB electro-optic bandwidth and <1 Vcm modulation efficiency for 45-Gbps NRZ-OOK signaling is achieved at 1960 nm.
We demonstrate an all-optical four-channel wavelength multicasting in a coupled Silicon microring resonator system. The scheme is based on two-photon absorption induced free carrier dispersion in Silicon. The coupled cavity facilitates resonance splitting that is utilized as individual channels for multicasting. Using the split resonances, we achieve an aggregate multicasted data rate of 48 Gbps (4X12 Gbps). Moreover, we also present a detailed analysis and performance of the multicasting architecture.
Optical isolators, while commonplace in bulk- and fiber-optic systems, remain a key missing component in integrated photonic systems. Isolation using magneto-optic effects has been difficult to implement due to fabrication restraints, motivating use of other non-reciprocal effects such as temporal modulation. We demonstrate a non-reciprocal modulator comprising a pair of microring modulators and a microring phase shifter in an active silicon photonic process which, in combination with standard frequency filters, facilitates isolation. Isolation up to 13 dB is measured with a 3 dB bandwidth of …
A fast and simple frequency domain method is introduced for the analysis of microring modulator response using the Jacobi Anger expansion method. Resonance frequency modulated microring (FMMR) modulators and coupling modulated microring modulators (CMMR) are analyzed using this method. The linearity of these modulators is analyzed. The third order intercept point (IP3) is calculated for CMMR devices and compared to Mach Zehnder interferometer (MZI) modulator devices. It is shown that CMMR devices can achieve a 12dB higher IP3 compared to MZI devices. CMMR devices have high second order nonline…
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform has garnered increasing interest as an alternative to the SOI platform for realizing high-performance PICs. This is because of its several beneficial properties over the SOI platform, such as low optical losses, high thermo-optic stability, broader wavelength transparency range, and high tolerance to fabrication-process variations. However, SiN-on-SiO$_2$ b…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits scaling density. Furthermore, modulators bear a fundamental a frequency-response to energy-sensitive trade-off, a limitation that can be overcome with coupling-based modula…
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O- and the C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses ($α\approx 1$…
We present a detailed study of electrical and optical generated free carrier on the spectral characteristics of a silicon microring modulator. The spectral distortion generated due to thermal and free carriers is presented, and the mechanism for mitigation is also presented. We observed that two-photon induced nonlinearity could be addressed by operating the modulator at suitable bias points. Furthermore, by applying small-signal drive the spectral distortion can be restored. We also present the effect of optical power and drive signal limit on the spectral characteristics. The study allows on…
We present our design, fabrication, and experimental results for very high-performance isotropic microring resonators with small radii (~ 30 μm) based on single-mode strip waveguides and transverse magnetic (TM) polarization in a fully etched lithium niobate (Z-cut) thin-film on insulator. The loss of the devices is predicted to be < 10 dB/cm, and is measured to be ~ 7 dB/cm. The measured optical responses of microring resonators exhibit an extinction of ~ 25 dB (close to critical coupling), a 3 dB optical bandwidth of 49 pm (~ 6 GHz) for all-pass structures, an extinction of ~ 10 dB for add-d…
Silicon modulators are key components in silicon photonics to support the dense integration of electro-optic (EO) functional elements on a compact chip for various applications including high-speed data transmission, signal processing, and photonic computing. Despite numerous advances in promoting the operation speed of silicon modulators, a bandwidth ceiling of 67 GHz emerges in practices and becomes an obstacle to paving silicon photonics toward Tbps level data throughput on a single chip. Here, we theoretically propose and experimentally demonstrate a design strategy for silicon modulators …
Electro-optic modulation performs a technological relevant functionality such as for communication, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. Wile Silicon photonics enabled the integration and hence miniaturization of optoelectronic devices, the weak electro-optic performance of Silicon renders these modulators to be bulky and power-hungry compared to a single switch functionality known from electronics. To gain deeper insights into the physics and operation of modulators hetero-generous integration of emerging electro-optical…
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fu…
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better performance and thermal insulation than electrical wires and are imperative for true quantum communication. Silicon PICs have matured for room temperature applications but their cryogenic performance is limited by the absence of efficient low temperature electro-optic (EO) modulation. While detectors and lasers perform better at low temperature, cryogenic opt…
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input - of GPDs compared to conventional PDs. Here we overcome this shortfall by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve $>$90% light absor…
A fundamental challenge of the quantum revolution is to efficiently interface the quantum computing systems operating at cryogenic temperatures with room temperature electronics and media for high data-rate communication. Current approaches to control and readout of such cryogenic computing systems use electrical cables, which prevent scalability due to their large size, heat conduction, and limited bandwidth1. A more viable approach is to use optical fibers which allow high-capacity transmission and thermal isolation. A key component in implementing photonic datalinks is a cryogenic optical m…
We demonstrate an optical data wavelength converter based on an electrically driven photonic molecule structure comprising two coupled active silicon microring resonators. The converter, supplied by a continuous-wave (CW) microwave drive signal equal in frequency to the desired wavelength shift, replicates an input optical signal at a new wavelength. The optical coupled-cavity system matches supermode resonances to the input and wavelength-converted optical waves maximizing the conversion efficiency. Two device designs that perform wavelength up- and down-conversion by 0.19 nm (24 GHz) with -1…
Integrated photonics has enabled signal synthesis, modulation and conversion using photonic integrated circuits (PIC). Many materials have been developed, among which silicon nitride (Si$_3$N$_4$) has emerged as a leading platform particularly for nonlinear photonics. Low-loss Si$_3$N$_4$ PIC has been widely used for frequency comb generation, narrow-linewidth lasers, microwave photonics, photonic computing networks, and even surface-electrode ion traps. Yet, among all demonstrated functionalities for Si$_3$N$_4$ integrated photonics, optical non-reciprocal devices, such as isolators and circu…
