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arXiv 0811.4612cond-mat.str-el
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Mott-Anderson转变的临界行为:TMT-DMFT观点

Critical behavior at Mott-Anderson transition: a TMT-DMFT perspective

M. C. O. Aguiar, V. Dobrosavljevic, E. Abrahams, G. Kotliar

摘要:

我们提出了一个详细的分析的关键行为接近莫特-安德森转变。我们的研究结果是基于典型介质理论(TMT-DMFT)的框架内获得的数值和分析结果的组合-最简单的扩展动态平均场论(DMFT)能够将安德森局域化的影响。利用以前的标度研究安德森杂质模型接近金属-绝缘体转变,我们解决了这个问题的解析,并揭示了粒子-空穴对称性的临界行为的依赖。我们的主要结果是,足够强的无序,莫特-安德森过渡的特点是由一个精确定义的双流体行为,其中只有一小部分的电子进行“网站选择性”莫特本地化,其余的成为安德森本地化准粒子。

英文摘要:

We present a detailed analysis of the critical behavior close to the Mott-Anderson transition. Our findings are based on a combination of numerical and analytical results obtained within the framework of Typical-Medium Theory (TMT-DMFT) - the simplest extension of dynamical mean field theory (DMFT) capable of incorporating Anderson localization effects. By making use of previous scaling studies of Anderson impurity models close to the metal-insulator transition, we solve this problem analytically and reveal the dependence of the critical behavior on the particle-hole symmetry. Our main result is that, for sufficiently strong disorder, the Mott-Anderson transition is characterized by a precisely defined two-fluid behavior, in which only a fraction of the electrons undergo a "site selective" Mott localization; the rest become Anderson-localized quasiparticles.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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