AI 中文总结
该研究开发了一款200毫米CMOS中试线制备的异质氮化硅光子学平台，通过微转移印刷集成有源组件，实现了低损耗特性与近红外激光发射，可支撑可见光至近红外波段的光子学应用。
AI 中文摘要
下一代技术（包括光互连、量子计算、增强现实/虚拟现实（AR/VR）以及医疗诊断）的商业化，需要一种低损耗的光子学平台，该平台需在可见光和近红外波段提供紧凑、多功能的系统。尽管氮化硅（SiN）因具有超低损耗和宽透明窗口而成为优异的材料，但以可扩展、可靠的方式集成来自不同材料平台的有源组件（如光源、调制器和光电探测器）仍然存在挑战。微转移印刷是一种新兴的晶圆级异质集成技术，可作为后端后处理步骤实施，不会干扰主要的在线制造工艺。本研究展示了在200毫米CMOS中试线中制造的双LPCVD SiN层平台，该平台集成了微转移印刷模块，允许在明确的凹槽上集成有源组件。该平台还可使用氢化非晶硅（a-Si:H）层，以增加其多功能性，支持消逝耦合的III-V激光器以及近红外区域的其他无源功能。我们报告了全晶圆级测量结果：SiN在488纳米波长下的光损耗为4分贝/厘米，在940纳米波长下为0.23分贝/厘米；此外，从SiN到a-Si:H层的过渡损耗仅为0.35分贝，与模拟值吻合良好。最后，为展示更高级的功能，我们将基于GaAs的增益段微转移印刷到多个晶圆上，实现了晶圆间一致的970纳米激光发射，片上光功率约为1毫瓦。这些结果表明，该集成光子学平台有望在亚1微米光谱区域开启广泛的新应用。
英文摘要
The commercialization of next-generation technologies, including optical interconnects, quantum computing, AR/VR, and medical diagnostics, requires a low-loss photonic platform offering compact, multifunctional systems in the visible and near-infrared range. Although silicon nitride (SiN) is an excellent material due to its ultra-low loss and broad transparency window, integrating active components such as light sources, modulators and photodetectors from diverse material platforms in a scalable, reliable way remains challenging. Micro-transfer printing is an emerging wafer-scale heterogeneous integration technology that can be implemented as a back-end post-processing step without disrupting the primary in-line fabrication process. In this work, we present a dual LPCVD SiN layer platform fabricated in a 200 mm CMOS pilot line, that incorporates micro-transfer printing modules, allowing the integration of active components on well defined recesses. A hydrogenated amorphous silicon layer is also available to increase the versatility of the platform allowing for evanescently-coupled III-V lasers as well as other passive functionality in the near-infrared region. We report full wafer-scale measurements showing low optical SiN losses of 4 dB/cm and 0.23 dB/cm at a wavelength of 488 nm and 940 nm respectively. In addition, a transition loss of only 0.35 dB is obtained from the SiN to the a-Si:H layer, in good agreement with simulated values. Finally, to showcase more advanced functionality, GaAs-based gain sections are micro-transfer printed on several dies, achieving consistent die-to-die lasing at 970 nm with on-chip optical powers of approximately 1 mW. These results showcase the potential of the integrated photonics platform towards unlocking a wide range of new applications in the sub-1-$μ$m spectral region.
Comments16 pages, 6 figures
