具有马赫-曾德尔干涉仪的高调制效率InGaAsP/Si混合MOS光调制器
High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer
摘要：
集成在硅上的高调制效率光调制器是实现低功耗和高容量光互连的关键。然而，Si基光调制器由于Si中的弱等离子体色散效应而遭受低相位调制效率。因此，必须找到一种与Si光子学平台兼容的新型调制方案。在这里，我们展示了InGaAsP/Si混合金属氧化物半导体（MOS）光调制器与马赫-曾德尔干涉仪（MZI）形成的直接晶片键合与Al 2 O3键合界面。在InGaAsP MOS界面处的电子积累使得能够提取InGaAsP中的电子诱导的折射率变化，其显著大于Si中的折射率变化。该调制器的相位调制效率为0.047 Vcm，比Si MOS光调制器的相位调制效率高5倍。这种方法为低功率、高速和高密度光链路提供了一种新的有效的Si光子平台上的相位调制方案。
英文摘要：
A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the weak plasma dispersion effect in Si. Therefore, it is essential to find a novel modulation scheme that is compatible with a Si photonics platform. Here, we demonstrate an InGaAsP/Si hybrid metal-oxide-semiconductor (MOS) optical modulator with a Mach-Zehnder interferometer (MZI) formed by direct wafer bonding with an Al2O3 bonding interface. Electron accumulation at the InGaAsP MOS interface enables the extraction of the electron-induced refractive index change in InGaAsP, which is significantly greater than that in Si. The presented modulator exhibits a phase modulation efficiency of 0.047 Vcm, which is approximately 5 times higher than that of Si MOS optical modulators. This approach provides a new efficient scheme of phase modulation on a Si photonics platform for low-power, high-speed, and high-density optical links.
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