A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule sandwiched between a pair of gold electrodes is presented. Upon increasing applied bias, it is found that a new phase in the broken symmetry wavefunction of the molecule emerges from the mixing of occupied and unoccupied molecular orbital. As a consequence, a non-linear change in the coupling between molecule and lead is evolved resulting to NDR. This model can be used to explain NDR in other class of metal-molecule junction device.
Using ab-initio methods we investigate the possibility of three-terminal graphene "T-junction" devices and show that these all-graphene edge contacts are energetically feasible when the 1D interface itself is free from foreign atoms. We examine the energetics of various junction structures as a function of the atomic scale geometry. Three-terminal equilibrium Green's functions are used to determine the transmission spectrum and contact resistance of the system. We find that the most symmetric structures have a significant binding energy, and we determine the contact resistances in the junction…
We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar and the Hall resistances of SLG and tBLG in the device are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized…
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is su…
Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions
在4.2 ~ 300 K温度范围内测量了外延生长的c轴取向YBa 2 Cu 3 O 7-x薄膜微桥与Ag对电极形成的平面结的电流-电压特性。的滞后行为有关的结电阻从高阻态切换到低阻态，反之亦然，观察和分析的最大电流偏置和温度依赖性。利用扫描隧道显微镜在亚微米尺度的YBa_2Cu_3 O_（7-x）薄膜- PtIr点接触结上观察到了相同的效应。在扩散模型中讨论了这些现象，描述了在外加电场下YBa 2Cu 3 O 7-x薄膜中结界面纳米尺度附近的氧空位漂移。
The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could o…
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at t…
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space wit…
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$…
We present a method to probe real-time dynamics in quantum mesoscopic systems using Ramsey interferometry. This allows us to explore the effect of interactions on quasi-particles in the time domain. We investigate the dephasing effects of an ohmic environment on an electron-hole pair in a tunnel junction. We show that dynamical Coulomb blockade phenomena can be observed for resistances much smaller than the quantum of resistance. Moreover, the crossover between high and low impedance limits can be probed for a constant resistance by a proper control of the voltage modulation.
Electronic-vibrational coupling in single-molecule junctions may result in current-induced bond rupture and is thus an important mechanism for the stability of molecular junctions. We use the hierarchical quantum master equation (HQME) method in combination with the quasi-classical Ehrenfest approach for the nuclear degrees of freedom to simulate current-induced bond rupture in single-molecule junctions. Employing generic models for molecular junctions with dissociative nuclear potentials, we analyze the underlying mechanisms. In particular, we investigate the dependence of the dissociation pr…
We investigate the formation and evolution of Au-CO single-molecule break junctions. The conductance histogram exhibits two distinct molecular configurations, which are further investigated by a combined statistical analysis. According to conditional histogram and correlation analysis these molecular configurations show strong anticorrelations with each other and with pure Au monoatomic junctions and atomic chains. We identify molecular precursor configurations with somewhat higher conductance which are formed prior to single-molecule junctions. According to detailed length analysis two distin…
A novel way to arrive at a single molecule junction in the partially wet phase is described. The fabrication of this device makes use of a natural drying process. Details are provided concerning the fabrication of the device and the related material choices. In addition a process description is provided with a step by step approach for creating the partially wet phase molecular MCB junction.
Embedded in an ohmic environment, the Josephson current peak can transfer part of its weight to finite voltage and the junction becomes resistive. The dissipative environment can even suppress the superconducting effect of the junction via a quantum phase transition occuring when the ohmic resistance $R_s$ exceeds the quantum resistance $R_{q}=h/(2e)^2$. For a topological junction hosting Majorana bound states with a $4 π$ periodicity of the superconducting phase, the phase transition is shifted to $4 R_{q}$. We consider a Josephson junction mixing the $2 π$ and $4 π$ periodicities shunted by …
Experimental correlation analysis and first-principles theory are used to probe the structure and evolution of Ag-CO-Ag single-molecule junctions, both before the formation, and after the rupture of the junctions. Two dimensional correlation histograms and conditional histograms demonstrate that prior to the single-molecule bridge configuration the CO molecule is already bound parallel to the Ag single-atom contact. This molecular precursor configuration is accompanied by the opening of additional conductance channels compared to the single-channel transport in pure Ag monoatomic junctions. To…
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using extern…
Recently, a contact-resistance-measurement method was developed to detect the minigap, hence the Andreev bound states (ABSs), in Josephson junctions constructed on the surface of three-dimensional topological insulators (3D TIs). In this work, we further generalize that method to the circumstance with radio frequency (rf) irradiation. We find that with the increase of rf power, the measured minigap becomes broadened and extends to higher energies, in a way similar to the rf power dependence of the outer border of the Shapiro step region. We show that the corresponding data of contact resistanc…
Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions
低欧姆隧道结（即具有与量子电阻$R_{\rm q}\equiv h/e^2\approx 25.8$ k $Ω$相当或小于量子电阻的结）的一维（1D）阵列的性质已经在实验上和理论上进行了研究。我们的实验数据表明，-在协议与以前的结果单，双结系统-库仑阻塞效应生存，即使在强隧穿制度，仍然清晰可见的结电阻低至1 k $Ω$。我们发展了一个强隧穿区结阵列中电子输运的准经典理论。该理论的预测和实验数据之间的良好协议已被观察到。我们还表明，由于加热效应和相对较大的校正之间的线性关系的半宽度的电导下降周围的零偏置电压，$V_{1/2}$，和测量的电子温度，这样的阵列是劣于那些传统上使用的库仑阻塞测温法（CBT）。尽管如此，对半宽度的期望校正$ΔV_{1/2}$可以相当容易地确定，并且它与零偏置电压$ΔG$周围的电导下降的幅度成比例。比例常数是结电阻和量子电阻之比$R/R_{\rm q}$的函数，它是一种纯粹的强隧穿效应。
我们研究了含有PN结的单层石墨烯霍尔条结构在弹道机制下的霍尔和弯曲电阻的磁场依赖性。当两个区域都是n型时，霍尔电阻占主导地位，并形成霍尔型平台。这些平台的出现是由于斯涅耳定律对角度的限制，只允许具有一定初始角度的电子通过电势阶跃。平台的大小及其位置由电势界面的位置以及所施加电势的值确定。当第二区域是p型时，弯曲电阻占主导地位，由于蛇态的存在，弯曲电阻在场中是不对称的。改变霍尔条中pn界面的位置会强烈影响这些状态，因此弯曲电阻也会改变。改变施加的电势，我们观察到弯曲电阻在电荷中性点（CNP）附近表现出与pn界面的位置无关的峰值，而霍尔电阻在CNP交叉时表现出符号反转，这与最近的实验非常一致[J. R. Williams等人，物理修订版信函107，046602（2011）]。
