The longitudinal resistances of a six-terminal graphene p-n junction under a perpendicular magnetic field are investigated. Because of the chirality of the Hall edge states, the longitudinal resistances on top and bottom edges of the graphene ribbon are not equal. In the presence of suitable disorder, the top-edge and bottom-edge resistances well show the plateau structures in the both unipolar and bipolar regimes and the plateau values are determined by the Landau filling factors only. These plateau structures are in excellent agreement with the recent experiment. For the unipolar junction, the resistance plateaus emerge in the absence of impurity and they are destroyed by strong disorder. But for the bipolar junction, the resistances are very large without the plateau structures in the clean junction. The disorder can strongly reduce the resistances and leads the formation of the resistance plateaus, due to the mixture of the Hall edge states in virtue of the disorder. In addition, the size effect of the junction on the resistances is studied and some extra resistance plateaus are found in the long graphene junction case. This is explained by the fact that only part of the edge states participate in the full mixing.
Using ab-initio methods we investigate the possibility of three-terminal graphene "T-junction" devices and show that these all-graphene edge contacts are energetically feasible when the 1D interface itself is free from foreign atoms. We examine the energetics of various junction structures as a function of the atomic scale geometry. Three-terminal equilibrium Green's functions are used to determine the transmission spectrum and contact resistance of the system. We find that the most symmetric structures have a significant binding energy, and we determine the contact resistances in the junction…
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few \muA.
We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within the generalized gradient approximation. We found that as a function of the number of crystal layers the calculated transmission coefficients of multilayer silicene junctions decay much slower than for BN-based junctions We revisited the semiclassical Boltzmann theory of electronic transport and applied to multilayer silicene and BN-based junctions. The calcu…
We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar and the Hall resistances of SLG and tBLG in the device are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized…
Negative differential resistance - a decrease in current with increasing bias voltage - is a counter-intuitive effect that is observed in various molecular junctions. Here, we present a novel mechanism that may be responsible for such an effect, based on strong Coulomb interaction between electrons in the molecule and electrons on the atoms closest to the molecule. The Coulomb interaction induces electron-hole binding across the molecule-electrode interface, resulting in a renormalized and enhanced molecule-electrode coupling. Using a self-consistent non-equilibrium Green's function approach, …
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is su…
We consider a single molecule circuit embedded into solvent. The Born dielectric solvation model is combined with Keldysh nonequilibrium Green's functions to describe the electron transport properties of the system. Depending on the dielectric constant, the solvent induces multiple nonequilibrium steady states with corresponding hysteresis in molecular current-voltage characteristics as well as negative differential resistance. We identify the physical range of solvent and molecular parameters where the effects are present. The position of the negative differential resistance peak can be contr…
Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are…
Combining insights from quantum chemistry calculations with master equations, we discuss a mechanism for negative differential resistance (NDR) in molecular junctions, operated in the regime of weak tunnel coupling. The NDR originates from an interplay of orbital spatial asymmetry and strong electron-electron interaction, which causes the molecule to become trapped in a non-conducting state above a voltage threshold. We show how the desired asymmetry can be selectively introduced in individual orbitals in e.g., OPE-type molecules by functionalization with a suitable side group, which is in lin…
We study the effect that resistive regions have on the conductance of a quantum wire with interacting electrons which is connected to Fermi liquid leads. Using the bosonization formalism and a Rayleigh dissipation function to model the power dissipation, we use both scattering theory and Green's function techniques to derive the DC conductance. The resistive regions are generally found to lead to incoherent transport. For a single wire, we find that the resistance adds in series to the contact resistance of h/e^2 for spinless electrons, and the total resistance is independent of the Luttinger …
Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ~ 0.2 V and the valley current almost vanishes.…
