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arXiv 1008.3754cond-mat.str-el
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Anderson-Mott相变附近的电子输运理论

Theory of Electron Transport near Anderson-Mott Transitions

Hiroshi Shinaoka, Masatoshi Imada

摘要:

本文提出了在共存电子关联和随机性影响下,在Anderson-Mott跃迁附近的绝缘体中直流电子输运的理论。在足够低的温度下,Anderson-莫特绝缘体中的直流电子输运由费米能级附近的单粒子态密度决定。安德森绝缘体,由随机性引起,其特征在于在费米能量处的非零DOS。然而,最近,作者提出,在绝缘体中共存的随机性和短程相互作用打开了一个软的哈伯德间隙的DOS,和DOS消失,只有在费米能量。基于软Hubbard带隙的图象,我们导出了直流电阻率随温度变化的临界行为公式。将本理论与静电载流子掺杂到有机导体kappa-(BEDT-TTF)_2Cu[N(CN)_2]Br中的实验结果进行比较,证明了当前软哈伯德标度的证据。

英文摘要:

We present a theory of the DC electron transport in insulators near Anderson-Mott transitions under the influence of coexisting electron correlation and randomness. At sufficiently low temperatures, the DC electron transport in Anderson-Mott insulators is determined by the single-particle density of states (DOS) near the Fermi energy. Anderson insulators, caused by randomness, are characterized by a nonzero DOS at the Fermi energy. However, recently, the authors proposed that coexisting randomness and short-ranged interaction in insulators open a soft Hubbard gap in the DOS, and the DOS vanishes only at the Fermi energy. Based on the picture of the soft Hubbard gap, we derive a formula for the critical behavior for the temperature dependence of the DC resistivity. Comparisons of the present theory with experimental results of electrostatic carrier doping into an organic conductor kappa-(BEDT-TTF)_2Cu[N(CN)_2]Br demonstrate the evidence for the present soft-Hubbard scaling.

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