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arXiv 1302.6175cond-mat.supr-concond-mat.mes-hall
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铝基约瑟夫森结的低频电阻和临界电流涨落

Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

C. D. Nugroho, V. Orlyanchik, D. J. Van Harlingen

摘要:

我们提出了低温测量的低频$1/f$噪声所产生的两个层次的波动在Al/AlO $_{x}$ /Al约瑟夫森结的氧化物势垒的合奏。分数噪声功率谱的临界电流和正常状态下的电阻具有类似的幅度和规模与温度呈线性关系,这意味着两者之间的等效性。编译我们的结果和发表的数据,我们推导出的面积和温度缩放的噪声为AlO $_{x}$势垒结。我们发现结势垒中的二能级涨落密度与玻璃态系统中的典型值相似。我们讨论了其含义以及与最近量子位实验的一致性。

英文摘要:

We present low-temperature measurements of the low-frequency $1/f$ noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlO$_{x}$/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance have similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlO$_{x}$ barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.

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