Radiofrequency vortex spin-transfer oscillators based on magnetic tunnel junctions with very low resistance area product were investigated. A high power of excitations has been obtained characterized by a power spectral density containing a very sharp peak at the fundamental frequency and a series of harmonics. The observed behaviour is ascribed to the combined effect of spin transfer torque and Oersted-Ampère field generated by the large applied dc-current. We furthermore show that the synchronization of a vortex oscillation by applying a ac bias current is mostly efficient when the external …
The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could o…
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at t…
Vibronic effects in resonant electron transport through single-molecule junctions are analyzed. The study is based on generic models for molecular junctions, which include electronic states on the molecular bridge that are vibrationally coupled and exhibit Coulomb interaction. The transport calculations employ a master equation approach. The results, obtained for a series of models with increasing complexity, show a multitude of interesting transport phenomena, including vibrational excitation, rectification, negative differential resistance (NDR) as well as local cooling. While some of these …
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space wit…
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$…
In some recent experiments [A. J. Bestwick, et. al., Phys. Rev. Lett. 114, 187201 (2015), Cui-Zu Chang, et. al., Nat. Materials. 14, 473-477 (2015)] it has been shown that in observations of the quantum anomalous Hall (QAH) effect the longitudinal resistance $R_L$ increases as temperature $T$ increases, while Hall resistance $R_H$ loses its quantization with increase in $T$. This behavior was explained due to increased thermal fluctuations as $T$ increases. We show that similar effects arise in QAH samples with quasi-helical edge modes as disorder increases in presence of inelastic scattering …
The Hall (RH) and bend (RB) resistance of a graphene Hall bar structure containing a pn-junction are calculated when in the ballistic regime. The simulations are done using the billiard model. Introducing a pn-junction--dividing the Hall bar geometry in two regions--leads to two distinct regimes exhibiting very different physics: 1) both regions are of n-type and 2) one region is n-type and the other p-type. In regime (1) a 'Hall plateau'--an enhancement of the resistance--appears for RH. On the other hand, in regime (2), we found a negative RH, which approaches zero for large B. The bend resi…
We present a method to probe real-time dynamics in quantum mesoscopic systems using Ramsey interferometry. This allows us to explore the effect of interactions on quasi-particles in the time domain. We investigate the dephasing effects of an ohmic environment on an electron-hole pair in a tunnel junction. We show that dynamical Coulomb blockade phenomena can be observed for resistances much smaller than the quantum of resistance. Moreover, the crossover between high and low impedance limits can be probed for a constant resistance by a proper control of the voltage modulation.
Effect of DC electric field on longitudinal resistance of two dimensional electrons in a magnetic field
研究了在不同磁场和温度下，直流电场对重掺杂GaAs量子阱中高迁移率二维电子纵向电阻的影响。在电子运动发生朗道量子化的磁场中，观察到电场对电阻的强烈抑制。这种现象在高温下仍然存在，而Shubnikov de Haas振荡不存在。在低温极限下，这种效应所必需的电场的尺度与温度成正比。我们认为，纵向电阻的强烈减少是由直流电场引起的二维电子分布函数的非平凡变化的结果。与最近的理论的数据的比较产生的非弹性电子-电子散射时间$τ_{in}$和量子散射时间$τ_q$的二维电子在高温下，以前的方法是不成功的制度。
The quantum Hall and longitudinal resistances in multi-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurements, the transverse contacts are assumed to be located at p-n interface to avoid the mixing of edge states at the interface and the resulting quantized resistances are then topologically protected. According to the charge carrier type, the resistances in four-terminal p-n junction can be naturally divided into nine different regimes. The symmetric Hall and longitudinal resistances are observed, with lots of new robust q…
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance caused by an electric field applied to the metal electrodes. The aim of this work was to study this effect on the structure metal/YBCO6/YBCO7, where YBCO7 is a metallic phase and YBCO6 is an insulator phase which arises spontaneously by out-diffusion of oxygen from a few nanometers wide YBCO surface layer. Oriented YBa2Cu3O7 thin films were prepared by the me…
Embedded in an ohmic environment, the Josephson current peak can transfer part of its weight to finite voltage and the junction becomes resistive. The dissipative environment can even suppress the superconducting effect of the junction via a quantum phase transition occuring when the ohmic resistance $R_s$ exceeds the quantum resistance $R_{q}=h/(2e)^2$. For a topological junction hosting Majorana bound states with a $4 π$ periodicity of the superconducting phase, the phase transition is shifted to $4 R_{q}$. We consider a Josephson junction mixing the $2 π$ and $4 π$ periodicities shunted by …
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: $i$) both sides of the junction have the same carrier type, and $ii$) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band g…
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using extern…
Recently, a contact-resistance-measurement method was developed to detect the minigap, hence the Andreev bound states (ABSs), in Josephson junctions constructed on the surface of three-dimensional topological insulators (3D TIs). In this work, we further generalize that method to the circumstance with radio frequency (rf) irradiation. We find that with the increase of rf power, the measured minigap becomes broadened and extends to higher energies, in a way similar to the rf power dependence of the outer border of the Shapiro step region. We show that the corresponding data of contact resistanc…
Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions
低欧姆隧道结（即具有与量子电阻$R_{\rm q}\equiv h/e^2\approx 25.8$ k $Ω$相当或小于量子电阻的结）的一维（1D）阵列的性质已经在实验上和理论上进行了研究。我们的实验数据表明，-在协议与以前的结果单，双结系统-库仑阻塞效应生存，即使在强隧穿制度，仍然清晰可见的结电阻低至1 k $Ω$。我们发展了一个强隧穿区结阵列中电子输运的准经典理论。该理论的预测和实验数据之间的良好协议已被观察到。我们还表明，由于加热效应和相对较大的校正之间的线性关系的半宽度的电导下降周围的零偏置电压，$V_{1/2}$，和测量的电子温度，这样的阵列是劣于那些传统上使用的库仑阻塞测温法（CBT）。尽管如此，对半宽度的期望校正$ΔV_{1/2}$可以相当容易地确定，并且它与零偏置电压$ΔG$周围的电导下降的幅度成比例。比例常数是结电阻和量子电阻之比$R/R_{\rm q}$的函数，它是一种纯粹的强隧穿效应。
We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates and Hall type of plateaus are formed. These plateaus occur as a consequence of the restriction on the angle imposed by Snell's law allowing only electrons with a certain initial angles to transmit though the potential step. The size of the plateau and its position is determined by the position of the potential interface as well as the value of the applied pot…
We investigate transport in locally-gated graphene devices, where carriers are injected and collected along, rather than across, the gate edge. Tuning densities into the p-n regime significantly reduces resistance along the p-n interface, while resistance across the interface increases. This provides an experimental signature of snake states, which zig-zag along the p-n interface and remain stable as applied perpendicular magnetic field approaches zero. Snake states appear as a peak in transverse resistance measured along the p-n interface. The generic role of snake states disordered graphene …
We have studied quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally-controlled density allowing n-p-n and n-2D TI-n junctions. The resistance reveals the fractional plateau $2h/e^{2}$ in n-p-n regime in the presence of the strong perpendicular magnetic field. We found that in n-2D TI-n regime the plateaux in resistance in not universal and results from the edge state equilibration at the interface between chiral and helical edge modes. We provided the simple model describing the resistance quantiza…
The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied we predict oscillations in the Hall and the bend resistance as function of the magnetic field which are a consequence o…
We fabricate graphene-TiOx-Al tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of Al and when biased within the superconducting gap, the devices show enhanced dynamic resistance which increases with decreasing temperature. Application of radio frequency radiation affects the dynamic resistance through electronic heating. The relation between the electron temperature rise and the absorbed radiation power is measured, from which the bolometric parameters, including heat conductance, noise equivalent power and responsivity, are chara…
We investigate charge conductance and spin and valley polarization along with the tunnelling magneto-resistance (TMR) in silicene junctions composed of normal silicene and ferromagnetic silicene. We show distinct features of the conductances for parallel and anti-parallel spin configurations and the TMR, as the ferromagnetic-normal-ferromagnetic (FNF) junction is tuned by an external electric field. We analyse the behavior of the charge conductance and valley and spin polarizations in terms of the independent conductances of the different spins at the two valleys and the band structure of ferr…
We present low-temperature measurements of the low-frequency $1/f$ noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlO$_{x}$/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance have similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlO$_{x}$ barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typ…
Current-voltage characteristics of H2-Au molecular junctions exhibit intriguing steps around a characteristic voltage of 40 mV. Surprisingly, we find that a hysteresis is connected to these steps with a typical time scale > 10 ms. This time constant scales linearly with the power dissipated in the junction beyond an ofset power P_s = IV_s. We propose that the hysteresis is related to vibrational heating of both the molecule in the junction and a set of surrounding hydrogen molecules. Remarkably, we can engineer our junctions such that the hysteresis' characteristic time becomes >days. We demon…
Both experiments and theoretical studies have demonstrated that the interaction between the current carrying electrons and the induced polarization charge in single-molecule junctions leads to a strong renormalization of molecular charging energies. However, the effect on electronic excitations and molecular symmetries remain unclear. Using a theoretical framework developed for semiconductor nanostructure based single-electron transistors (SETs), we demonstrate that the image charge interaction breaks the molecular symmetries in a benzene based single-molecule transistor operating in the Coulo…
